JP6418786B2 - パターンの作成方法、プログラムおよび情報処理装置 - Google Patents

パターンの作成方法、プログラムおよび情報処理装置 Download PDF

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JP6418786B2
JP6418786B2 JP2014107477A JP2014107477A JP6418786B2 JP 6418786 B2 JP6418786 B2 JP 6418786B2 JP 2014107477 A JP2014107477 A JP 2014107477A JP 2014107477 A JP2014107477 A JP 2014107477A JP 6418786 B2 JP6418786 B2 JP 6418786B2
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Japan
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pattern
cell
mask
line
cells
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JP2014107477A
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Japanese (ja)
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JP2015034973A5 (enExample
JP2015034973A (ja
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弘之 石井
弘之 石井
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Canon Inc
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Canon Inc
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Priority to JP2014107477A priority Critical patent/JP6418786B2/ja
Priority to US14/321,669 priority patent/US9383638B2/en
Publication of JP2015034973A publication Critical patent/JP2015034973A/ja
Publication of JP2015034973A5 publication Critical patent/JP2015034973A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
JP2014107477A 2013-07-10 2014-05-23 パターンの作成方法、プログラムおよび情報処理装置 Active JP6418786B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014107477A JP6418786B2 (ja) 2013-07-10 2014-05-23 パターンの作成方法、プログラムおよび情報処理装置
US14/321,669 US9383638B2 (en) 2013-07-10 2014-07-01 Method for generating pattern, storage medium, and information processing apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013144757 2013-07-10
JP2013144757 2013-07-10
JP2014107477A JP6418786B2 (ja) 2013-07-10 2014-05-23 パターンの作成方法、プログラムおよび情報処理装置

Publications (3)

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JP2015034973A JP2015034973A (ja) 2015-02-19
JP2015034973A5 JP2015034973A5 (enExample) 2017-07-06
JP6418786B2 true JP6418786B2 (ja) 2018-11-07

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JP2014107477A Active JP6418786B2 (ja) 2013-07-10 2014-05-23 パターンの作成方法、プログラムおよび情報処理装置

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US (1) US9383638B2 (enExample)
JP (1) JP6418786B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6468792B2 (ja) * 2014-10-21 2019-02-13 日本コントロールシステム株式会社 パターン補正量算出装置、パターン補正量算出方法、およびプログラム
US10789407B1 (en) 2016-03-30 2020-09-29 Silicon Technologies, Inc. Analog design tool having a cell set, and related methods
CN106486063A (zh) * 2016-10-26 2017-03-08 京东方科技集团股份有限公司 像素驱动电路及其驱动方法、显示面板和显示装置
US10691849B2 (en) * 2017-09-28 2020-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. Metal cut optimization for standard cells
KR102632559B1 (ko) * 2018-08-23 2024-02-02 삼성전자주식회사 반도체 소자의 제조 방법, 극 자외선 노광 방법 및 광 근접 보정 방법
CN109508494A (zh) * 2018-11-12 2019-03-22 北京华大九天软件有限公司 一种面板版图设计中加速曝光模拟的方法
KR102867761B1 (ko) 2019-07-19 2025-10-13 삼성전자주식회사 마스크 설계 방법 및 이를 이용한 반도체 장치의 제조 방법
CN111596528B (zh) * 2020-05-25 2023-02-03 上海华力集成电路制造有限公司 一种多晶硅切割图形添加方法
CN119472163B (zh) * 2024-12-24 2025-10-31 格科半导体(上海)有限公司 一种提高光刻工艺窗口的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5682323A (en) * 1995-03-06 1997-10-28 Lsi Logic Corporation System and method for performing optical proximity correction on macrocell libraries
JP3311244B2 (ja) * 1996-07-15 2002-08-05 株式会社東芝 基本セルライブラリ及びその形成方法
US7010764B2 (en) * 2003-04-14 2006-03-07 Takumi Technology Corp. Effective proximity effect correction methodology
US7355673B2 (en) * 2003-06-30 2008-04-08 Asml Masktools B.V. Method, program product and apparatus of simultaneous optimization for NA-Sigma exposure settings and scattering bars OPC using a device layout
JP4592438B2 (ja) * 2005-02-08 2010-12-01 株式会社東芝 半導体集積回路のレイアウト方法、製造方法及びレイアウトプログラム
JP4744980B2 (ja) * 2005-08-25 2011-08-10 株式会社東芝 パターン検証方法、そのプログラム、半導体装置の製造方法
JP4883591B2 (ja) * 2007-01-26 2012-02-22 独立行政法人産業技術総合研究所 マスクパターン設計方法および半導体装置の製造方法
US8286107B2 (en) 2007-02-20 2012-10-09 Tela Innovations, Inc. Methods and systems for process compensation technique acceleration
JP2011238713A (ja) * 2010-05-07 2011-11-24 Sharp Corp 半導体集積回路の設計方法
JP2012033923A (ja) * 2010-07-29 2012-02-16 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法
JP5744564B2 (ja) * 2011-02-25 2015-07-08 キヤノン株式会社 描画装置、描画方法、および、物品の製造方法
US8885917B2 (en) * 2011-12-27 2014-11-11 United Microelectronics Corp. Mask pattern and correcting method thereof

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US9383638B2 (en) 2016-07-05
US20150017572A1 (en) 2015-01-15
JP2015034973A (ja) 2015-02-19

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