KR101913974B1 - 무선 주파수 스위치들을 제어하기 위한 장치 및 방법들 - Google Patents
무선 주파수 스위치들을 제어하기 위한 장치 및 방법들 Download PDFInfo
- Publication number
- KR101913974B1 KR101913974B1 KR1020177004510A KR20177004510A KR101913974B1 KR 101913974 B1 KR101913974 B1 KR 101913974B1 KR 1020177004510 A KR1020177004510 A KR 1020177004510A KR 20177004510 A KR20177004510 A KR 20177004510A KR 101913974 B1 KR101913974 B1 KR 101913974B1
- Authority
- KR
- South Korea
- Prior art keywords
- voltage
- level shifter
- charge pump
- state
- level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15182—Fan-in arrangement of the internal vias
- H01L2924/15184—Fan-in arrangement of the internal vias in different layers of the multilayer substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B7/00—Radio transmission systems, i.e. using radiation field
- H04B7/24—Radio transmission systems, i.e. using radiation field for communication between two or more posts
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electronic Switches (AREA)
- Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
- Transceivers (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462034682P | 2014-08-07 | 2014-08-07 | |
| US62/034,682 | 2014-08-07 | ||
| US14/745,818 | 2015-06-22 | ||
| US14/745,818 US9577626B2 (en) | 2014-08-07 | 2015-06-22 | Apparatus and methods for controlling radio frequency switches |
| PCT/US2015/044374 WO2016023007A1 (en) | 2014-08-07 | 2015-08-07 | Apparatus and methods for controlling radio frequency switches |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20170041752A KR20170041752A (ko) | 2017-04-17 |
| KR101913974B1 true KR101913974B1 (ko) | 2018-10-31 |
Family
ID=55264687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020177004510A Active KR101913974B1 (ko) | 2014-08-07 | 2015-08-07 | 무선 주파수 스위치들을 제어하기 위한 장치 및 방법들 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US9577626B2 (enExample) |
| JP (1) | JP6401378B2 (enExample) |
| KR (1) | KR101913974B1 (enExample) |
| CN (1) | CN106575962B (enExample) |
| WO (1) | WO2016023007A1 (enExample) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7719343B2 (en) | 2003-09-08 | 2010-05-18 | Peregrine Semiconductor Corporation | Low noise charge pump method and apparatus |
| JP4659826B2 (ja) * | 2004-06-23 | 2011-03-30 | ペレグリン セミコンダクター コーポレーション | Rfフロントエンド集積回路 |
| US9577626B2 (en) | 2014-08-07 | 2017-02-21 | Skyworks Solutions, Inc. | Apparatus and methods for controlling radio frequency switches |
| US9871512B2 (en) * | 2014-08-29 | 2018-01-16 | Skyworks Solutions, Inc. | Switch stand-by mode isolation improvement |
| US9467124B2 (en) | 2014-09-30 | 2016-10-11 | Skyworks Solutions, Inc. | Voltage generator with charge pump and related methods and apparatus |
| US9548731B2 (en) | 2015-06-16 | 2017-01-17 | Tagore Technology, Inc. | High performance radio frequency switch |
| US9641178B1 (en) | 2015-06-16 | 2017-05-02 | Tagore Technology, Inc. | Fast Wi-Fi switch with dynamic bias circuit |
| TWI589117B (zh) * | 2015-06-22 | 2017-06-21 | 西凱渥資訊處理科技公司 | 用於控制射頻開關之設備與方法 |
| KR101823269B1 (ko) * | 2016-11-18 | 2018-01-29 | 삼성전기주식회사 | 다이나믹 바이어스를 갖는 고주파 스위치 장치 |
| US10116347B1 (en) * | 2017-01-05 | 2018-10-30 | CoolStar Technology, Inc. | Lossless switch for radio frequency front-end module |
