JP6401378B2 - 無線周波数スイッチを制御するための装置及び方法 - Google Patents

無線周波数スイッチを制御するための装置及び方法 Download PDF

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Publication number
JP6401378B2
JP6401378B2 JP2017506368A JP2017506368A JP6401378B2 JP 6401378 B2 JP6401378 B2 JP 6401378B2 JP 2017506368 A JP2017506368 A JP 2017506368A JP 2017506368 A JP2017506368 A JP 2017506368A JP 6401378 B2 JP6401378 B2 JP 6401378B2
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voltage
charge pump
level shifter
state
mode signal
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JP2017529752A5 (enExample
JP2017529752A (ja
Inventor
ジョナサン クリスチャン クランダル、
ジョナサン クリスチャン クランダル、
ケネス ノーマン ウォーレン、
ケネス ノーマン ウォーレン、
フィリップ エイチ． トンプソン、
フィリップ エイチ． トンプソン、
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Skyworks Solutions Inc
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Skyworks Solutions Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15182—Fan-in arrangement of the internal vias
    • H01L2924/15184—Fan-in arrangement of the internal vias in different layers of the multilayer substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B7/00—Radio transmission systems, i.e. using radiation field
    • H04B7/24—Radio transmission systems, i.e. using radiation field for communication between two or more posts

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Transceivers (AREA)
JP2017506368A 2014-08-07 2015-08-07 無線周波数スイッチを制御するための装置及び方法 Active JP6401378B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462034682P 2014-08-07 2014-08-07
US62/034,682 2014-08-07
US14/745,818 2015-06-22
US14/745,818 US9577626B2 (en) 2014-08-07 2015-06-22 Apparatus and methods for controlling radio frequency switches
PCT/US2015/044374 WO2016023007A1 (en) 2014-08-07 2015-08-07 Apparatus and methods for controlling radio frequency switches

Publications (3)

Publication Number Publication Date
JP2017529752A JP2017529752A (ja) 2017-10-05
JP2017529752A5 JP2017529752A5 (enExample) 2018-01-25
JP6401378B2 true JP6401378B2 (ja) 2018-10-10

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Country Status (5)

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US (2) US9577626B2 (enExample)
JP (1) JP6401378B2 (enExample)
KR (1) KR101913974B1 (enExample)
CN (1) CN106575962B (enExample)
WO (1) WO2016023007A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12500624B2 (en) 2023-03-03 2025-12-16 Kabushiki Kaisha Toshiba Antenna tuning integrated circuit

