JP6442177B2 - 発光素子 - Google Patents

発光素子 Download PDF

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Publication number
JP6442177B2
JP6442177B2 JP2014148938A JP2014148938A JP6442177B2 JP 6442177 B2 JP6442177 B2 JP 6442177B2 JP 2014148938 A JP2014148938 A JP 2014148938A JP 2014148938 A JP2014148938 A JP 2014148938A JP 6442177 B2 JP6442177 B2 JP 6442177B2
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JP
Japan
Prior art keywords
light emitting
electrode
semiconductor layer
disposed
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014148938A
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English (en)
Japanese (ja)
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JP2015023293A5 (enExample
JP2015023293A (ja
Inventor
オ・ソヨン
チョイ・ビョンヨン
イ・ジファン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
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LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of JP2015023293A publication Critical patent/JP2015023293A/ja
Publication of JP2015023293A5 publication Critical patent/JP2015023293A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

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  • Led Devices (AREA)
JP2014148938A 2013-07-22 2014-07-22 発光素子 Active JP6442177B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20130085959 2013-07-22
KR10-2013-0085959 2013-07-22
KR1020140083640A KR102194805B1 (ko) 2013-07-22 2014-07-04 발광소자
KR10-2014-0083640 2014-07-04

Publications (3)

Publication Number Publication Date
JP2015023293A JP2015023293A (ja) 2015-02-02
JP2015023293A5 JP2015023293A5 (enExample) 2017-08-03
JP6442177B2 true JP6442177B2 (ja) 2018-12-19

Family

ID=52482716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014148938A Active JP6442177B2 (ja) 2013-07-22 2014-07-22 発光素子

Country Status (2)

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JP (1) JP6442177B2 (enExample)
KR (1) KR102194805B1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102343087B1 (ko) * 2017-04-28 2021-12-24 엘지이노텍 주식회사 반도체 소자 패키지
KR102619665B1 (ko) * 2018-06-29 2023-12-29 삼성전자주식회사 발광 장치
CN110957404A (zh) * 2019-12-17 2020-04-03 佛山市国星半导体技术有限公司 一种高压led芯片及其制作方法
CN113302754A (zh) * 2020-03-03 2021-08-24 东莞市中麒光电技术有限公司 发光二极管及其制备方法
US12199210B2 (en) 2021-10-18 2025-01-14 Hamamatsu Photonics K.K. Optical semiconductor element

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2750194A1 (en) * 2005-06-22 2014-07-02 Seoul Viosys Co., Ltd. Light emitting device comprising a plurality of light emitting diode cells
KR100966372B1 (ko) * 2007-11-23 2010-06-28 삼성엘이디 주식회사 모놀리식 발광다이오드 어레이 및 그 제조방법
JP2010526425A (ja) * 2008-05-20 2010-07-29 パナソニック株式会社 半導体発光装置、並びに、これを用いた光源装置及び照明システム
TW201011890A (en) * 2008-09-04 2010-03-16 Formosa Epitaxy Inc Alternating current light emitting device
KR101601624B1 (ko) * 2010-02-19 2016-03-09 삼성전자주식회사 멀티셀 어레이를 갖는 반도체 발광장치, 발광모듈 및 조명장치
KR101014155B1 (ko) * 2010-03-10 2011-02-10 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101650518B1 (ko) * 2010-09-13 2016-08-23 에피스타 코포레이션 발광 구조체
KR20130035658A (ko) * 2011-09-30 2013-04-09 서울옵토디바이스주식회사 발광 다이오드 소자용 기판 제조 방법
JP6176032B2 (ja) * 2013-01-30 2017-08-09 日亜化学工業株式会社 半導体発光素子

Also Published As

Publication number Publication date
KR102194805B1 (ko) 2020-12-28
KR20150011310A (ko) 2015-01-30
JP2015023293A (ja) 2015-02-02

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