| JP6817081B2 (ja) * | 2017-01-17 | 2021-01-20 | エイブリック株式会社 | レベルシフト回路 |
| JP2018129727A (ja) * | 2017-02-09 | 2018-08-16 | エイブリック株式会社 | レベルシフタ |
| US10277268B2 (en) * | 2017-06-02 | 2019-04-30 | Psemi Corporation | Method and apparatus for switching of shunt and through switches of a transceiver |
| WO2019009087A1 (ja) * | 2017-07-06 | 2019-01-10 | 株式会社村田製作所 | 電圧供給回路および高周波回路モジュール |
| US10475816B2 (en) | 2017-10-06 | 2019-11-12 | Qualcomm Incorporated | Body current bypass resistor |
| US10897246B2 (en) * | 2017-11-10 | 2021-01-19 | Qorvo Us, Inc. | Radio frequency switching circuitry with reduced switching time |
| CN109818588B (zh) * | 2017-11-21 | 2023-08-22 | 锐迪科微电子(上海)有限公司 | 一种射频功率放大器模组 |
| CN111713019A (zh) * | 2018-02-12 | 2020-09-25 | 诺摩尔有限公司 | 一种晶体管器件 |
| US10778206B2 (en) * | 2018-03-20 | 2020-09-15 | Analog Devices Global Unlimited Company | Biasing of radio frequency switches for fast switching |
| US10749512B2 (en) * | 2018-10-08 | 2020-08-18 | Skyworks Solutions, Inc. | Switch control circuitry |
| US20200235741A1 (en) * | 2019-01-23 | 2020-07-23 | Aplus Microstructure Electronics Co., Ltd. | Voltage level shifter with adjustable threshold voltage value for integrated circuit |
| CN109616071A (zh) * | 2019-01-23 | 2019-04-12 | 常州欣盛微结构电子有限公司 | 用于集成电路可调整临界电压值的电压位准移位器 |
| CN110022144A (zh) * | 2019-05-16 | 2019-07-16 | 上海猎芯半导体科技有限公司 | 一种用于射频开关的偏置电路、及射频通信装置 |
| US11431357B2 (en) * | 2019-07-09 | 2022-08-30 | Skyworks Solutions, Inc. | Envelope controlled radio frequency switches |
| US11942972B2 (en) | 2021-06-28 | 2024-03-26 | Skyworks Solutions, Inc. | Radio frequency switch control circuitry |
| US11967896B2 (en) * | 2021-10-12 | 2024-04-23 | Skyworks Solutions, Inc. | Charging and discharging circuits for assisting charge pumps |
| US11863227B2 (en) | 2021-10-25 | 2024-01-02 | Analog Devices International Unlimited Company | Radio frequency switches with fast switching speed |
| US11936293B2 (en) * | 2022-06-17 | 2024-03-19 | Infineon Technologies Ag | Regulated charge pump with adaptive drive strength |
| WO2024258452A1 (en) * | 2023-06-12 | 2024-12-19 | Intel Corporation | Apparatus, system, and method of a digital power amplifier |
| US12413230B2 (en) * | 2023-07-13 | 2025-09-09 | Ememory Technology Inc. | Level shifting circuit |
| FR3161826A1 (fr) * | 2024-04-26 | 2025-10-31 | Stmicroelectronics International N.V. | Commutateur radiofréquence |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2010103971A (ja) | 2008-09-25 | 2010-05-06 | Toshiba Corp | 高周波半導体スイッチ装置 |
| JP2011015289A (ja) | 2009-07-03 | 2011-01-20 | Renesas Electronics Corp | 半導体集積回路装置 |
| JP2011055129A (ja) | 2009-08-31 | 2011-03-17 | Toshiba Corp | 半導体スイッチ |
| JP2013131979A (ja) * | 2011-12-22 | 2013-07-04 | Toshiba Corp | 高周波半導体スイッチ、端末装置 |
| JP2013175834A (ja) * | 2012-02-23 | 2013-09-05 | Hitachi Metals Ltd | 高周波スイッチモジュール |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5553295A (en) | 1994-03-23 | 1996-09-03 | Intel Corporation | Method and apparatus for regulating the output voltage of negative charge pumps |
| JPH09288897A (ja) | 1996-04-19 | 1997-11-04 | Sony Corp | 電圧供給回路 |
| JP3278765B2 (ja) | 1997-11-17 | 2002-04-30 | 日本電気株式会社 | 負電圧生成回路 |
| JP3773718B2 (ja) | 1999-09-20 | 2006-05-10 | 株式会社東芝 | 半導体集積回路 |
| JP4697997B2 (ja) | 2000-04-13 | 2011-06-08 | エルピーダメモリ株式会社 | 内部電圧発生回路 |
