JP6416454B2 - 向上した熱散逸能力を有する3d集積電子デバイス構造 - Google Patents
向上した熱散逸能力を有する3d集積電子デバイス構造 Download PDFInfo
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- JP6416454B2 JP6416454B2 JP2012210260A JP2012210260A JP6416454B2 JP 6416454 B2 JP6416454 B2 JP 6416454B2 JP 2012210260 A JP2012210260 A JP 2012210260A JP 2012210260 A JP2012210260 A JP 2012210260A JP 6416454 B2 JP6416454 B2 JP 6416454B2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0081—Thermal properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0077—Other packages not provided for in groups B81B7/0035 - B81B7/0074
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0083—Temperature control
- B81B7/009—Maintaining a constant temperature by heating or cooling
- B81B7/0093—Maintaining a constant temperature by heating or cooling by cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
Description
105 3D集積チップアセンブリ
110 基板
111 110の第1の主面
112 110の第2の主面
114 キャップ層
115 マイクロバンプ接続部
116 複数の入出力接点
118 はんだバンプ
120 複数の第1の入出力接点
121 アンダーフィル材料
122 114の第1の主面
124 114の第2の主面
125 金属相互接続部
126 複数の第2の入出力接点
128 複数のウェハ貫通ビア
130 複数のシリコン貫通電極(TSV)
132 デバイス基板
134 熱伝導材料
136 ヒートスプレッダ
138 複数の入出力接点
140 132の第1の主面
141 熱伝導層
142 はんだバンプ
143 熱伝導性配線
144 能動素子
146 ガラスフリット
148 気密シール
150 132の第2の主面
152 ヒートスプレッダ
154 熱伝導材料
156 熱散逸経路
200 第2の実施形態
300 第3の実施形態
Claims (5)
- 三次元(3D)集積チップアセンブリ(105)であって、
デバイス基板(132)、
前記デバイス基板(132)上に配置される1つまたは複数の熱生成要素を備えるMEMSリレー(144)、
前記デバイス基板(132)に物理的に接合されるキャップ層(114)、
前記MEMSリレー(144)の周囲に配置され、前記MEMSリレーと前記デバイス基板とに電気的に接続されていないシールリング(146)、および
前記MEMSリレー(144)の周囲に形成され、少なくとも部分的に、前記デバイス基板(132)、前記シールリング(146)および前記キャップ層(114)によって画定される、気密シール
を備える、三次元(3D)集積チップアセンブリ(105)と、
前記三次元(3D)集積チップアセンブリ(105)がフリップチップ接合される基板(110)と、
前記デバイス基板(132)よりも熱抵抗が低い複数の熱伝導及び導電経路(156)と、
を備え、
前記複数の熱伝導及び導電経路(156)は、その中で生成される熱を散逸させると共に、前記MEMSリレーに並列電気的接続を提供するために前記三次元(3D)集積チップアセンブリ(105)を通じて延在する、
装置(100、200、300)。 - 前記装置(100、300)からの熱の散逸を容易にするために、熱伝導材料(TIM)(154)を介して前記三次元(3D)集積チップアセンブリ(105)に近接して位置付けられるヒートスプレッダ(152)をさらに備える、請求項1に記載の装置(100、300)。
- 前記キャップ層(114)は、その中に形成される複数のウェハ貫通ビア(130)と、
その第1の主面(122)の上に配置される複数の第1の入出力接点(120)と、
その第2の主面(124)の上に配置される複数の第2の入出力接点(126)と、
をさらに備え、
前記複数の第2の入出力接点(126)は、前記複数のウェハ貫通ビア(130)を通じて前記複数の第1の入出力接点(120)に電気的に接続されている、
請求項1または2に記載の装置(100、300)。 - 前記デバイス基板(132)は、
その中に形成される複数のウェハ貫通ビア(130)と、
その第1の主面(140)の上に配置される複数の第1の入出力接点(120)と、
をさらに備え、
前記複数の第1の入出力接点(120)は、前記複数のウェハ貫通ビア(130)を通じて前記MEMSリレー(144)に電気的に接続されている、
請求項1乃至3のいずれかに記載の装置(200)。 - 三次元(3D)集積チップアセンブリ(105)であって、
デバイス基板(132)上に配置される1つまたは複数の熱生成要素を備えるMEMSリレー(144)を備える前記デバイス基板(132)と、
半導体材料を含み、前記デバイス基板(132)に物理的に接合されるキャップ層(114)、
前記MEMSリレー(144)の周囲に配置され、前記MEMSリレーと前記デバイス基板とに電気的に接続されていないシールリング(146)、および
前記MEMSリレー(144)の周囲に形成され、少なくとも部分的に、前記デバイス基板(132)、前記シールリング(146)および前記キャップ層(114)によって画定される、気密シール
を備える、三次元(3D)集積チップアセンブリと、
