JP6416454B2 - 向上した熱散逸能力を有する３ｄ集積電子デバイス構造 - Google Patents

向上した熱散逸能力を有する３ｄ集積電子デバイス構造 Download PDF

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Publication number
JP6416454B2
JP6416454B2 JP2012210260A JP2012210260A JP6416454B2 JP 6416454 B2 JP6416454 B2 JP 6416454B2 JP 2012210260 A JP2012210260 A JP 2012210260A JP 2012210260 A JP2012210260 A JP 2012210260A JP 6416454 B2 JP6416454 B2 JP 6416454B2
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Prior art keywords
cap layer
device substrate
substrate
chip assembly
integrated chip
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English (en)
Japanese (ja)
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JP2013080923A5 (https=
JP2013080923A (ja
Inventor
カウスタブー・ラヴィンドラ・ナガールカール
クリストファー・フレッド・カイメル
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General Electric Co
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General Electric Co
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0081—Thermal properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0077—Other packages not provided for in groups B81B7/0035 - B81B7/0074
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0083—Temperature control
    • B81B7/009—Maintaining a constant temperature by heating or cooling
    • B81B7/0093—Maintaining a constant temperature by heating or cooling by cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H10W40/228—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area the projecting parts being wire-shaped or pin-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/60—Seals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Micromachines (AREA)
JP2012210260A 2011-09-30 2012-09-25 向上した熱散逸能力を有する３ｄ集積電子デバイス構造 Active JP6416454B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/249,492 US8698258B2 (en) 2011-09-30 2011-09-30 3D integrated electronic device structure including increased thermal dissipation capabilities
US13/249,492 2011-09-30

Publications (3)

Publication Number Publication Date
JP2013080923A JP2013080923A (ja) 2013-05-02
JP2013080923A5 JP2013080923A5 (https=) 2015-11-05
JP6416454B2 true JP6416454B2 (ja) 2018-10-31

Family

ID=47221939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012210260A Active JP6416454B2 (ja) 2011-09-30 2012-09-25 向上した熱散逸能力を有する３ｄ集積電子デバイス構造

Country Status (4)

Country Link
US (2) US8698258B2 (https=)
EP (1) EP2575164A3 (https=)
JP (1) JP6416454B2 (https=)
CN (1) CN103030093B (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BR9402301A (pt) 1994-07-22 1996-04-30 Rheem Ind Comerc Sa Corpo de lata com sistema de proteçao anti-corte e processo de abtençao de um corpo de lata com sistema de proteçao anti-corte
US9006889B2 (en) 2011-11-11 2015-04-14 Skyworks Solutions, Inc. Flip chip packages with improved thermal performance
JP6150249B2 (ja) * 2013-02-25 2017-06-21 京セラ株式会社 電子デバイスのガラス封止方法
US9123686B2 (en) * 2013-04-12 2015-09-01 Western Digital Technologies, Inc. Thermal management for solid-state drive
WO2014209294A1 (en) * 2013-06-26 2014-12-31 Empire Technology Development Llc Micro-contact lithography systems forming optical modulators
KR102066015B1 (ko) 2013-08-13 2020-01-14 삼성전자주식회사 반도체 패키지 및 이의 제조방법
WO2015105849A1 (en) * 2014-01-08 2015-07-16 Enphase Energy, Inc. Double insulated heat spreader
US9611137B2 (en) * 2014-08-26 2017-04-04 Invensense, Inc. MEMS sensor integrated with a flip chip
JP6019367B2 (ja) * 2015-01-13 2016-11-02 株式会社野田スクリーン 半導体装置
US10107662B2 (en) 2015-01-30 2018-10-23 Honeywell International Inc. Sensor assembly
JP6341190B2 (ja) * 2015-02-16 2018-06-13 株式会社デンソー 半導体装置の製造方法
CN105990271B (zh) 2015-02-26 2020-06-05 恩智浦美国有限公司 具有非水平管芯垫及相应引线框的ic封装
US9851398B2 (en) 2015-03-30 2017-12-26 Globalfoundries Inc. Via leakage and breakdown testing
US9548255B1 (en) 2015-08-17 2017-01-17 Freescale Semiconductor, Inc. IC package having non-horizontal die pad and flexible substrate therefor
WO2017139542A1 (en) 2016-02-11 2017-08-17 Skyworks Solutions, Inc. Device packaging using a recyclable carrier substrate
US20170243739A1 (en) * 2016-02-24 2017-08-24 Skyworks Solutions, Inc. 3d micromold and pattern transfer
US10453763B2 (en) 2016-08-10 2019-10-22 Skyworks Solutions, Inc. Packaging structures with improved adhesion and strength
DE102017012256B3 (de) * 2017-03-22 2021-05-20 Infineon Technologies Ag Vorrichtung mit Hohlraumstruktur und Verfahren zum Herstellen selbiger
DE102017204817B4 (de) 2017-03-22 2019-03-21 Infineon Technologies Ag Vorrichtung mit Hohlraumstruktur und Verfahren zum Herstellen selbiger
CN113044802A (zh) * 2021-04-13 2021-06-29 北京航空航天大学 Mems器件真空封装结构及其制造工艺
CN116675175B (zh) * 2023-08-04 2023-12-08 青岛泰睿思微电子有限公司 一种多功能影像光感封装结构

