JP6416462B2 - 波長可変レーザ装置 - Google Patents

波長可変レーザ装置 Download PDF

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Publication number
JP6416462B2
JP6416462B2 JP2013124866A JP2013124866A JP6416462B2 JP 6416462 B2 JP6416462 B2 JP 6416462B2 JP 2013124866 A JP2013124866 A JP 2013124866A JP 2013124866 A JP2013124866 A JP 2013124866A JP 6416462 B2 JP6416462 B2 JP 6416462B2
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Japan
Prior art keywords
wavelength
semiconductor laser
temperature
control device
temperature control
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JP2013124866A
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English (en)
Japanese (ja)
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JP2015002210A (ja
JP2015002210A5 (enExample
Inventor
田中　宏和
宏和 田中
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Priority to JP2013124866A priority Critical patent/JP6416462B2/ja
Priority to US14/303,357 priority patent/US9281657B2/en
Publication of JP2015002210A publication Critical patent/JP2015002210A/ja
Publication of JP2015002210A5 publication Critical patent/JP2015002210A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/06837—Stabilising otherwise than by an applied electric field or current, e.g. by controlling the temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/34373—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)AsP

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2013124866A 2013-06-13 2013-06-13 波長可変レーザ装置 Active JP6416462B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013124866A JP6416462B2 (ja) 2013-06-13 2013-06-13 波長可変レーザ装置
US14/303,357 US9281657B2 (en) 2013-06-13 2014-06-12 Apparatus for output light with wavelength tunable function and method to determine oscillation wavelength of wavelength tunable laser diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013124866A JP6416462B2 (ja) 2013-06-13 2013-06-13 波長可変レーザ装置

Publications (3)

Publication Number Publication Date
JP2015002210A JP2015002210A (ja) 2015-01-05
JP2015002210A5 JP2015002210A5 (enExample) 2016-07-28
JP6416462B2 true JP6416462B2 (ja) 2018-10-31

Family

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JP2013124866A Active JP6416462B2 (ja) 2013-06-13 2013-06-13 波長可変レーザ装置

Country Status (2)

Country Link
US (1) US9281657B2 (enExample)
JP (1) JP6416462B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6586028B2 (ja) * 2016-02-16 2019-10-02 日本電信電話株式会社 半導体レーザ光源
JP6821901B2 (ja) 2016-07-11 2021-01-27 住友電工デバイス・イノベーション株式会社 波長可変レーザの駆動条件設定方法及び波長可変レーザシステム
JP7077525B2 (ja) * 2016-12-28 2022-05-31 富士通オプティカルコンポーネンツ株式会社 波長可変光源、及びこれを用いた光トランシーバ
JP7077527B2 (ja) * 2017-02-24 2022-05-31 富士通オプティカルコンポーネンツ株式会社 波長可変光源、及び波長制御方法
WO2019004406A1 (ja) * 2017-06-30 2019-01-03 大日本印刷株式会社 回折光学素子及びその製造方法、回折光学素子形成用のアクリル系樹脂組成物、並びに照明装置
JP7488053B2 (ja) * 2020-02-06 2024-05-21 古河電気工業株式会社 レーザ装置およびその制御方法
JP2023149227A (ja) * 2022-03-30 2023-10-13 古河電気工業株式会社 波長可変光モジュール

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4485475A (en) * 1983-05-27 1984-11-27 The Mitre Corporation Optical source peak wavelength control using a wavelength feedback network
US5438579A (en) * 1992-12-18 1995-08-01 Olympus Optical Co., Ltd. Wavelength stabilizing apparatus
JP3237733B2 (ja) 1994-03-30 2001-12-10 日本電信電話株式会社 半導体レーザ
JP2009088015A (ja) * 2007-09-27 2009-04-23 Sumitomo Electric Ind Ltd 回折格子デバイス、半導体レーザおよび波長可変フィルタ
US7929581B2 (en) * 2007-12-28 2011-04-19 Eudyna Devices Inc. Testing method of wavelength-tunable laser, controlling method of wavelength-tunable laser and laser device
JP2009182220A (ja) * 2008-01-31 2009-08-13 Opnext Japan Inc 光伝送モジュール、波長モニタ、および波長ずれ検出方法
JP2011138855A (ja) * 2009-12-28 2011-07-14 Fujitsu Optical Components Ltd 光送信モジュール及びその波長制御方法
JP5457873B2 (ja) * 2010-02-18 2014-04-02 住友電工デバイス・イノベーション株式会社 波長可変レーザの制御方法
JP5499903B2 (ja) * 2010-05-27 2014-05-21 住友電気工業株式会社 半導体レーザ
JP5597029B2 (ja) * 2010-05-27 2014-10-01 住友電気工業株式会社 波長可変半導体レーザ
JP2012119482A (ja) * 2010-11-30 2012-06-21 Sumitomo Electric Ind Ltd 波長可変レーザ装置およびその制御方法
US8380073B2 (en) * 2011-05-24 2013-02-19 Sumitomo Electric Industries, Ltd. Optical transceiver implemented with tunable LD
JP2013033892A (ja) * 2011-06-29 2013-02-14 Sumitomo Electric Ind Ltd 半導体レーザおよびレーザ装置
US20130070795A1 (en) * 2011-09-16 2013-03-21 Sumitomo Electric Industries, Ltd. Method to switch emission wavelength of tunable laser diode

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Publication number Publication date
JP2015002210A (ja) 2015-01-05
US9281657B2 (en) 2016-03-08
US20140369369A1 (en) 2014-12-18

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