TWI594360B - 用於將射頻（ｒｆ）與直流（ｄｃ）能量耦合至一或多個共用電極的電容組件 - Google Patents

用於將射頻（ｒｆ）與直流（ｄｃ）能量耦合至一或多個共用電極的電容組件 Download PDF

Info

Publication number
TWI594360B
TWI594360B TW104108338A TW104108338A TWI594360B TW I594360 B TWI594360 B TW I594360B TW 104108338 A TW104108338 A TW 104108338A TW 104108338 A TW104108338 A TW 104108338A TW I594360 B TWI594360 B TW I594360B
Authority
TW
Taiwan
Prior art keywords
conductive plate
power
capacitor
capacitor assembly
coupled
Prior art date
Application number
TW104108338A
Other languages
English (en)
Chinese (zh)
Other versions
TW201539643A (zh
Inventor
強森卡羅
沃諾斯基雷斯
瑞戈勞倫斯Ａ
路德維格杰弗里
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201539643A publication Critical patent/TW201539643A/zh
Application granted granted Critical
Publication of TWI594360B publication Critical patent/TWI594360B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/22—Electrostatic or magnetic shielding
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/28—Tubular capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW104108338A 2014-04-09 2015-03-16 用於將射頻（ｒｆ）與直流（ｄｃ）能量耦合至一或多個共用電極的電容組件 TWI594360B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/249,327 US9355776B2 (en) 2014-04-09 2014-04-09 Capacitor assemblies for coupling radio frequency (RF) and direct current (DC) energy to one or more common electrodes

Publications (2)

Publication Number Publication Date
TW201539643A TW201539643A (zh) 2015-10-16
TWI594360B true TWI594360B (zh) 2017-08-01

Family

ID=54265642

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104108338A TWI594360B (zh) 2014-04-09 2015-03-16 用於將射頻（ｒｆ）與直流（ｄｃ）能量耦合至一或多個共用電極的電容組件

Country Status (6)

Country Link
US (1) US9355776B2 (enExample)
JP (1) JP6419842B2 (enExample)
KR (1) KR101812049B1 (enExample)
CN (2) CN106133910B (enExample)
TW (1) TWI594360B (enExample)
WO (1) WO2015156956A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018194807A1 (en) * 2017-04-21 2018-10-25 Applied Materials, Inc. Improved electrode assembly
CN112331607B (zh) * 2020-10-28 2024-03-26 北京北方华创微电子装备有限公司 静电卡盘及半导体工艺设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6280584B1 (en) * 1998-07-29 2001-08-28 Applied Materials, Inc. Compliant bond structure for joining ceramic to metal
US6431112B1 (en) * 1999-06-15 2002-08-13 Tokyo Electron Limited Apparatus and method for plasma processing of a substrate utilizing an electrostatic chuck
US20090236214A1 (en) * 2008-03-20 2009-09-24 Karthik Janakiraman Tunable ground planes in plasma chambers

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2651597B2 (ja) * 1988-06-27 1997-09-10 富士通株式会社 ドライエッチング方法及び装置
US5670066A (en) 1995-03-17 1997-09-23 Lam Research Corporation Vacuum plasma processing wherein workpiece position is detected prior to chuck being activated
JP4463363B2 (ja) * 1998-12-28 2010-05-19 東京エレクトロン株式会社 下部電極構造およびそれを用いたプラズマ処理装置
US6492612B1 (en) 1998-12-28 2002-12-10 Tokyo Electron Limited Plasma apparatus and lower electrode thereof
JP3659180B2 (ja) * 2000-03-24 2005-06-15 株式会社日立製作所 半導体製造装置および処理方法、およびウエハ電位プローブ
JP3437961B2 (ja) * 2000-05-26 2003-08-18 東京エレクトロン株式会社 基板のプラズマ処理中に基板のバイアスを監視するための改善された装置および方法
JP3792999B2 (ja) 2000-06-28 2006-07-05 株式会社東芝 プラズマ処理装置
JP4878188B2 (ja) * 2006-03-20 2012-02-15 東京エレクトロン株式会社 基板処理装置、堆積物モニタ装置、及び堆積物モニタ方法
JP5264238B2 (ja) * 2008-03-25 2013-08-14 東京エレクトロン株式会社 プラズマ処理装置
CN102160167B (zh) 2008-08-12 2013-12-04 应用材料公司 静电吸盘组件
US8313664B2 (en) 2008-11-21 2012-11-20 Applied Materials, Inc. Efficient and accurate method for real-time prediction of the self-bias voltage of a wafer and feedback control of ESC voltage in plasma processing chamber
TWI455172B (zh) * 2010-12-30 2014-10-01 Semes Co Ltd 基板處理設備、電漿阻抗匹配裝置及可變電容器
US20130107415A1 (en) * 2011-10-28 2013-05-02 Applied Materials, Inc. Electrostatic chuck
CN103594315B (zh) * 2012-08-14 2016-04-20 北京北方微电子基地设备工艺研究中心有限责任公司 一种等离子体加工设备

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6280584B1 (en) * 1998-07-29 2001-08-28 Applied Materials, Inc. Compliant bond structure for joining ceramic to metal
US6431112B1 (en) * 1999-06-15 2002-08-13 Tokyo Electron Limited Apparatus and method for plasma processing of a substrate utilizing an electrostatic chuck
US20090236214A1 (en) * 2008-03-20 2009-09-24 Karthik Janakiraman Tunable ground planes in plasma chambers

Also Published As

Publication number Publication date
KR101812049B1 (ko) 2018-01-30
JP6419842B2 (ja) 2018-11-07
WO2015156956A1 (en) 2015-10-15
JP2017512910A (ja) 2017-05-25
CN106133910B (zh) 2019-09-13
CN106133910A (zh) 2016-11-16
US20150294790A1 (en) 2015-10-15
CN109712809B (zh) 2021-04-27
US9355776B2 (en) 2016-05-31
CN109712809A (zh) 2019-05-03
KR20160143765A (ko) 2016-12-14
TW201539643A (zh) 2015-10-16

Similar Documents

Publication Publication Date Title
US12205843B2 (en) Ground electrode formed in an electrostatic chuck for a plasma processing chamber
US12020912B2 (en) Integrated electrode and ground plane for a substrate support
KR102594473B1 (ko) 내장형 rf 차폐부를 갖는 반도체 기판 지지부들
US10727096B2 (en) Symmetric chamber body design architecture to address variable process volume with improved flow uniformity/gas conductance
JP7069262B2 (ja) 高温ｒｆ用途のための静電チャック
US20180061618A1 (en) Plasma screen for plasma processing chamber
JP2016531436A (ja) プレクリーニングチャンバおよび半導体処理装置
CN108074855B (zh) 含形成法拉第笼的部分的夹持组件的静电卡盘和相关方法
US20240212995A1 (en) Apparatus for treating substrate
JP6419842B2 (ja) 高周波（ｒｆ）および直流（ｄｃ）エネルギーを１つまたは複数の共通電極に結合させるためのキャパシタアセンブリ
KR20100129369A (ko) 수직 듀얼 챔버로 구성된 대면적 플라즈마 반응기
CN116072497A (zh) 基板处理装置和基板处理方法
US12604705B2 (en) Ceramic susceptor
US10854432B2 (en) Rotary plasma electrical feedthrough