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5040941Y1 (https=) * 1970-06-08 1975-11-21
JPH09148499A (ja) * 1995-11-29 1997-06-06 Miyazaki Oki Electric Co Ltd 半導体気密封止型パッケージ及びその製造方法
JP3846094B2 (ja) * 1998-03-17 2006-11-15 株式会社デンソー 半導体装置の製造方法
JP2001053178A (ja) * 1999-06-02 2001-02-23 Japan Radio Co Ltd 電子回路装置が封止され回路基板に実装される電子部品及びその製造方法
DE69908194T2 (de) * 1999-12-17 2004-02-05 Osram Opto Semiconductors Gmbh Kapselung für organische leds
US6384353B1 (en) * 2000-02-01 2002-05-07 Motorola, Inc. Micro-electromechanical system device
US6441481B1 (en) * 2000-04-10 2002-08-27 Analog Devices, Inc. Hermetically sealed microstructure package
US6512300B2 (en) * 2001-01-10 2003-01-28 Raytheon Company Water level interconnection
US6624921B1 (en) * 2001-03-12 2003-09-23 Amkor Technology, Inc. Micromirror device package fabrication method
KR100387239B1 (ko) * 2001-04-26 2003-06-12 삼성전자주식회사 Ｍｅｍｓ 릴레이 및 그 제조방법
US6815739B2 (en) 2001-05-18 2004-11-09 Corporation For National Research Initiatives Radio frequency microelectromechanical systems (MEMS) devices on low-temperature co-fired ceramic (LTCC) substrates
US6559530B2 (en) * 2001-09-19 2003-05-06 Raytheon Company Method of integrating MEMS device with low-resistivity silicon substrates
US6673697B2 (en) * 2002-04-03 2004-01-06 Intel Corporation Packaging microelectromechanical structures
US6696645B2 (en) * 2002-05-08 2004-02-24 The Regents Of The University Of Michigan On-wafer packaging for RF-MEMS
SG111972A1 (en) * 2002-10-17 2005-06-29 Agency Science Tech & Res Wafer-level package for micro-electro-mechanical systems
JP4342174B2 (ja) * 2002-12-27 2009-10-14 新光電気工業株式会社 電子デバイス及びその製造方法
JP2005019966A (ja) * 2003-06-06 2005-01-20 Sanyo Electric Co Ltd 半導体装置及びその製造方法
US7170155B2 (en) * 2003-06-25 2007-01-30 Intel Corporation MEMS RF switch module including a vertical via
JP4268480B2 (ja) * 2003-08-27 2009-05-27 京セラ株式会社 電子部品封止用基板およびそれを用いた電子装置
US7030642B2 (en) * 2004-02-06 2006-04-18 Honeywell International Inc. Quick attachment fixture and power card for diode-based light devices
US7312505B2 (en) * 2004-03-31 2007-12-25 Intel Corporation Semiconductor substrate with interconnections and embedded circuit elements
US7262509B2 (en) * 2004-05-11 2007-08-28 Intel Corporation Microelectronic assembly having a perimeter around a MEMS device
US7204737B2 (en) * 2004-09-23 2007-04-17 Temic Automotive Of North America, Inc. Hermetically sealed microdevice with getter shield
US7791183B1 (en) * 2005-04-11 2010-09-07 The United States Of America As Represented By The Secretary Of The Air Force Universal low cost MEM package
US7897503B2 (en) 2005-05-12 2011-03-01 The Board Of Trustees Of The University Of Arkansas Infinitely stackable interconnect device and method
US20070114643A1 (en) * 2005-11-22 2007-05-24 Honeywell International Inc. Mems flip-chip packaging
US7491567B2 (en) * 2005-11-22 2009-02-17 Honeywell International Inc. MEMS device packaging methods
US7936062B2 (en) * 2006-01-23 2011-05-03 Tessera Technologies Ireland Limited Wafer level chip packaging
US7642657B2 (en) * 2006-12-21 2010-01-05 Analog Devices, Inc. Stacked MEMS device
US7723144B2 (en) * 2007-03-02 2010-05-25 Miradia Inc. Method and system for flip chip packaging of micro-mirror devices
US8604603B2 (en) 2009-02-20 2013-12-10 The Hong Kong University Of Science And Technology Apparatus having thermal-enhanced and cost-effective 3D IC integration structure with through silicon via interposers
CN101959106A (zh) * 2009-07-16 2011-01-26 鸿富锦精密工业（深圳）有限公司 微机电系统麦克风的封装结构及其封装方法

Also Published As

Publication number Publication date
US8698258B2 (en) 2014-04-15
CN103030093A (zh) 2013-04-10
CN103030093B (zh) 2018-02-02
JP2013080923A (ja) 2013-05-02
US20140170811A1 (en) 2014-06-19
EP2575164A3 (en) 2016-01-13
US8802475B2 (en) 2014-08-12
US20130082376A1 (en) 2013-04-04
EP2575164A2 (en) 2013-04-03

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