JP6419842B2 - 高周波（ｒｆ）および直流（ｄｃ）エネルギーを１つまたは複数の共通電極に結合させるためのキャパシタアセンブリ - Google Patents

高周波（ｒｆ）および直流（ｄｃ）エネルギーを１つまたは複数の共通電極に結合させるためのキャパシタアセンブリ Download PDF

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Publication number
JP6419842B2
JP6419842B2 JP2016560966A JP2016560966A JP6419842B2 JP 6419842 B2 JP6419842 B2 JP 6419842B2 JP 2016560966 A JP2016560966 A JP 2016560966A JP 2016560966 A JP2016560966 A JP 2016560966A JP 6419842 B2 JP6419842 B2 JP 6419842B2
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Japan
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conductive plate
capacitor
capacitor assembly
power
coupled
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Expired - Fee Related
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JP2016560966A
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Japanese (ja)
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JP2017512910A (ja
JP2017512910A5 (enExample
Inventor
カール ジョンソン
カール ジョンソン
レス ウォジノウスキー
レス ウォジノウスキー
ローレンス エイ リンガー
ローレンス エイ リンガー
ジェフリー ルートヴィヒ
ジェフリー ルートヴィヒ
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/22—Electrostatic or magnetic shielding
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/28—Tubular capacitors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2016560966A 2014-04-09 2015-03-13 高周波（ｒｆ）および直流（ｄｃ）エネルギーを１つまたは複数の共通電極に結合させるためのキャパシタアセンブリ Expired - Fee Related JP6419842B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/249,327 2014-04-09
US14/249,327 US9355776B2 (en) 2014-04-09 2014-04-09 Capacitor assemblies for coupling radio frequency (RF) and direct current (DC) energy to one or more common electrodes
PCT/US2015/020501 WO2015156956A1 (en) 2014-04-09 2015-03-13 Capacitor assemblies for coupling radio frequency (rf) and direct current (dc) energy to one or more common electrodes

Publications (3)

Publication Number Publication Date
JP2017512910A JP2017512910A (ja) 2017-05-25
JP2017512910A5 JP2017512910A5 (enExample) 2018-04-19
JP6419842B2 true JP6419842B2 (ja) 2018-11-07

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ID=54265642

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Application Number Title Priority Date Filing Date
JP2016560966A Expired - Fee Related JP6419842B2 (ja) 2014-04-09 2015-03-13 高周波（ｒｆ）および直流（ｄｃ）エネルギーを１つまたは複数の共通電極に結合させるためのキャパシタアセンブリ

Country Status (6)

Country Link
US (1) US9355776B2 (enExample)
JP (1) JP6419842B2 (enExample)
KR (1) KR101812049B1 (enExample)
CN (2) CN106133910B (enExample)
TW (1) TWI594360B (enExample)
WO (1) WO2015156956A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018194807A1 (en) * 2017-04-21 2018-10-25 Applied Materials, Inc. Improved electrode assembly
CN112331607B (zh) * 2020-10-28 2024-03-26 北京北方华创微电子装备有限公司 静电卡盘及半导体工艺设备

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2651597B2 (ja) * 1988-06-27 1997-09-10 富士通株式会社 ドライエッチング方法及び装置
US5670066A (en) 1995-03-17 1997-09-23 Lam Research Corporation Vacuum plasma processing wherein workpiece position is detected prior to chuck being activated
US6280584B1 (en) * 1998-07-29 2001-08-28 Applied Materials, Inc. Compliant bond structure for joining ceramic to metal
JP4463363B2 (ja) * 1998-12-28 2010-05-19 東京エレクトロン株式会社 下部電極構造およびそれを用いたプラズマ処理装置
US6492612B1 (en) 1998-12-28 2002-12-10 Tokyo Electron Limited Plasma apparatus and lower electrode thereof
US6431112B1 (en) * 1999-06-15 2002-08-13 Tokyo Electron Limited Apparatus and method for plasma processing of a substrate utilizing an electrostatic chuck
JP3659180B2 (ja) * 2000-03-24 2005-06-15 株式会社日立製作所 半導体製造装置および処理方法、およびウエハ電位プローブ
JP3437961B2 (ja) * 2000-05-26 2003-08-18 東京エレクトロン株式会社 基板のプラズマ処理中に基板のバイアスを監視するための改善された装置および方法
JP3792999B2 (ja) 2000-06-28 2006-07-05 株式会社東芝 プラズマ処理装置
JP4878188B2 (ja) * 2006-03-20 2012-02-15 東京エレクトロン株式会社 基板処理装置、堆積物モニタ装置、及び堆積物モニタ方法
US20090236214A1 (en) * 2008-03-20 2009-09-24 Karthik Janakiraman Tunable ground planes in plasma chambers
JP5264238B2 (ja) * 2008-03-25 2013-08-14 東京エレクトロン株式会社 プラズマ処理装置
CN102160167B (zh) 2008-08-12 2013-12-04 应用材料公司 静电吸盘组件
US8313664B2 (en) 2008-11-21 2012-11-20 Applied Materials, Inc. Efficient and accurate method for real-time prediction of the self-bias voltage of a wafer and feedback control of ESC voltage in plasma processing chamber
TWI455172B (zh) * 2010-12-30 2014-10-01 Semes Co Ltd 基板處理設備、電漿阻抗匹配裝置及可變電容器
US20130107415A1 (en) * 2011-10-28 2013-05-02 Applied Materials, Inc. Electrostatic chuck
CN103594315B (zh) * 2012-08-14 2016-04-20 北京北方微电子基地设备工艺研究中心有限责任公司 一种等离子体加工设备

Also Published As

Publication number Publication date
KR101812049B1 (ko) 2018-01-30
WO2015156956A1 (en) 2015-10-15
JP2017512910A (ja) 2017-05-25
CN106133910B (zh) 2019-09-13
TWI594360B (zh) 2017-08-01
CN106133910A (zh) 2016-11-16
US20150294790A1 (en) 2015-10-15
CN109712809B (zh) 2021-04-27
US9355776B2 (en) 2016-05-31
CN109712809A (zh) 2019-05-03
KR20160143765A (ko) 2016-12-14
TW201539643A (zh) 2015-10-16

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