| US6804502B2 (en) | 2001-10-10 | 2004-10-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
| US6891764B2 (en) | 2003-04-11 | 2005-05-10 | Intel Corporation | Apparatus and method to read a nonvolatile memory |
| TWI261406B (en) | 2004-07-08 | 2006-09-01 | Analog Integrations Corp | Charge pump DC/DC converter with constant-frequency operation |
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| JP2008011503A (ja) | 2006-05-31 | 2008-01-17 | Matsushita Electric Ind Co Ltd | 高周波スイッチ回路、高周波スイッチ装置、及び送信モジュール装置 |
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| WO2011045442A2 (en) | 2009-10-16 | 2011-04-21 | Ferfics Limited | Switching system and method |
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| JP2012049962A (ja) | 2010-08-30 | 2012-03-08 | Toshiba Corp | 半導体スイッチ回路 |
| US20130029614A1 (en) | 2011-07-29 | 2013-01-31 | Samsung Electro-Mechanics Company | Systems, Methods, and Apparatuses for Negative-Charge-Pump-Based Antenna Switch Controllers Utilizing Battery Supplies |
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| JP5677930B2 (ja) * | 2011-08-31 | 2015-02-25 | 株式会社東芝 | 半導体スイッチ及び無線機器 |
| US8587361B2 (en) * | 2011-09-28 | 2013-11-19 | Infineon Technologies Ag | RF switch circuit including a series connection of a plurality of transistors, RF switch including an RF switch circuit and method for switching RF signals |
| JP5221739B2 (ja) * | 2011-11-16 | 2013-06-26 | 株式会社東芝 | 高周波半導体スイッチ装置 |
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| US9520251B2 (en) | 2013-04-26 | 2016-12-13 | Ferfics Limited | RF switch with inter-domain ESD protection |
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| US9577626B2 (en) | 2014-08-07 | 2017-02-21 | Skyworks Solutions, Inc. | Apparatus and methods for controlling radio frequency switches |
| US9467124B2 (en) | 2014-09-30 | 2016-10-11 | Skyworks Solutions, Inc. | Voltage generator with charge pump and related methods and apparatus |
-
2015
- 2015-06-22 US US14/745,818 patent/US9577626B2/en active Active
- 2015-08-07 WO PCT/US2015/044374 patent/WO2016023007A1/en not_active Ceased
- 2015-08-07 KR KR1020177004510A patent/KR101913974B1/ko active Active
- 2015-08-07 CN CN201580045548.0A patent/CN106575962B/zh active Active
- 2015-08-07 JP JP2017506368A patent/JP6401378B2/ja active Active
-
2017
- 2017-01-11 US US15/403,951 patent/US9847774B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010103971A (ja) | 2008-09-25 | 2010-05-06 | Toshiba Corp | 高周波半導体スイッチ装置 |
| JP2011015289A (ja) | 2009-07-03 | 2011-01-20 | Renesas Electronics Corp | 半導体集積回路装置 |
| JP2011055129A (ja) | 2009-08-31 | 2011-03-17 | Toshiba Corp | 半導体スイッチ |
| JP2013131979A (ja) * | 2011-12-22 | 2013-07-04 | Toshiba Corp | 高周波半導体スイッチ、端末装置 |
| JP2013175834A (ja) * | 2012-02-23 | 2013-09-05 | Hitachi Metals Ltd | 高周波スイッチモジュール |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170041752A (ko) | 2017-04-17 |
| CN106575962B (zh) | 2020-05-22 |
| CN106575962A (zh) | 2017-04-19 |
| US20170126215A1 (en) | 2017-05-04 |
| JP6401378B2 (ja) | 2018-10-10 |
| WO2016023007A1 (en) | 2016-02-11 |
| US9847774B2 (en) | 2017-12-19 |
| US9577626B2 (en) | 2017-02-21 |
| US20160043710A1 (en) | 2016-02-11 |
| JP2017529752A (ja) | 2017-10-05 |
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