JP6423135B2 - パターン付き基板の分割方法 - Google Patents

パターン付き基板の分割方法 Download PDF

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Publication number
JP6423135B2
JP6423135B2 JP2012261040A JP2012261040A JP6423135B2 JP 6423135 B2 JP6423135 B2 JP 6423135B2 JP 2012261040 A JP2012261040 A JP 2012261040A JP 2012261040 A JP2012261040 A JP 2012261040A JP 6423135 B2 JP6423135 B2 JP 6423135B2
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JP
Japan
Prior art keywords
substrate
processing
patterned substrate
tool
metal film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012261040A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014107485A (ja
Inventor
佑磨 岩坪
佑磨 岩坪
郁祥 中谷
郁祥 中谷
正平 長友
正平 長友
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsuboshi Diamond Industrial Co Ltd
Original Assignee
Mitsuboshi Diamond Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsuboshi Diamond Industrial Co Ltd filed Critical Mitsuboshi Diamond Industrial Co Ltd
Priority to JP2012261040A priority Critical patent/JP6423135B2/ja
Priority to TW102123443A priority patent/TWI591702B/zh
Priority to KR1020130087379A priority patent/KR20140070336A/ko
Priority to CN201910130284.9A priority patent/CN109940294A/zh
Priority to CN201310433562.0A priority patent/CN103846560A/zh
Publication of JP2014107485A publication Critical patent/JP2014107485A/ja
Priority to KR1020180087405A priority patent/KR101979397B1/ko
Application granted granted Critical
Publication of JP6423135B2 publication Critical patent/JP6423135B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4885—Wire-like parts or pins
    • H01L21/4896—Mechanical treatment, e.g. cutting, bending
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
JP2012261040A 2012-11-29 2012-11-29 パターン付き基板の分割方法 Expired - Fee Related JP6423135B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2012261040A JP6423135B2 (ja) 2012-11-29 2012-11-29 パターン付き基板の分割方法
TW102123443A TWI591702B (zh) 2012-11-29 2013-07-01 A method of dividing a patterned substrate
KR1020130087379A KR20140070336A (ko) 2012-11-29 2013-07-24 패턴이 있는 기판의 분할 방법
CN201910130284.9A CN109940294A (zh) 2012-11-29 2013-09-16 具有图案的基板的分割方法
CN201310433562.0A CN103846560A (zh) 2012-11-29 2013-09-16 具有图案的基板的分割方法
KR1020180087405A KR101979397B1 (ko) 2012-11-29 2018-07-26 패턴이 있는 기판의 분할 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012261040A JP6423135B2 (ja) 2012-11-29 2012-11-29 パターン付き基板の分割方法

Publications (2)

Publication Number Publication Date
JP2014107485A JP2014107485A (ja) 2014-06-09
JP6423135B2 true JP6423135B2 (ja) 2018-11-14

Family

ID=50854938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012261040A Expired - Fee Related JP6423135B2 (ja) 2012-11-29 2012-11-29 パターン付き基板の分割方法

Country Status (4)

Country Link
JP (1) JP6423135B2 (ko)
KR (2) KR20140070336A (ko)
CN (2) CN109940294A (ko)
TW (1) TWI591702B (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6422355B2 (ja) * 2015-01-29 2018-11-14 株式会社ディスコ アライメント方法
JP6520964B2 (ja) * 2017-01-26 2019-05-29 日亜化学工業株式会社 発光素子の製造方法
CN106914707B (zh) * 2017-03-15 2020-05-22 京东方科技集团股份有限公司 切割柔性显示基板母板的方法、柔性显示器件、显示装置及激光切割机
CN108289375A (zh) * 2018-01-15 2018-07-17 深圳华麟电路技术有限公司 高像素摄像头模组软硬结合板加工方法
JP7037425B2 (ja) * 2018-04-23 2022-03-16 株式会社ディスコ レーザー光線の焦点位置検出方法
JP7262210B2 (ja) * 2018-11-21 2023-04-21 東京エレクトロン株式会社 凹部の埋め込み方法
JP2024072003A (ja) * 2022-11-15 2024-05-27 株式会社デンソー 半導体装置の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0548132A (ja) * 1991-08-08 1993-02-26 Yoshida Kogyo Kk <Ykk> 非晶質半導体太陽電池の製造方法
JPH09205245A (ja) * 1996-01-24 1997-08-05 Nippon Telegr & Teleph Corp <Ntt> 面発光レーザ
JPH1027971A (ja) * 1996-07-10 1998-01-27 Nec Corp 有機薄膜多層配線基板の切断方法
CN1241253C (zh) * 2002-06-24 2006-02-08 丰田合成株式会社 半导体元件的制造方法
WO2010090111A1 (ja) * 2009-02-09 2010-08-12 浜松ホトニクス株式会社 加工対象物切断方法
TWI501415B (zh) * 2009-02-24 2015-09-21 Mitsuboshi Diamond Ind Co Ltd A trench processing tool, a trench processing method and a cutting device using a thin film solar cell
US9035216B2 (en) * 2009-04-07 2015-05-19 Hamamatsu Photonics K.K. Method and device for controlling interior fractures by controlling the laser pulse width
JP5056839B2 (ja) 2009-12-25 2012-10-24 三星ダイヤモンド工業株式会社 被加工物の加工方法および被加工物の分割方法
JP2011142235A (ja) * 2010-01-08 2011-07-21 Mitsuboshi Diamond Industrial Co Ltd 薄膜太陽電池用の溝加工ツール
JP5670647B2 (ja) * 2010-05-14 2015-02-18 浜松ホトニクス株式会社 加工対象物切断方法
JP5528904B2 (ja) * 2010-05-20 2014-06-25 株式会社ディスコ サファイアウェーハの分割方法
JP5687864B2 (ja) * 2010-08-10 2015-03-25 株式会社ディスコ サファイアウェーハの分割方法
TWI469842B (zh) * 2010-09-30 2015-01-21 Mitsuboshi Diamond Ind Co Ltd 雷射加工裝置、被加工物之加工方法及被加工物之分割方法
JP5548143B2 (ja) * 2011-01-25 2014-07-16 三星ダイヤモンド工業株式会社 Ｌｅｄチップの製造方法
JP2012238746A (ja) * 2011-05-12 2012-12-06 Disco Abrasive Syst Ltd 光デバイスウエーハの分割方法
CN102500933A (zh) * 2011-11-07 2012-06-20 苏州德龙激光有限公司 与led内切割加工相匹配的激光加工方法

Also Published As

Publication number Publication date
TW201421554A (zh) 2014-06-01
JP2014107485A (ja) 2014-06-09
CN109940294A (zh) 2019-06-28
KR20180089892A (ko) 2018-08-09
CN103846560A (zh) 2014-06-11
KR20140070336A (ko) 2014-06-10
TWI591702B (zh) 2017-07-11
KR101979397B1 (ko) 2019-05-16

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