JP6434744B2 - 半導体バイオセンサー - Google Patents
半導体バイオセンサー Download PDFInfo
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- JP6434744B2 JP6434744B2 JP2014169886A JP2014169886A JP6434744B2 JP 6434744 B2 JP6434744 B2 JP 6434744B2 JP 2014169886 A JP2014169886 A JP 2014169886A JP 2014169886 A JP2014169886 A JP 2014169886A JP 6434744 B2 JP6434744 B2 JP 6434744B2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/28—Electrolytic cell components
- G01N27/30—Electrodes, e.g. test electrodes; Half-cells
- G01N27/327—Biochemical electrodes, e.g. electrical or mechanical details for in vitro measurements
- G01N27/3271—Amperometric enzyme electrodes for analytes in body fluids, e.g. glucose in blood
- G01N27/3272—Test elements therefor, i.e. disposable laminated substrates with electrodes, reagent and channels
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
- G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
- G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
- G01N33/543—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals
- G01N33/54366—Apparatus specially adapted for solid-phase testing
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Description
本発明に関わる半導体バイオセンサーは、高精度小型検査装置の中心部品となる半導体チップであって、半導体チップ内に製造され、複数の導電路と、前記複数の導電路が共有する共通ソース領域と、前記複数の導電路に個別に接続する複数の不揮発性メモリ型トランジスタと、前記複数の不揮発性メモリ型トランジスタに個々に接続する複数のセンスアンプと、前記複数のセンスアンプの出力を解析し前記複数のセンスアンプの動作を管理するビット線デコーダと、前記複数の導電路を包み込む酸化膜と、前記酸化膜表面に付着する複数のレセプターと、を備えていることを特徴とする。
本実施形態に関わる半導体バイオセンサーは、図8に示すように、導電路6と酸化膜1とレセプター8からなる反応中心装置200および下記に説明する周辺装置によって実現することができる。
ε:=1−m/M 式3
改善LOD=(1−ε)×LOD 式4
2 ソース
3 ドレイン
4 半導体基板
5 ターゲットとレセプターが合体して半導体表面に付着した電荷
6 導電路
7 ターゲット
8 レセプター
9 センスアンプ
10 シリコン・オン・インシュレータ(SOI)
11 半導体ライン
12 スペース
20 ソース選択ゲートトランジスタ
21 ドレイン選択ゲートトランジスタ
22 ビット線デコーダ
23 共通ソース線
30 導電路の断線
31 不揮発性メモリ型トランジスタ
32 細過ぎて抵抗が高い導電路
60 直径にばらつきのある導電路
101 レジスト
110 半導体バイオセンサーの従来例
200 反応中心装置
300 乖離定数
400 初期化ステップ
410 間引きステップ
420 検体測定ステップ
530 オフセット調整ステップ
Claims (6)
- 高精度小型検査装置の中心部品となる半導体チップ内に製造され、複数の導電路と、前記複数の導電路の一端に連接される共通ソース領域と、前記複数の導電路の他端に個別に接続する複数の不揮発性メモリ型トランジスタと、前記複数の不揮発性メモリ型トランジスタに個々に接続する複数のセンスアンプと、前記複数のセンスアンプの出力を解析して前記複数のセンスアンプの動作を管理するビット線デコーダと、前記複数の導電路を包み込む酸化膜と、前記酸化膜表面に付着する複数のレセプターと、を備えていることを特徴とする半導体バイオセンサー。
- 請求項1記載の半導体バイオセンサーを、検体サンプルを含む溶液に晒す前に前記複数のセンスアンプを利用して前記複数の導電路からの出力信号を検査し、断裂や異常高抵抗などの導電不全の有無を判断する初期化ステップと、前記初期化ステップの判断に基づき、断裂や異常高抵抗の導電路に接続する不揮発性メモリ型トランジスタに対して書き込み処理を行う間引きステップと、を備えていることを特徴とする、半導体バイオセンサーの動作方法。
- 前記間引きステップの後、さらに、前記複数の不揮発性メモリ型トランジスタのうち、前記間引きステップで書き込みが行われなかった不揮発性メモリ型トランジスタの閾電圧を選択的に微調整するオフセット調整ステップを、さらに備えていることを特徴とする、請求項2記載の半導体バイオセンサーの動作方法。
- 高精度小型検査装置の中心部品となる半導体チップ内に製造され、複数の導電路と、前記複数の導電路の一端に連接される共通ソース領域と、前記複数の導電路の他端に個々に接続する複数のドレイン選択ゲートトランジスタと、前記複数のドレイン選択ゲートトランジスタに個々に接続する複数の不揮発性メモリ型トランジスタと、前記複数の不揮発性メモリ型トランジスタに個々に接続する複数のセンスアンプと、前記複数のセンスアンプの出力を解析して前記複数のセンスアンプの動作を管理するビット線デコーダと、前記複数の導電路を包み込む酸化膜と、前記酸化膜表面に付着する複数のレセプターと、を備えていることを特徴とする半導体バイオセンサー。
- 請求項4記載の半導体バイオセンサーを、検体サンプルを含む溶液に晒す前に前記複数のセンスアンプを利用して前記複数の導電路からの出力信号を検査し、断裂や異常高抵抗などの導電不全の有無を判断する初期化ステップと、前記初期化ステップの判断に基づき、断裂や異常高抵抗などの導電路に接続する不揮発性メモリ型トランジスタに対して書き込み処理を行う間引きステップと、を備えていることを特徴とする、半導体バイオセンサーの動作方法。
- 前記間引きステップの後、さらに、前記複数の不揮発性メモリ型トランジスタのうち、前記間引きステップで書き込みが行われなかった不揮発性メモリ型トランジスタの閾電圧を選択的に微調整するオフセット調整ステップを、さらに備えていることを特徴とする、請求項5記載の半導体バイオセンサーの動作方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014169886A JP6434744B2 (ja) | 2014-08-07 | 2014-08-07 | 半導体バイオセンサー |
US14/792,661 US20160041119A1 (en) | 2014-08-07 | 2015-07-07 | Semiconductor biosensor and control method thereof |
CN201510415782.XA CN105372302B (zh) | 2014-08-07 | 2015-07-15 | 半导体生化感测器及其控制方法 |
EP15177452.8A EP2982981B8 (en) | 2014-08-07 | 2015-07-20 | Semiconductor biosensor and control method thereof |
US16/257,445 US10908120B2 (en) | 2014-08-07 | 2019-01-25 | Semiconductor biosensor and control method thereof |
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JP2014169886A JP6434744B2 (ja) | 2014-08-07 | 2014-08-07 | 半導体バイオセンサー |
