JP6400361B2 - 基板洗浄方法、基板処理方法、基板処理システム、および半導体装置の製造方法 - Google Patents
基板洗浄方法、基板処理方法、基板処理システム、および半導体装置の製造方法 Download PDFInfo
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Description
(基板処理方法)
図1は本発明の第1の実施形態に係る基板処理方法の一例を示す流れ図、図2A〜図2Eは図1に示すシーケンス中の被処理体の状態を概略的に示す断面図である。
図3は第1の実施形態に係る基板処理方法の一例を実施することが可能な基板処理システムの一例を示す平面図である。
図4は基板洗浄を行うガスクラスターモジュールの一例を概略的に示す断面図である。
(参考例)
第2の実施形態の説明に先立ち、第2の実施形態の参考例を説明する。
図5A〜図5Cは本発明の第2の実施形態の参考例に係るプロセス中の被処理体の状態を概略的に示す断面図である。
図6は本発明の第2の実施形態に係る基板処理方法の一例を示す流れ図、図7A〜図7Dは図6に示すシーケンス中の被処理体の状態を概略的に示す断面図である。
図8は第2の実施形態に係る基板処理方法の一例を実施することが可能な基板処理システムの一例を示す平面図である。
(半導体装置の製造方法)
次に、この発明の実施形態に係る基板処理方法を用いた半導体装置の製造方法の一例を、この発明の第3の実施形態として説明する。
なお、本発明は上記実施形態に限定されることなく種々変形可能である。例えば、上記実施形態では、カーボン膜とカーボン含有シリコン酸化物膜の積層体を例示したが、積層体は、この組み合わせに限られるものではない。例えば、カーボン膜に代えてシリコン窒化物膜を用いることも可能である。
2;薄膜(第1の加工対象膜)
3;加工対象膜(第1の有機膜、第2の加工対象膜)
4;除去対象膜(第2の有機膜、第3の加工対象膜)
5;フォトレジスト層
6;残渣
7;ガスクラスター
8;側壁スペーサ膜
9;パーティクル
9a;エッチング不良
Claims (14)
- 所定パターンにパターニングされた除去対象膜をマスクとして加工対象膜を異方性エッチングした後、前記除去対象膜をガスケミカルエッチングした際に、前記加工対象膜の表面に残存する非反応性または不揮発性の残渣を除去する基板洗浄方法であって、
前記除去対象膜を除去した後の前記加工対象膜の表面を含む被処理面に、ガスクラスターを照射することにより前記残渣を除去することを特徴とする基板洗浄方法。 - 前記残渣は、前記加工対象膜と共通の成分を有することを特徴とする請求項1に記載の基板洗浄方法。
- 前記ガスクラスターは、圧送されたクラスター生成ガスを断熱膨張させることにより形成されたガスクラスターからなることを特徴とする請求項1または請求項2に記載の基板洗浄方法。
- 被処理基板に所定のエッチングパターンを形成する基板処理方法であって、
加工対象膜と、その上に形成されたエッチングマスクとなる除去対象膜とを有する被処理基板を準備する工程と、
前記除去対象膜を所定パターンにパターニングする工程と、
前記パターニングされた前記除去対象膜をエッチングマスクに用いて、前記加工対象膜を異方性エッチングする工程と、
その後、前記加工対象膜上に残存する前記除去対象膜をガスケミカルエッチングする工程と、
前記ガスケミカルエッチング後に、前記加工対象膜の表面を含む被処理面にガスクラスターを照射することにより、前記加工対象膜の表面に残存する非反応性または非揮発性の残渣を除去して洗浄する工程と
を備えることを特徴とする基板処理方法。 - 前記ガスケミカルエッチングする工程と、前記洗浄する工程との間に、
前記ガスケミカルエッチングした後に残る揮発性残渣成分を揮発させる熱処理工程をさらに備えることを特徴とする請求項4に記載の基板処理方法。 - 前記非反応性または非揮発性の残渣は、前記加工対象膜と共通の成分を有することを特徴とする請求項4または請求項5に記載の基板処理方法。