前記三次元(3D)集積チップアセンブリ(105)がフリップチップ接合される基板(110)と、
熱伝導材料(TIM)を介して前記三次元(3D)集積チップアセンブリ(105)の近傍に配置されるヒートスプレッダと、
前記デバイス基板(132)よりも熱抵抗が低い複数の熱伝導及び導電経路(156)と、
を備え、
前記複数の熱伝導及び導電経路(156)は、その中で生成される熱を散逸させると共に、前記MEMSリレーに並列電気的接続を提供するために前記三次元(3D)集積チップアセンブリ(105)を通じて延在する、
装置(100、200、300)。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/249,492 | 2011-09-30 | ||
US13/249,492 US8698258B2 (en) | 2011-09-30 | 2011-09-30 | 3D integrated electronic device structure including increased thermal dissipation capabilities |
Publications (3)
Publication Number | Publication Date |
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JP2013080923A JP2013080923A (ja) | 2013-05-02 |
JP2013080923A5 JP2013080923A5 (ja) | 2015-11-05 |
JP6416454B2 true JP6416454B2 (ja) | 2018-10-31 |
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JP2012210260A Active JP6416454B2 (ja) | 2011-09-30 | 2012-09-25 | 向上した熱散逸能力を有する3d集積電子デバイス構造 |
Country Status (4)
Country | Link |
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US (2) | US8698258B2 (ja) |
EP (1) | EP2575164A3 (ja) |
JP (1) | JP6416454B2 (ja) |
CN (1) | CN103030093B (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BR9402301A (pt) | 1994-07-22 | 1996-04-30 | Rheem Ind Comerc Sa | Corpo de lata com sistema de proteçao anti-corte e processo de abtençao de um corpo de lata com sistema de proteçao anti-corte |
US9006889B2 (en) * | 2011-11-11 | 2015-04-14 | Skyworks Solutions, Inc. | Flip chip packages with improved thermal performance |
JP6150249B2 (ja) * | 2013-02-25 | 2017-06-21 | 京セラ株式会社 | 電子デバイスのガラス封止方法 |
US9123686B2 (en) * | 2013-04-12 | 2015-09-01 | Western Digital Technologies, Inc. | Thermal management for solid-state drive |
WO2014209294A1 (en) * | 2013-06-26 | 2014-12-31 | Empire Technology Development Llc | Micro-contact lithography systems forming optical modulators |
KR102066015B1 (ko) | 2013-08-13 | 2020-01-14 | 삼성전자주식회사 | 반도체 패키지 및 이의 제조방법 |
CN105814978B (zh) * | 2014-01-08 | 2018-06-22 | 恩菲斯能源公司 | 双重绝缘散热器 |
US9611137B2 (en) * | 2014-08-26 | 2017-04-04 | Invensense, Inc. | MEMS sensor integrated with a flip chip |
JP6019367B2 (ja) * | 2015-01-13 | 2016-11-02 | 株式会社野田スクリーン | 半導体装置 |
US10107662B2 (en) | 2015-01-30 | 2018-10-23 | Honeywell International Inc. | Sensor assembly |
JP6341190B2 (ja) * | 2015-02-16 | 2018-06-13 | 株式会社デンソー | 半導体装置の製造方法 |
CN105990271B (zh) | 2015-02-26 | 2020-06-05 | 恩智浦美国有限公司 | 具有非水平管芯垫及相应引线框的ic封装 |
US9851398B2 (en) | 2015-03-30 | 2017-12-26 | Globalfoundries Inc. | Via leakage and breakdown testing |
US9548255B1 (en) | 2015-08-17 | 2017-01-17 | Freescale Semiconductor, Inc. | IC package having non-horizontal die pad and flexible substrate therefor |
US10629468B2 (en) | 2016-02-11 | 2020-04-21 | Skyworks Solutions, Inc. | Device packaging using a recyclable carrier substrate |
