JP2017512910A5 - - Google Patents

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Publication number
JP2017512910A5
JP2017512910A5 JP2016560966A JP2016560966A JP2017512910A5 JP 2017512910 A5 JP2017512910 A5 JP 2017512910A5 JP 2016560966 A JP2016560966 A JP 2016560966A JP 2016560966 A JP2016560966 A JP 2016560966A JP 2017512910 A5 JP2017512910 A5 JP 2017512910A5
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JP
Japan
Prior art keywords
conductive plate
capacitor
assembly
substrate support
coupled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2016560966A
Other languages
English (en)
Japanese (ja)
Other versions
JP6419842B2 (ja
JP2017512910A (ja
Filing date
Publication date
Priority claimed from US14/249,327 external-priority patent/US9355776B2/en
Application filed filed Critical
Publication of JP2017512910A publication Critical patent/JP2017512910A/ja
Publication of JP2017512910A5 publication Critical patent/JP2017512910A5/ja
Application granted granted Critical
Publication of JP6419842B2 publication Critical patent/JP6419842B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2016560966A 2014-04-09 2015-03-13 高周波（ｒｆ）および直流（ｄｃ）エネルギーを１つまたは複数の共通電極に結合させるためのキャパシタアセンブリ Expired - Fee Related JP6419842B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/249,327 2014-04-09
US14/249,327 US9355776B2 (en) 2014-04-09 2014-04-09 Capacitor assemblies for coupling radio frequency (RF) and direct current (DC) energy to one or more common electrodes
PCT/US2015/020501 WO2015156956A1 (en) 2014-04-09 2015-03-13 Capacitor assemblies for coupling radio frequency (rf) and direct current (dc) energy to one or more common electrodes

Publications (3)

Publication Number Publication Date
JP2017512910A JP2017512910A (ja) 2017-05-25
JP2017512910A5 true JP2017512910A5 (enExample) 2018-04-19
JP6419842B2 JP6419842B2 (ja) 2018-11-07

Family

ID=54265642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016560966A Expired - Fee Related JP6419842B2 (ja) 2014-04-09 2015-03-13 高周波（ｒｆ）および直流（ｄｃ）エネルギーを１つまたは複数の共通電極に結合させるためのキャパシタアセンブリ

Country Status (6)

Country Link
US (1) US9355776B2 (enExample)
JP (1) JP6419842B2 (enExample)
KR (1) KR101812049B1 (enExample)
CN (2) CN106133910B (enExample)
TW (1) TWI594360B (enExample)
WO (1) WO2015156956A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018194807A1 (en) * 2017-04-21 2018-10-25 Applied Materials, Inc. Improved electrode assembly
CN112331607B (zh) * 2020-10-28 2024-03-26 北京北方华创微电子装备有限公司 静电卡盘及半导体工艺设备

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2651597B2 (ja) * 1988-06-27 1997-09-10 富士通株式会社 ドライエッチング方法及び装置
US5670066A (en) 1995-03-17 1997-09-23 Lam Research Corporation Vacuum plasma processing wherein workpiece position is detected prior to chuck being activated
US6280584B1 (en) * 1998-07-29 2001-08-28 Applied Materials, Inc. Compliant bond structure for joining ceramic to metal
JP4463363B2 (ja) * 1998-12-28 2010-05-19 東京エレクトロン株式会社 下部電極構造およびそれを用いたプラズマ処理装置
US6492612B1 (en) 1998-12-28 2002-12-10 Tokyo Electron Limited Plasma apparatus and lower electrode thereof
US6431112B1 (en) * 1999-06-15 2002-08-13 Tokyo Electron Limited Apparatus and method for plasma processing of a substrate utilizing an electrostatic chuck
JP3659180B2 (ja) * 2000-03-24 2005-06-15 株式会社日立製作所 半導体製造装置および処理方法、およびウエハ電位プローブ
JP3437961B2 (ja) * 2000-05-26 2003-08-18 東京エレクトロン株式会社 基板のプラズマ処理中に基板のバイアスを監視するための改善された装置および方法
JP3792999B2 (ja) 2000-06-28 2006-07-05 株式会社東芝 プラズマ処理装置
JP4878188B2 (ja) * 2006-03-20 2012-02-15 東京エレクトロン株式会社 基板処理装置、堆積物モニタ装置、及び堆積物モニタ方法
US20090236214A1 (en) * 2008-03-20 2009-09-24 Karthik Janakiraman Tunable ground planes in plasma chambers
JP5264238B2 (ja) * 2008-03-25 2013-08-14 東京エレクトロン株式会社 プラズマ処理装置
CN102160167B (zh) 2008-08-12 2013-12-04 应用材料公司 静电吸盘组件
US8313664B2 (en) 2008-11-21 2012-11-20 Applied Materials, Inc. Efficient and accurate method for real-time prediction of the self-bias voltage of a wafer and feedback control of ESC voltage in plasma processing chamber
TWI455172B (zh) * 2010-12-30 2014-10-01 Semes Co Ltd 基板處理設備、電漿阻抗匹配裝置及可變電容器
US20130107415A1 (en) * 2011-10-28 2013-05-02 Applied Materials, Inc. Electrostatic chuck
CN103594315B (zh) * 2012-08-14 2016-04-20 北京北方微电子基地设备工艺研究中心有限责任公司 一种等离子体加工设备

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JP6419842B2 (ja) 高周波（ｒｆ）および直流（ｄｃ）エネルギーを１つまたは複数の共通電極に結合させるためのキャパシタアセンブリ