JP6401228B2 - 薄膜トランジスタ基板 - Google Patents
薄膜トランジスタ基板 Download PDFInfo
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- JP6401228B2 JP6401228B2 JP2016239163A JP2016239163A JP6401228B2 JP 6401228 B2 JP6401228 B2 JP 6401228B2 JP 2016239163 A JP2016239163 A JP 2016239163A JP 2016239163 A JP2016239163 A JP 2016239163A JP 6401228 B2 JP6401228 B2 JP 6401228B2
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- 239000010409 thin film Substances 0.000 title claims description 183
- 239000000758 substrate Substances 0.000 title claims description 79
- 239000010408 film Substances 0.000 claims description 240
- 239000004065 semiconductor Substances 0.000 claims description 138
- 150000004767 nitrides Chemical class 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 46
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 143
- 238000000034 method Methods 0.000 description 36
- 230000001681 protective effect Effects 0.000 description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 229910052814 silicon oxide Inorganic materials 0.000 description 22
- 229910052739 hydrogen Inorganic materials 0.000 description 16
- 239000001257 hydrogen Substances 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 229910004205 SiNX Inorganic materials 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 239000007769 metal material Substances 0.000 description 8
- 239000011810 insulating material Substances 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Description
Claims (7)
- 基板上の第1の領域に配置された第1の薄膜トランジスタと、
前記基板上の第2の領域に配置された第2の薄膜トランジスタと、
前記基板上の第3の領域に配置された第1の補助容量電極と、
前記第1の薄膜トランジスタ及び前記第2の薄膜トランジスタを覆い、前記第1の補助容量電極を露出する酸化膜と、
前記酸化膜上に積層され、前記第1の補助容量電極を覆う窒化膜と、
前記窒化膜上で前記第1の補助容量電極と重ね合わせられる第2の補助容量電極と、
前記第1の薄膜トランジスタ、前記第2の薄膜トランジスタ、及び前記第2の補助容量電極を覆う平坦化膜と、
前記平坦化膜上に配置された画素電極と、
を備え、
前記第1の薄膜トランジスタは、
多結晶半導体物質を含む第1の半導体層と、
前記第1の半導体層を覆うゲート絶縁膜と、
前記ゲート絶縁膜上で前記第1の半導体層の中心部と重ね合わせられる第1のゲート電極と、
前記第1のゲート電極とを覆う中間絶縁膜と、
前記中間絶縁膜上で、前記第1の半導体層の一側部と接触する第1のソース電極と、
前記中間絶縁膜上で、前記第1の半導体層の他側部と接触する第1のドレイン電極と、
前記窒化膜と前記酸化膜を貫通して前記第1のドレイン電極を露出する第1の画素コンタクトホールと、
前記第1の画素コンタクトホールを介して前記第1のドレイン電極と接触する補助ドレイン電極と、
を備え、
前記画素電極は、前記平坦化膜を貫通して前記補助ドレイン電極を露出する第2の画素コンタクトホールを介して前記補助ドレイン電極と接触する薄膜トランジスタ基板。 - 前記補助ドレイン電極は、
前記第2の補助容量電極と同じ層に配置され、同じ物質を含む請求項1に記載の薄膜トランジスタ基板。 - 前記第2の薄膜トランジスタは、画素を選択するスイッチング素子であり、
前記第1の薄膜トランジスタは、前記第2の薄膜トランジスタにより選択された前記画素を駆動するための駆動素子である請求項1に記載の薄膜トランジスタ基板。 - 前記酸化膜は、3,000Å以上の厚さを有し、
前記窒化膜は、500〜3,000Åの厚さを有する請求項1に記載の薄膜トランジスタ基板。 - 前記第2の薄膜トランジスタは、
前記ゲート絶縁膜上に配置された第2のゲート電極と、
第2のゲート電極を覆う前記中間絶縁膜と、
前記中間絶縁膜上で、前記第2のゲート電極と重ね合わせられるように配置され、酸化物半導体物質を含む第2の半導体層と、
前記第2の半導体層上に配置された第2のソース電極及び第2のドレイン電極と、
を備える請求項1に記載の薄膜トランジスタ基板。 - 前記第1の補助容量電極は、
前記ゲート絶縁膜上に積層された前記中間絶縁膜上に配置された請求項5に記載の薄膜トランジスタ基板。 - 前記第1の補助容量電極は、
前記第2のソース電極及び前記第2のドレイン電極と同じ層に配置され、同じ物質を含む請求項5に記載の薄膜トランジスタ基板。
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KR1020150187565A KR102465559B1 (ko) | 2015-12-28 | 2015-12-28 | 박막 트랜지스터 기판 및 이를 이용한 표시장치 |
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CN106229297B (zh) * | 2016-09-18 | 2019-04-02 | 深圳市华星光电技术有限公司 | Amoled像素驱动电路的制作方法 |