US20170243739A1 (en) * | 2016-02-24 | 2017-08-24 | Skyworks Solutions, Inc. | 3d micromold and pattern transfer |
US10453763B2 (en) | 2016-08-10 | 2019-10-22 | Skyworks Solutions, Inc. | Packaging structures with improved adhesion and strength |
DE102017204817B4 (de) | 2017-03-22 | 2019-03-21 | Infineon Technologies Ag | Vorrichtung mit Hohlraumstruktur und Verfahren zum Herstellen selbiger |
DE102017012256B3 (de) * | 2017-03-22 | 2021-05-20 | Infineon Technologies Ag | Vorrichtung mit Hohlraumstruktur und Verfahren zum Herstellen selbiger |
CN113044802A (zh) * | 2021-04-13 | 2021-06-29 | 北京航空航天大学 | Mems器件真空封装结构及其制造工艺 |
CN116675175B (zh) * | 2023-08-04 | 2023-12-08 | 青岛泰睿思微电子有限公司 | 一种多功能影像光感封装结构 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5040941Y1 (ja) * | 1970-06-08 | 1975-11-21 | ||
JPH09148499A (ja) * | 1995-11-29 | 1997-06-06 | Miyazaki Oki Electric Co Ltd | 半導体気密封止型パッケージ及びその製造方法 |
JP3846094B2 (ja) * | 1998-03-17 | 2006-11-15 | 株式会社デンソー | 半導体装置の製造方法 |
JP2001053178A (ja) * | 1999-06-02 | 2001-02-23 | Japan Radio Co Ltd | 電子回路装置が封止され回路基板に実装される電子部品及びその製造方法 |
AU1904000A (en) * | 1999-12-17 | 2001-06-25 | Osram Opto Semiconductors Gmbh | Encapsulation for organic led device |
US6384353B1 (en) * | 2000-02-01 | 2002-05-07 | Motorola, Inc. | Micro-electromechanical system device |
US6441481B1 (en) * | 2000-04-10 | 2002-08-27 | Analog Devices, Inc. | Hermetically sealed microstructure package |
US6512300B2 (en) * | 2001-01-10 | 2003-01-28 | Raytheon Company | Water level interconnection |
US6624921B1 (en) * | 2001-03-12 | 2003-09-23 | Amkor Technology, Inc. | Micromirror device package fabrication method |
KR100387239B1 (ko) * | 2001-04-26 | 2003-06-12 | 삼성전자주식회사 | Mems 릴레이 및 그 제조방법 |
WO2002096166A1 (en) | 2001-05-18 | 2002-11-28 | Corporation For National Research Initiatives | Radio frequency microelectromechanical systems (mems) devices on low-temperature co-fired ceramic (ltcc) substrates |
US6559530B2 (en) * | 2001-09-19 | 2003-05-06 | Raytheon Company | Method of integrating MEMS device with low-resistivity silicon substrates |
US6673697B2 (en) * | 2002-04-03 | 2004-01-06 | Intel Corporation | Packaging microelectromechanical structures |
US6696645B2 (en) * | 2002-05-08 | 2004-02-24 | The Regents Of The University Of Michigan | On-wafer packaging for RF-MEMS |
SG111972A1 (en) * | 2002-10-17 | 2005-06-29 | Agency Science Tech & Res | Wafer-level package for micro-electro-mechanical systems |
JP4342174B2 (ja) * | 2002-12-27 | 2009-10-14 | 新光電気工業株式会社 | 電子デバイス及びその製造方法 |
JP2005019966A (ja) * | 2003-06-06 | 2005-01-20 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
US7170155B2 (en) * | 2003-06-25 | 2007-01-30 | Intel Corporation | MEMS RF switch module including a vertical via |