Publications (3)
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JP2016038367A JP2016038367A (ja) | 2016-03-22 |
JP2016038367A5 JP2016038367A5 (ja) | 2016-05-19 |
JP6434744B2 true JP6434744B2 (ja) | 2018-12-05 |
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JP2014169886A Active JP6434744B2 (ja) | 2014-08-07 | 2014-08-07 | 半導体バイオセンサー |
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US (1) | US20160041119A1 (ja) |
EP (1) | EP2982981B8 (ja) |
JP (1) | JP6434744B2 (ja) |
CN (1) | CN105372302B (ja) |
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US10177923B2 (en) * | 2016-07-15 | 2019-01-08 | Hiroshi Watanabe | Electronic appliance and network of the same |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
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US4743954A (en) * | 1985-06-07 | 1988-05-10 | University Of Utah | Integrated circuit for a chemical-selective sensor with voltage output |
AU2001259128A1 (en) * | 2000-04-24 | 2001-11-07 | Eagle Research And Development, Llc | An ultra-fast nucleic acid sequencing device and a method for making and using the same |
CN1294260C (zh) * | 2001-12-19 | 2007-01-10 | 株式会社日立高新技术 | 电位滴定dna微阵列、其制造方法及核酸解析方法 |
US20040110277A1 (en) * | 2002-04-12 | 2004-06-10 | Seiko Epson Corporation | Sensor cell, bio-sensor, capacitance element manufacturing method, biological reaction detection method and genetic analytical method |
JP2003322633A (ja) * | 2002-05-01 | 2003-11-14 | Seiko Epson Corp | センサセル、バイオセンサ及びこれらの製造方法 |
JP4774476B2 (ja) * | 2004-02-16 | 2011-09-14 | 独立行政法人科学技術振興機構 | センサー |
JP4438049B2 (ja) * | 2003-08-11 | 2010-03-24 | キヤノン株式会社 | 電界効果トランジスタ及びそれを用いたセンサ並びにその製造方法 |
US7335526B2 (en) * | 2005-10-31 | 2008-02-26 | Hewlett-Packard Development Company, L.P. | Sensing system |
WO2008063901A1 (en) * | 2006-11-17 | 2008-05-29 | Trustees Of Boston University | Nanochannel-based sensor system for use in detecting chemical or biological species |
US20080173864A1 (en) * | 2007-01-20 | 2008-07-24 | Toshiba America Research, Inc. | Carbon nanotube transistor having low fringe capacitance and low channel resistance |
WO2009041914A1 (en) * | 2007-09-26 | 2009-04-02 | Agency For Science, Technology And Research | A biosensor and a method for determining the ohmic resistance of a sensing circuit of a biosensor |
WO2010125717A1 (ja) * | 2009-04-27 | 2010-11-04 | シャープ株式会社 | 化学センサ |
CN102103112B (zh) * | 2009-12-16 | 2013-05-01 | 中国科学院电子学研究所 | 一种识别残留农药的光寻址分子印迹阵列传感器 |
US8052931B2 (en) * | 2010-01-04 | 2011-11-08 | International Business Machines Corporation | Ultra low-power CMOS based bio-sensor circuit |
US9970984B2 (en) * | 2011-12-01 | 2018-05-15 | Life Technologies Corporation | Method and apparatus for identifying defects in a chemical sensor array |
US8697565B2 (en) * | 2012-03-30 | 2014-04-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Shallow via formation by oxidation |
CN103472114B (zh) * | 2012-06-07 | 2015-05-06 | 中国科学院电子学研究所 | 带补偿功能的多通道isfet传感器读出电路 |
US10030266B2 (en) * | 2013-06-27 | 2018-07-24 | Hitachi, Ltd. | Semiconductor device and manufacturing method thereof |
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2014
- 2014-08-07 JP JP2014169886A patent/JP6434744B2/ja active Active
-
2015
- 2015-07-07 US US14/792,661 patent/US20160041119A1/en not_active Abandoned
- 2015-07-15 CN CN201510415782.XA patent/CN105372302B/zh active Active
- 2015-07-20 EP EP15177452.8A patent/EP2982981B8/en active Active
Also Published As
Publication number | Publication date |
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EP2982981B1 (en) | 2016-12-28 |
CN105372302A (zh) | 2016-03-02 |
CN105372302B (zh) | 2018-06-19 |
JP2016038367A (ja) | 2016-03-22 |
EP2982981B8 (en) | 2017-03-08 |
US20160041119A1 (en) | 2016-02-11 |
EP2982981A1 (en) | 2016-02-10 |
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