- 前記洗浄する工程に用いる前記ガスクラスターは、圧送されたクラスター生成ガスを断熱膨張させることにより形成されたガスクラスターからなることを特徴とする請求項4から請求項6のいずれか一項に記載の基板処理方法。
- 加工対象膜とその上に形成されたエッチングマスクとなる除去対象膜を有する被処理基板に所定のエッチングパターンを形成する基板処理システムであって、
共通搬送室と、
前記共通搬送室に接続され、前記共通搬送室との間で被処理基板の授受を行うロードロックモジュールと、
前記ロードロックモジュールに接続され、外部との間で被処理基板の授受を行う大気搬送室と、
前記共通搬送室に接続され、前記除去対象膜をエッチングマスクとして用いて前記加工対象膜を異方性エッチングした後に、前記除去対象膜をガスケミカルエッチングするガストリートメントモジュールと、
前記共通搬送室に接続され、前記ガスケミカルエッチング後に、前記加工対象膜の表面を含む被処理面にガスクラスターを照射することにより、前記加工対象膜の表面に残存する非反応性または非揮発性の残渣を除去するガスクラスターモジュールと、
を備えることを特徴とする基板処理システム。 - 前記共通搬送室に接続され、前記ガストリートメントモジュールによりガスケミカルエッチングした後に残る揮発性残渣成分を揮発させる熱処理を行うポストトリートメントモジュールをさらに備えることを特徴とする請求項8に記載の基板処理システム。
- 基板側から上方へ向かって、少なくとも第1の加工対象膜、第2の加工対象膜、第3の加工対象膜、およびマスク層が順次積層された積層体を含む半導体基板を用いた半導体装置の製造方法であって、
前記マスク層をエッチングマスクに用いて、前記第3の加工対象膜を異方性エッチングする工程と、
前記異方性エッチングされた前記第3の加工対象膜をエッチングマスクに用いて、前記第2の加工対象膜を異方性エッチングする工程と、
その後、前記第2の加工対象膜上に残存する前記第3の加工対象膜をガスケミカルエッチングする工程と、
前記ガスケミカルエッチング後に、前記第2の加工対象膜の表面を含む被処理面にガスクラスターを照射することにより、前記第2の加工対象膜の表面に残存する非反応性または非揮発性の残渣を除去して洗浄する工程と、
その後、部分的に露出した前記第1の加工対象膜の表面から前記異方性エッチングされた前記第2の加工対象膜の側面にかけて側壁スペーサ膜を形成する工程と、
前記第2の加工対象膜を除去する工程と、
その後、前記側壁スペーサ膜をエッチングマスク層に用いて、前記第1の加工対象膜を異方性エッチングする工程と
を備えることを特徴とする半導体装置の製造方法。 - 前記第2の加工対象膜を除去する工程と、前記第1の加工対象膜を異方性エッチングする工程との間に、
前記側壁スペーサ膜および前記第1の加工対象膜が存在する被処理面に、ガスクラスターを照射することにより、前記第1の加工対象膜表面に存在するパーティクルを除去して洗浄する工程をさらに備えることを特徴とする請求項10に記載の半導体装置の製造方法。 - 前記第3の加工対象膜をガスケミカルエッチングする工程と、前記洗浄する工程との間に、
前記ガスケミカルエッチングした後に残る揮発性残渣成分を揮発させる熱処理工程を、さらに備えることを特徴とする請求項10または請求項11に記載の半導体装置の製造方法。 - 前記第1の加工対象膜を異方性エッチングする工程の後に、前記異方性エッチングした後に残る揮発性残渣成分を揮発させる熱処理工程をさらに備えることを特徴とする請求項10から請求項12のいずれか一項に記載の半導体装置の製造方法。
- 前記洗浄する工程に用いる前記ガスクラスターは、圧送されたクラスター生成ガスを断熱膨張させることにより形成されたガスクラスターからなることを特徴とする請求項10から請求項13のいずれか一項に記載の半導体装置の製造方法。
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