JP4268480B2 (ja) * | 2003-08-27 | 2009-05-27 | 京セラ株式会社 | 電子部品封止用基板およびそれを用いた電子装置 |
US7030642B2 (en) * | 2004-02-06 | 2006-04-18 | Honeywell International Inc. | Quick attachment fixture and power card for diode-based light devices |
US7312505B2 (en) * | 2004-03-31 | 2007-12-25 | Intel Corporation | Semiconductor substrate with interconnections and embedded circuit elements |
US7262509B2 (en) * | 2004-05-11 | 2007-08-28 | Intel Corporation | Microelectronic assembly having a perimeter around a MEMS device |
US7204737B2 (en) * | 2004-09-23 | 2007-04-17 | Temic Automotive Of North America, Inc. | Hermetically sealed microdevice with getter shield |
US7791183B1 (en) * | 2005-04-11 | 2010-09-07 | The United States Of America As Represented By The Secretary Of The Air Force | Universal low cost MEM package |
WO2006124597A2 (en) | 2005-05-12 | 2006-11-23 | Foster Ron B | Infinitely stackable interconnect device and method |
US7491567B2 (en) * | 2005-11-22 | 2009-02-17 | Honeywell International Inc. | MEMS device packaging methods |
US20070114643A1 (en) * | 2005-11-22 | 2007-05-24 | Honeywell International Inc. | Mems flip-chip packaging |
US7936062B2 (en) * | 2006-01-23 | 2011-05-03 | Tessera Technologies Ireland Limited | Wafer level chip packaging |
WO2008079887A2 (en) * | 2006-12-21 | 2008-07-03 | Analog Devices, Inc. | Stacked mems device |
US7723144B2 (en) * | 2007-03-02 | 2010-05-25 | Miradia Inc. | Method and system for flip chip packaging of micro-mirror devices |
US8604603B2 (en) | 2009-02-20 | 2013-12-10 | The Hong Kong University Of Science And Technology | Apparatus having thermal-enhanced and cost-effective 3D IC integration structure with through silicon via interposers |
CN101959106A (zh) * | 2009-07-16 | 2011-01-26 | 鸿富锦精密工业(深圳)有限公司 | 微机电系统麦克风的封装结构及其封装方法 |
-
2011
- 2011-09-30 US US13/249,492 patent/US8698258B2/en active Active
-
2012
- 2012-09-21 EP EP12185346.9A patent/EP2575164A3/en not_active Ceased
- 2012-09-25 JP JP2012210260A patent/JP6416454B2/ja active Active
- 2012-10-08 CN CN201210376998.6A patent/CN103030093B/zh active Active
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2014
- 2014-02-21 US US14/186,362 patent/US8802475B2/en active Active
Also Published As
Publication number | Publication date |
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CN103030093B (zh) | 2018-02-02 |
EP2575164A2 (en) | 2013-04-03 |
EP2575164A3 (en) | 2016-01-13 |
US20130082376A1 (en) | 2013-04-04 |
US20140170811A1 (en) | 2014-06-19 |
US8802475B2 (en) | 2014-08-12 |
US8698258B2 (en) | 2014-04-15 |
CN103030093A (zh) | 2013-04-10 |
JP2013080923A (ja) | 2013-05-02 |
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