JP6435629B2 - 基板のドライエッチング方法 - Google Patents
基板のドライエッチング方法 Download PDFInfo
- Publication number
- JP6435629B2 JP6435629B2 JP2014087149A JP2014087149A JP6435629B2 JP 6435629 B2 JP6435629 B2 JP 6435629B2 JP 2014087149 A JP2014087149 A JP 2014087149A JP 2014087149 A JP2014087149 A JP 2014087149A JP 6435629 B2 JP6435629 B2 JP 6435629B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- resist
- plating layer
- dry etching
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 140
- 238000000034 method Methods 0.000 title claims description 68
- 238000001312 dry etching Methods 0.000 title claims description 51
- 238000007747 plating Methods 0.000 claims description 96
- 238000005530 etching Methods 0.000 claims description 35
- 238000010438 heat treatment Methods 0.000 claims description 7
- 230000007261 regionalization Effects 0.000 claims description 2
- 239000013078 crystal Substances 0.000 description 49
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 25
- 229910052759 nickel Inorganic materials 0.000 description 11
- 239000010453 quartz Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000010931 gold Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Landscapes
- Drying Of Semiconductors (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014087149A JP6435629B2 (ja) | 2014-04-21 | 2014-04-21 | 基板のドライエッチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014087149A JP6435629B2 (ja) | 2014-04-21 | 2014-04-21 | 基板のドライエッチング方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015207895A JP2015207895A (ja) | 2015-11-19 |
| JP2015207895A5 JP2015207895A5 (enrdf_load_stackoverflow) | 2017-04-27 |
| JP6435629B2 true JP6435629B2 (ja) | 2018-12-12 |
Family
ID=54604401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014087149A Active JP6435629B2 (ja) | 2014-04-21 | 2014-04-21 | 基板のドライエッチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6435629B2 (enrdf_load_stackoverflow) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05243217A (ja) * | 1992-02-28 | 1993-09-21 | Nec Corp | 半導体装置の製造方法 |
| JP3421259B2 (ja) * | 1997-12-25 | 2003-06-30 | ティーディーケイ株式会社 | エッチングマスク、その作製方法およびエッチング方法、並びに磁気ヘッドおよびその製造方法 |
| JP4516538B2 (ja) * | 2006-03-01 | 2010-08-04 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
| JP5386962B2 (ja) * | 2008-12-12 | 2014-01-15 | 三菱電機株式会社 | エッチング方法およびエッチング方法を用いた半導体装置の製造方法 |
-
2014
- 2014-04-21 JP JP2014087149A patent/JP6435629B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015207895A (ja) | 2015-11-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8093787B2 (en) | Tuning-fork-type piezoelectric vibrating piece with root portions having tapered surfaces in the thickness direction | |
| JP5059399B2 (ja) | 圧電振動片の製造方法、圧電振動片および圧電デバイス | |
| JP5465573B2 (ja) | 音叉型水晶片の製造方法 | |
| US7544464B2 (en) | Manufacturing method of tuning-fork type quartz crystal resonator | |
| JP5468444B2 (ja) | 音叉型水晶片の製造方法 | |
| JP3952811B2 (ja) | 圧電振動片、圧電振動片の製造方法および圧電デバイス | |
| JP2008113380A (ja) | 水晶振動子の製造方法、水晶振動子及び電子部品 | |
| JP6435629B2 (ja) | 基板のドライエッチング方法 | |
| JP5465572B2 (ja) | 音叉型水晶片の製造方法 | |
| JP5890271B2 (ja) | 音叉型屈曲水晶振動素子及びその製造方法 | |
| JPH07212161A (ja) | 水晶振動子の製造方法 | |
| JP4060699B2 (ja) | 水晶振動子の製造方法 | |
| JP4305728B2 (ja) | 振動片の製造方法 | |
| JP6055294B2 (ja) | 圧電素子の製造方法 | |
| JP5769557B2 (ja) | 水晶振動子片の製造方法 | |
| JP4729924B2 (ja) | Ａｔカット水晶片集合体の製造方法 | |
| JP6240531B2 (ja) | 圧電振動子の製造方法 | |
| JP2007142795A (ja) | 圧電振動片の製造方法およびアライメントマーカーの形成方法 | |
| JP2010183208A (ja) | ウエットエッチング方法及び音叉型圧電素子片の加工方法 | |
| JP5758642B2 (ja) | 水晶振動子の製造方法 | |
| JP6163404B2 (ja) | 圧電素子の製造方法 | |
| JP6424076B2 (ja) | 圧電振動子の製造方法 | |
| JP5045829B2 (ja) | 水晶片集合体及び水晶振動子 | |
| JP2007096756A (ja) | 基板の製造方法、水晶振動片及びジャイロ振動片 | |
| JPH0864931A (ja) | 電子部品の微細電極形成方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20160617 |
|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20160624 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170323 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170323 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180228 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180320 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180517 |
|
| RD05 | Notification of revocation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7425 Effective date: 20180904 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20181016 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181029 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6435629 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |