KR102194805B1 - 발광소자 - Google Patents

발광소자 Download PDF

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Publication number
KR102194805B1
KR102194805B1 KR1020140083640A KR20140083640A KR102194805B1 KR 102194805 B1 KR102194805 B1 KR 102194805B1 KR 1020140083640 A KR1020140083640 A KR 1020140083640A KR 20140083640 A KR20140083640 A KR 20140083640A KR 102194805 B1 KR102194805 B1 KR 102194805B1
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KR
South Korea
Prior art keywords
light emitting
electrode
semiconductor layer
type semiconductor
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020140083640A
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English (en)
Korean (ko)
Other versions
KR20150011310A (ko
Inventor
오소영
최병연
이지환
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to US14/336,574 priority Critical patent/US9673254B2/en
Priority to EP14177818.3A priority patent/EP2830094B1/en
Priority to CN201410351833.2A priority patent/CN104332482A/zh
Priority to JP2014148938A priority patent/JP6442177B2/ja
Publication of KR20150011310A publication Critical patent/KR20150011310A/ko
Application granted granted Critical
Publication of KR102194805B1 publication Critical patent/KR102194805B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

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  • Led Devices (AREA)
KR1020140083640A 2013-07-22 2014-07-04 발광소자 Active KR102194805B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US14/336,574 US9673254B2 (en) 2013-07-22 2014-07-21 Light emitting device
EP14177818.3A EP2830094B1 (en) 2013-07-22 2014-07-21 Light emitting device
CN201410351833.2A CN104332482A (zh) 2013-07-22 2014-07-22 发光器件
JP2014148938A JP6442177B2 (ja) 2013-07-22 2014-07-22 発光素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20130085959 2013-07-22
KR1020130085959 2013-07-22

Publications (2)

Publication Number Publication Date
KR20150011310A KR20150011310A (ko) 2015-01-30
KR102194805B1 true KR102194805B1 (ko) 2020-12-28

Family

ID=52482716

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140083640A Active KR102194805B1 (ko) 2013-07-22 2014-07-04 발광소자

Country Status (2)

Country Link
JP (1) JP6442177B2 (enExample)
KR (1) KR102194805B1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102343087B1 (ko) * 2017-04-28 2021-12-24 엘지이노텍 주식회사 반도체 소자 패키지
KR102619665B1 (ko) * 2018-06-29 2023-12-29 삼성전자주식회사 발광 장치
CN110957404A (zh) * 2019-12-17 2020-04-03 佛山市国星半导体技术有限公司 一种高压led芯片及其制作方法
WO2021174412A1 (zh) * 2020-03-03 2021-09-10 东莞市中麒光电技术有限公司 发光二极管及其制备方法
US12199210B2 (en) 2021-10-18 2025-01-14 Hamamatsu Photonics K.K. Optical semiconductor element

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100006870A1 (en) * 2005-06-22 2010-01-14 Seoul Opto Device Co., Ltd Light emitting device
KR101014155B1 (ko) * 2010-03-10 2011-02-10 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
JP2011171739A (ja) * 2010-02-19 2011-09-01 Samsung Led Co Ltd マルチセルアレイを有する半導体発光装置、発光モジュール及び照明装置
US20120061694A1 (en) * 2010-09-13 2012-03-15 Epistar Corporation Light-emitting structure

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100966372B1 (ko) * 2007-11-23 2010-06-28 삼성엘이디 주식회사 모놀리식 발광다이오드 어레이 및 그 제조방법
WO2009141960A1 (en) * 2008-05-20 2009-11-26 Panasonic Corporation Semiconductor light-emitting device as well as light source device and lighting system including the same
TW201011890A (en) * 2008-09-04 2010-03-16 Formosa Epitaxy Inc Alternating current light emitting device
KR20130035658A (ko) * 2011-09-30 2013-04-09 서울옵토디바이스주식회사 발광 다이오드 소자용 기판 제조 방법
JP6176032B2 (ja) * 2013-01-30 2017-08-09 日亜化学工業株式会社 半導体発光素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100006870A1 (en) * 2005-06-22 2010-01-14 Seoul Opto Device Co., Ltd Light emitting device
JP2011171739A (ja) * 2010-02-19 2011-09-01 Samsung Led Co Ltd マルチセルアレイを有する半導体発光装置、発光モジュール及び照明装置
KR101014155B1 (ko) * 2010-03-10 2011-02-10 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
US20120061694A1 (en) * 2010-09-13 2012-03-15 Epistar Corporation Light-emitting structure

Also Published As

Publication number Publication date
KR20150011310A (ko) 2015-01-30
JP2015023293A (ja) 2015-02-02
JP6442177B2 (ja) 2018-12-19

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