US10191345B2 (en) | 2016-11-01 | 2019-01-29 | Innolux Corporation | Display device |
CN106935546B (zh) * | 2017-04-12 | 2019-09-06 | 京东方科技集团股份有限公司 | 阵列基板的制备方法、阵列基板、显示面板和显示装置 |
CN107680993B (zh) | 2017-10-23 | 2019-12-24 | 深圳市华星光电半导体显示技术有限公司 | Oled面板及其制作方法 |
US11152551B2 (en) * | 2018-04-27 | 2021-10-19 | Innolux Corporation | Electronic device |
KR20200131399A (ko) * | 2019-05-13 | 2020-11-24 | 삼성디스플레이 주식회사 | 디스플레이 패널 및 이를 포함하는 디스플레이 장치 |
CN115136323A (zh) * | 2020-02-20 | 2022-09-30 | 株式会社尼康 | 晶体管、电子装置及晶体管之制造方法 |
KR20210110464A (ko) * | 2020-02-28 | 2021-09-08 | 삼성디스플레이 주식회사 | 표시 장치 |
CN111785759A (zh) * | 2020-07-17 | 2020-10-16 | 武汉华星光电半导体显示技术有限公司 | 显示面板及显示装置 |
CN112530978B (zh) * | 2020-12-01 | 2024-02-13 | 京东方科技集团股份有限公司 | 开关器件结构及其制备方法、薄膜晶体管膜层、显示面板 |
CN112713179A (zh) * | 2020-12-30 | 2021-04-27 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及显示装置 |
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JP3931547B2 (ja) * | 2000-10-18 | 2007-06-20 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法 |
JP3791338B2 (ja) | 2001-02-08 | 2006-06-28 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法並びに投射型表示装置 |
JP4613491B2 (ja) | 2004-01-13 | 2011-01-19 | セイコーエプソン株式会社 | 電気光学装置の製造方法 |
US7646367B2 (en) * | 2005-01-21 | 2010-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device and electronic apparatus |
WO2011007675A1 (en) * | 2009-07-17 | 2011-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101746198B1 (ko) | 2009-09-04 | 2017-06-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 전자기기 |
KR20120039947A (ko) * | 2010-10-18 | 2012-04-26 | 삼성모바일디스플레이주식회사 | 표시 장치 및 그 제조 방법 |
KR101833235B1 (ko) * | 2011-07-14 | 2018-04-16 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판, 이를 포함하는 유기 발광 표시 장치 및 그 제조 방법 |
CN104220926B (zh) * | 2012-03-27 | 2016-10-05 | 夏普株式会社 | 半导体装置、半导体装置的制造方法和显示装置 |
TWI809474B (zh) * | 2013-05-16 | 2023-07-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
KR102023185B1 (ko) * | 2013-07-08 | 2019-11-05 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
US9818763B2 (en) * | 2013-07-12 | 2017-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing display device |
US9985055B2 (en) * | 2013-10-09 | 2018-05-29 | Sharp Kabushiki Kaisha | Semiconductor device and method for manufacturing same |
US10903246B2 (en) * | 2014-02-24 | 2021-01-26 | Lg Display Co., Ltd. | Thin film transistor substrate and display using the same |
KR102326409B1 (ko) * | 2014-02-24 | 2021-11-16 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 |
US10186528B2 (en) | 2014-02-24 | 2019-01-22 | Lg Display Co., Ltd. | Thin film transistor substrate and display using the same |
KR102457204B1 (ko) * | 2015-08-27 | 2022-10-21 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 이용한 표시장치 |
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CN106920802A (zh) | 2017-07-04 |
KR102465559B1 (ko) | 2022-11-11 |
KR20170077920A (ko) | 2017-07-07 |
US20170186781A1 (en) | 2017-06-29 |
US9954014B2 (en) | 2018-04-24 |
JP2017120893A (ja) | 2017-07-06 |
EP3188236A1 (en) | 2017-07-05 |
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