CN106133910B - 用于将射频(rf)与直流(dc)能量耦合至一或多个公共电极的电容组件 - Google Patents

用于将射频(rf)与直流(dc)能量耦合至一或多个公共电极的电容组件 Download PDF

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Publication number
CN106133910B
CN106133910B CN201580014300.8A CN201580014300A CN106133910B CN 106133910 B CN106133910 B CN 106133910B CN 201580014300 A CN201580014300 A CN 201580014300A CN 106133910 B CN106133910 B CN 106133910B
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CN
China
Prior art keywords
conductive plate
power
coupled
substrate support
capacitor
Prior art date
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Expired - Fee Related
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CN201580014300.8A
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English (en)
Chinese (zh)
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CN106133910A (zh
Inventor
卡尔·约翰逊
莱斯·沃伊洛夫斯基
劳伦斯·A·林戈尔
杰弗里·路德维希
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Applied Materials Inc
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Applied Materials Inc
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Priority to CN201811141779.3A priority Critical patent/CN109712809B/zh
Publication of CN106133910A publication Critical patent/CN106133910A/zh
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Publication of CN106133910B publication Critical patent/CN106133910B/zh
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/22—Electrostatic or magnetic shielding
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/28—Tubular capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201580014300.8A 2014-04-09 2015-03-13 用于将射频(rf)与直流(dc)能量耦合至一或多个公共电极的电容组件 Expired - Fee Related CN106133910B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811141779.3A CN109712809B (zh) 2014-04-09 2015-03-13 用于将射频(rf)与直流(dc)能量耦合至一或多个公共电极的电容组件

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/249,327 2014-04-09
US14/249,327 US9355776B2 (en) 2014-04-09 2014-04-09 Capacitor assemblies for coupling radio frequency (RF) and direct current (DC) energy to one or more common electrodes
PCT/US2015/020501 WO2015156956A1 (en) 2014-04-09 2015-03-13 Capacitor assemblies for coupling radio frequency (rf) and direct current (dc) energy to one or more common electrodes

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201811141779.3A Division CN109712809B (zh) 2014-04-09 2015-03-13 用于将射频(rf)与直流(dc)能量耦合至一或多个公共电极的电容组件

Publications (2)

Publication Number Publication Date
CN106133910A CN106133910A (zh) 2016-11-16
CN106133910B true CN106133910B (zh) 2019-09-13

Family

ID=54265642

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201580014300.8A Expired - Fee Related CN106133910B (zh) 2014-04-09 2015-03-13 用于将射频(rf)与直流(dc)能量耦合至一或多个公共电极的电容组件
CN201811141779.3A Expired - Fee Related CN109712809B (zh) 2014-04-09 2015-03-13 用于将射频(rf)与直流(dc)能量耦合至一或多个公共电极的电容组件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201811141779.3A Expired - Fee Related CN109712809B (zh) 2014-04-09 2015-03-13 用于将射频(rf)与直流(dc)能量耦合至一或多个公共电极的电容组件

Country Status (6)

Country Link
US (1) US9355776B2 (enExample)
JP (1) JP6419842B2 (enExample)
KR (1) KR101812049B1 (enExample)
CN (2) CN106133910B (enExample)
TW (1) TWI594360B (enExample)
WO (1) WO2015156956A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018194807A1 (en) * 2017-04-21 2018-10-25 Applied Materials, Inc. Improved electrode assembly
CN112331607B (zh) * 2020-10-28 2024-03-26 北京北方华创微电子装备有限公司 静电卡盘及半导体工艺设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5670066A (en) * 1995-03-17 1997-09-23 Lam Research Corporation Vacuum plasma processing wherein workpiece position is detected prior to chuck being activated
JP2002016045A (ja) * 2000-06-28 2002-01-18 Toshiba Corp プラズマ処理装置
US6431112B1 (en) * 1999-06-15 2002-08-13 Tokyo Electron Limited Apparatus and method for plasma processing of a substrate utilizing an electrostatic chuck
CN101978474A (zh) * 2008-03-20 2011-02-16 应用材料股份有限公司 等离子体室中的可调式接地平面
US8313664B2 (en) * 2008-11-21 2012-11-20 Applied Materials, Inc. Efficient and accurate method for real-time prediction of the self-bias voltage of a wafer and feedback control of ESC voltage in plasma processing chamber

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2651597B2 (ja) * 1988-06-27 1997-09-10 富士通株式会社 ドライエッチング方法及び装置
US6280584B1 (en) * 1998-07-29 2001-08-28 Applied Materials, Inc. Compliant bond structure for joining ceramic to metal
JP4463363B2 (ja) * 1998-12-28 2010-05-19 東京エレクトロン株式会社 下部電極構造およびそれを用いたプラズマ処理装置
US6492612B1 (en) 1998-12-28 2002-12-10 Tokyo Electron Limited Plasma apparatus and lower electrode thereof
JP3659180B2 (ja) * 2000-03-24 2005-06-15 株式会社日立製作所 半導体製造装置および処理方法、およびウエハ電位プローブ
JP3437961B2 (ja) * 2000-05-26 2003-08-18 東京エレクトロン株式会社 基板のプラズマ処理中に基板のバイアスを監視するための改善された装置および方法
JP4878188B2 (ja) * 2006-03-20 2012-02-15 東京エレクトロン株式会社 基板処理装置、堆積物モニタ装置、及び堆積物モニタ方法
JP5264238B2 (ja) * 2008-03-25 2013-08-14 東京エレクトロン株式会社 プラズマ処理装置
CN102160167B (zh) 2008-08-12 2013-12-04 应用材料公司 静电吸盘组件
TWI455172B (zh) * 2010-12-30 2014-10-01 Semes Co Ltd 基板處理設備、電漿阻抗匹配裝置及可變電容器
US20130107415A1 (en) * 2011-10-28 2013-05-02 Applied Materials, Inc. Electrostatic chuck
CN103594315B (zh) * 2012-08-14 2016-04-20 北京北方微电子基地设备工艺研究中心有限责任公司 一种等离子体加工设备

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5670066A (en) * 1995-03-17 1997-09-23 Lam Research Corporation Vacuum plasma processing wherein workpiece position is detected prior to chuck being activated
US6431112B1 (en) * 1999-06-15 2002-08-13 Tokyo Electron Limited Apparatus and method for plasma processing of a substrate utilizing an electrostatic chuck
JP2002016045A (ja) * 2000-06-28 2002-01-18 Toshiba Corp プラズマ処理装置
CN101978474A (zh) * 2008-03-20 2011-02-16 应用材料股份有限公司 等离子体室中的可调式接地平面
US8313664B2 (en) * 2008-11-21 2012-11-20 Applied Materials, Inc. Efficient and accurate method for real-time prediction of the self-bias voltage of a wafer and feedback control of ESC voltage in plasma processing chamber

Also Published As

Publication number Publication date
KR101812049B1 (ko) 2018-01-30
JP6419842B2 (ja) 2018-11-07
WO2015156956A1 (en) 2015-10-15
JP2017512910A (ja) 2017-05-25
TWI594360B (zh) 2017-08-01
CN106133910A (zh) 2016-11-16
US20150294790A1 (en) 2015-10-15
CN109712809B (zh) 2021-04-27
US9355776B2 (en) 2016-05-31
CN109712809A (zh) 2019-05-03
KR20160143765A (ko) 2016-12-14
TW201539643A (zh) 2015-10-16

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Granted publication date: 20190913