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7719343B2 (en) 2003-09-08 2010-05-18 Peregrine Semiconductor Corporation Low noise charge pump method and apparatus
JP4659826B2 (ja) * 2004-06-23 2011-03-30 ペレグリン セミコンダクター コーポレーション Ｒｆフロントエンド集積回路
US9577626B2 (en) 2014-08-07 2017-02-21 Skyworks Solutions, Inc. Apparatus and methods for controlling radio frequency switches
US9871512B2 (en) * 2014-08-29 2018-01-16 Skyworks Solutions, Inc. Switch stand-by mode isolation improvement
US9467124B2 (en) 2014-09-30 2016-10-11 Skyworks Solutions, Inc. Voltage generator with charge pump and related methods and apparatus
US9548731B2 (en) 2015-06-16 2017-01-17 Tagore Technology, Inc. High performance radio frequency switch
US9641178B1 (en) 2015-06-16 2017-05-02 Tagore Technology, Inc. Fast Wi-Fi switch with dynamic bias circuit
TWI589117B (zh) * 2015-06-22 2017-06-21 西凱渥資訊處理科技公司 用於控制射頻開關之設備與方法
KR101823269B1 (ko) * 2016-11-18 2018-01-29 삼성전기주식회사 다이나믹 바이어스를 갖는 고주파 스위치 장치
US10116347B1 (en) * 2017-01-05 2018-10-30 CoolStar Technology, Inc. Lossless switch for radio frequency front-end module
JP6817081B2 (ja) * 2017-01-17 2021-01-20 エイブリック株式会社 レベルシフト回路
JP2018129727A (ja) * 2017-02-09 2018-08-16 エイブリック株式会社 レベルシフタ
US10277268B2 (en) * 2017-06-02 2019-04-30 Psemi Corporation Method and apparatus for switching of shunt and through switches of a transceiver
WO2019009087A1 (ja) * 2017-07-06 2019-01-10 株式会社村田製作所 電圧供給回路および高周波回路モジュール
US10475816B2 (en) 2017-10-06 2019-11-12 Qualcomm Incorporated Body current bypass resistor
US10897246B2 (en) * 2017-11-10 2021-01-19 Qorvo Us, Inc. Radio frequency switching circuitry with reduced switching time
CN109818588B (zh) * 2017-11-21 2023-08-22 锐迪科微电子（上海）有限公司 一种射频功率放大器模组
CN111713019A (zh) * 2018-02-12 2020-09-25 诺摩尔有限公司 一种晶体管器件
US10778206B2 (en) * 2018-03-20 2020-09-15 Analog Devices Global Unlimited Company Biasing of radio frequency switches for fast switching
US10749512B2 (en) * 2018-10-08 2020-08-18 Skyworks Solutions, Inc. Switch control circuitry
US20200235741A1 (en) * 2019-01-23 2020-07-23 Aplus Microstructure Electronics Co., Ltd. Voltage level shifter with adjustable threshold voltage value for integrated circuit
CN109616071A (zh) * 2019-01-23 2019-04-12 常州欣盛微结构电子有限公司 用于集成电路可调整临界电压值的电压位准移位器
CN110022144A (zh) * 2019-05-16 2019-07-16 上海猎芯半导体科技有限公司 一种用于射频开关的偏置电路、及射频通信装置
US11431357B2 (en) * 2019-07-09 2022-08-30 Skyworks Solutions, Inc. Envelope controlled radio frequency switches
US11942972B2 (en) 2021-06-28 2024-03-26 Skyworks Solutions, Inc. Radio frequency switch control circuitry
US11967896B2 (en) * 2021-10-12 2024-04-23 Skyworks Solutions, Inc. Charging and discharging circuits for assisting charge pumps
US11863227B2 (en) 2021-10-25 2024-01-02 Analog Devices International Unlimited Company Radio frequency switches with fast switching speed
US11936293B2 (en) * 2022-06-17 2024-03-19 Infineon Technologies Ag Regulated charge pump with adaptive drive strength
WO2024258452A1 (en) * 2023-06-12 2024-12-19 Intel Corporation Apparatus, system, and method of a digital power amplifier
US12413230B2 (en) * 2023-07-13 2025-09-09 Ememory Technology Inc. Level shifting circuit
FR3161826A1 (fr) * 2024-04-26 2025-10-31 Stmicroelectronics International N.V. Commutateur radiofréquence

