KR101812049B1 - 무선 주파수(rf) 및 직류(dc) 에너지를 하나 또는 그 초과의 공통 전극들에 커플링시키기 위한 캐패시터 어셈블리들 - Google Patents

무선 주파수(rf) 및 직류(dc) 에너지를 하나 또는 그 초과의 공통 전극들에 커플링시키기 위한 캐패시터 어셈블리들 Download PDF

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Publication number
KR101812049B1
KR101812049B1 KR1020167031127A KR20167031127A KR101812049B1 KR 101812049 B1 KR101812049 B1 KR 101812049B1 KR 1020167031127 A KR1020167031127 A KR 1020167031127A KR 20167031127 A KR20167031127 A KR 20167031127A KR 101812049 B1 KR101812049 B1 KR 101812049B1
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South Korea
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conductive plate
power
electrode
direct current
radio frequency
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Korean (ko)
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KR20160143765A (ko
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칼 존슨
레스 워즈노프스키
라우렌스 에이. 링거
제프리 루드위그
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/22—Electrostatic or magnetic shielding
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/28—Tubular capacitors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020167031127A 2014-04-09 2015-03-13 무선 주파수(rf) 및 직류(dc) 에너지를 하나 또는 그 초과의 공통 전극들에 커플링시키기 위한 캐패시터 어셈블리들 Expired - Fee Related KR101812049B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/249,327 2014-04-09
US14/249,327 US9355776B2 (en) 2014-04-09 2014-04-09 Capacitor assemblies for coupling radio frequency (RF) and direct current (DC) energy to one or more common electrodes
PCT/US2015/020501 WO2015156956A1 (en) 2014-04-09 2015-03-13 Capacitor assemblies for coupling radio frequency (rf) and direct current (dc) energy to one or more common electrodes

Publications (2)

Publication Number Publication Date
KR20160143765A KR20160143765A (ko) 2016-12-14
KR101812049B1 true KR101812049B1 (ko) 2018-01-30

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KR1020167031127A Expired - Fee Related KR101812049B1 (ko) 2014-04-09 2015-03-13 무선 주파수(rf) 및 직류(dc) 에너지를 하나 또는 그 초과의 공통 전극들에 커플링시키기 위한 캐패시터 어셈블리들

Country Status (6)

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US (1) US9355776B2 (enExample)
JP (1) JP6419842B2 (enExample)
KR (1) KR101812049B1 (enExample)
CN (2) CN106133910B (enExample)
TW (1) TWI594360B (enExample)
WO (1) WO2015156956A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018194807A1 (en) * 2017-04-21 2018-10-25 Applied Materials, Inc. Improved electrode assembly
CN112331607B (zh) * 2020-10-28 2024-03-26 北京北方华创微电子装备有限公司 静电卡盘及半导体工艺设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014060421A (ja) 2008-08-12 2014-04-03 Applied Materials Inc 静電チャックアセンブリ

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Publication number Priority date Publication date Assignee Title
JP2651597B2 (ja) * 1988-06-27 1997-09-10 富士通株式会社 ドライエッチング方法及び装置
US5670066A (en) 1995-03-17 1997-09-23 Lam Research Corporation Vacuum plasma processing wherein workpiece position is detected prior to chuck being activated
US6280584B1 (en) * 1998-07-29 2001-08-28 Applied Materials, Inc. Compliant bond structure for joining ceramic to metal
JP4463363B2 (ja) * 1998-12-28 2010-05-19 東京エレクトロン株式会社 下部電極構造およびそれを用いたプラズマ処理装置
US6492612B1 (en) 1998-12-28 2002-12-10 Tokyo Electron Limited Plasma apparatus and lower electrode thereof
US6431112B1 (en) * 1999-06-15 2002-08-13 Tokyo Electron Limited Apparatus and method for plasma processing of a substrate utilizing an electrostatic chuck
JP3659180B2 (ja) * 2000-03-24 2005-06-15 株式会社日立製作所 半導体製造装置および処理方法、およびウエハ電位プローブ
JP3437961B2 (ja) * 2000-05-26 2003-08-18 東京エレクトロン株式会社 基板のプラズマ処理中に基板のバイアスを監視するための改善された装置および方法
JP3792999B2 (ja) 2000-06-28 2006-07-05 株式会社東芝 プラズマ処理装置
JP4878188B2 (ja) * 2006-03-20 2012-02-15 東京エレクトロン株式会社 基板処理装置、堆積物モニタ装置、及び堆積物モニタ方法
US20090236214A1 (en) * 2008-03-20 2009-09-24 Karthik Janakiraman Tunable ground planes in plasma chambers
JP5264238B2 (ja) * 2008-03-25 2013-08-14 東京エレクトロン株式会社 プラズマ処理装置
US8313664B2 (en) 2008-11-21 2012-11-20 Applied Materials, Inc. Efficient and accurate method for real-time prediction of the self-bias voltage of a wafer and feedback control of ESC voltage in plasma processing chamber
TWI455172B (zh) * 2010-12-30 2014-10-01 Semes Co Ltd 基板處理設備、電漿阻抗匹配裝置及可變電容器
US20130107415A1 (en) * 2011-10-28 2013-05-02 Applied Materials, Inc. Electrostatic chuck
CN103594315B (zh) * 2012-08-14 2016-04-20 北京北方微电子基地设备工艺研究中心有限责任公司 一种等离子体加工设备

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014060421A (ja) 2008-08-12 2014-04-03 Applied Materials Inc 静電チャックアセンブリ

Also Published As

Publication number Publication date
JP6419842B2 (ja) 2018-11-07
WO2015156956A1 (en) 2015-10-15
JP2017512910A (ja) 2017-05-25
CN106133910B (zh) 2019-09-13
TWI594360B (zh) 2017-08-01
CN106133910A (zh) 2016-11-16
US20150294790A1 (en) 2015-10-15
CN109712809B (zh) 2021-04-27
US9355776B2 (en) 2016-05-31
CN109712809A (zh) 2019-05-03
KR20160143765A (ko) 2016-12-14
TW201539643A (zh) 2015-10-16

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