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5553295A (en) 1994-03-23 1996-09-03 Intel Corporation Method and apparatus for regulating the output voltage of negative charge pumps
JPH09288897A (ja) 1996-04-19 1997-11-04 Sony Corp 電圧供給回路
JP3278765B2 (ja) 1997-11-17 2002-04-30 日本電気株式会社 負電圧生成回路
JP3773718B2 (ja) 1999-09-20 2006-05-10 株式会社東芝 半導体集積回路
JP4697997B2 (ja) 2000-04-13 2011-06-08 エルピーダメモリ株式会社 内部電圧発生回路
US6804502B2 (en) 2001-10-10 2004-10-12 Peregrine Semiconductor Corporation Switch circuit and method of switching radio frequency signals
US6891764B2 (en) 2003-04-11 2005-05-10 Intel Corporation Apparatus and method to read a nonvolatile memory
TWI261406B (en) 2004-07-08 2006-09-01 Analog Integrations Corp Charge pump DC/DC converter with constant-frequency operation
US7038954B2 (en) 2004-08-30 2006-05-02 Micron Technology, Inc. Apparatus with equalizing voltage generation circuit and methods of use
WO2006054246A1 (en) 2004-11-19 2006-05-26 Koninklijke Philips Electronics N.V. Device comprising a controlled matching stage
US7495471B2 (en) 2006-03-06 2009-02-24 Altera Corporation Adjustable transistor body bias circuitry
JP2008011503A (ja) 2006-05-31 2008-01-17 Matsushita Electric Ind Co Ltd 高周波スイッチ回路、高周波スイッチ装置、及び送信モジュール装置
US7554311B2 (en) 2006-07-31 2009-06-30 Sandisk Corporation Hybrid charge pump regulation
US7902907B2 (en) 2007-12-12 2011-03-08 Micron Technology, Inc. Compensation capacitor network for divided diffused resistors for a voltage divider
JP2010103971A (ja) * 2008-09-25 2010-05-06 Toshiba Corp 高周波半導体スイッチ装置
US20100148840A1 (en) 2008-12-16 2010-06-17 Siyou Weng Pulse modulated charge pump circuit
US8131225B2 (en) 2008-12-23 2012-03-06 International Business Machines Corporation BIAS voltage generation circuit for an SOI radio frequency switch
JP2011015289A (ja) * 2009-07-03 2011-01-20 Renesas Electronics Corp 半導体集積回路装置
JP5306094B2 (ja) * 2009-07-24 2013-10-02 セイコーインスツル株式会社 基準電圧回路及び電子機器
JP4960414B2 (ja) 2009-08-31 2012-06-27 株式会社東芝 半導体スイッチ
WO2011045442A2 (en) 2009-10-16 2011-04-21 Ferfics Limited Switching system and method
JP5400567B2 (ja) * 2009-10-23 2014-01-29 株式会社東芝 半導体スイッチ
US8369805B2 (en) * 2010-06-07 2013-02-05 Skyworks Solutions, Inc. High linearity CMOS RF switch passing large signal and quiescent power amplifier current
JP2012049962A (ja) 2010-08-30 2012-03-08 Toshiba Corp 半導体スイッチ回路
US20130029614A1 (en) 2011-07-29 2013-01-31 Samsung Electro-Mechanics Company Systems, Methods, and Apparatuses for Negative-Charge-Pump-Based Antenna Switch Controllers Utilizing Battery Supplies
US9083455B2 (en) 2011-08-30 2015-07-14 Skyworks Solutions, Inc. Reduced clock feed-through systems, methods and apparatus
JP5677930B2 (ja) * 2011-08-31 2015-02-25 株式会社東芝 半導体スイッチ及び無線機器
US8587361B2 (en) * 2011-09-28 2013-11-19 Infineon Technologies Ag RF switch circuit including a series connection of a plurality of transistors, RF switch including an RF switch circuit and method for switching RF signals
JP5221739B2 (ja) * 2011-11-16 2013-06-26 株式会社東芝 高周波半導体スイッチ装置
JP2013131979A (ja) * 2011-12-22 2013-07-04 Toshiba Corp 高周波半導体スイッチ、端末装置
JP5780178B2 (ja) * 2012-02-23 2015-09-16 日立金属株式会社 高周波スイッチモジュール
US9111601B2 (en) 2012-06-08 2015-08-18 Qualcomm Incorporated Negative voltage generators
US9520251B2 (en) 2013-04-26 2016-12-13 Ferfics Limited RF switch with inter-domain ESD protection
US20160006348A1 (en) * 2014-07-07 2016-01-07 Ememory Technology Inc. Charge pump apparatus
US20160034217A1 (en) * 2014-07-31 2016-02-04 Samsung Electronics Co., Ltd. Memory controller configured to control data sanitization and memory system including the same
US9729048B2 (en) 2014-08-04 2017-08-08 Skyworks Solutions, Inc. Apparatus and methods for charge pumps for radio frequency systems
US9577626B2 (en) 2014-08-07 2017-02-21 Skyworks Solutions, Inc. Apparatus and methods for controlling radio frequency switches
US9467124B2 (en) 2014-09-30 2016-10-11 Skyworks Solutions, Inc. Voltage generator with charge pump and related methods and apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12500624B2 (en) 2023-03-03 2025-12-16 Kabushiki Kaisha Toshiba Antenna tuning integrated circuit

Also Published As

Publication number Publication date
KR101913974B1 (ko) 2018-10-31
KR20170041752A (ko) 2017-04-17
CN106575962B (zh) 2020-05-22
CN106575962A (zh) 2017-04-19
US20170126215A1 (en) 2017-05-04
WO2016023007A1 (en) 2016-02-11
US9847774B2 (en) 2017-12-19
US9577626B2 (en) 2017-02-21
US20160043710A1 (en) 2016-02-11
JP2017529752A (ja) 2017-10-05

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