JP6389590B2 - 遠隔操作システム - Google Patents

遠隔操作システム Download PDF

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Publication number
JP6389590B2
JP6389590B2 JP2013138951A JP2013138951A JP6389590B2 JP 6389590 B2 JP6389590 B2 JP 6389590B2 JP 2013138951 A JP2013138951 A JP 2013138951A JP 2013138951 A JP2013138951 A JP 2013138951A JP 6389590 B2 JP6389590 B2 JP 6389590B2
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JP
Japan
Prior art keywords
transistor
layer
oxide semiconductor
circuit
oxide
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Expired - Fee Related
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JP2013138951A
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English (en)
Japanese (ja)
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JP2014030192A5 (enExample
JP2014030192A (ja
Inventor
山崎　舜平
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2013138951A priority Critical patent/JP6389590B2/ja
Publication of JP2014030192A publication Critical patent/JP2014030192A/ja
Publication of JP2014030192A5 publication Critical patent/JP2014030192A5/ja
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    • G—PHYSICS
    • G08—SIGNALLING
    • G08C—TRANSMISSION SYSTEMS FOR MEASURED VALUES, CONTROL OR SIMILAR SIGNALS
    • G08C17/00—Arrangements for transmitting signals characterised by the use of a wireless electrical link
    • G08C17/02—Arrangements for transmitting signals characterised by the use of a wireless electrical link using a radio link
    • G—PHYSICS
    • G08—SIGNALLING
    • G08C—TRANSMISSION SYSTEMS FOR MEASURED VALUES, CONTROL OR SIMILAR SIGNALS
    • G08C19/00—Electric signal transmission systems
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • G—PHYSICS
    • G08—SIGNALLING
    • G08C—TRANSMISSION SYSTEMS FOR MEASURED VALUES, CONTROL OR SIMILAR SIGNALS
    • G08C2201/00—Transmission systems of control signals via wireless link
    • G—PHYSICS
    • G08—SIGNALLING
    • G08C—TRANSMISSION SYSTEMS FOR MEASURED VALUES, CONTROL OR SIMILAR SIGNALS
    • G08C2201/00—Transmission systems of control signals via wireless link
    • G08C2201/10—Power supply of remote control devices
    • G08C2201/12—Power saving techniques of remote control or controlled devices
    • G—PHYSICS
    • G08—SIGNALLING
    • G08C—TRANSMISSION SYSTEMS FOR MEASURED VALUES, CONTROL OR SIMILAR SIGNALS
    • G08C2201/00—Transmission systems of control signals via wireless link
    • G08C2201/90—Additional features
    • G08C2201/93—Remote control using other portable devices, e.g. mobile phone, PDA, laptop
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Thin Film Transistor (AREA)
  • Remote Monitoring And Control Of Power-Distribution Networks (AREA)
  • Selective Calling Equipment (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Telephonic Communication Services (AREA)
  • Electronic Switches (AREA)
  • Direct Current Feeding And Distribution (AREA)
JP2013138951A 2012-07-05 2013-07-02 遠隔操作システム Expired - Fee Related JP6389590B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013138951A JP6389590B2 (ja) 2012-07-05 2013-07-02 遠隔操作システム

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012151234 2012-07-05
JP2012151234 2012-07-05
JP2013138951A JP6389590B2 (ja) 2012-07-05 2013-07-02 遠隔操作システム

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018153993A Division JP6553265B2 (ja) 2012-07-05 2018-08-20 電子機器

Publications (3)

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JP2014030192A JP2014030192A (ja) 2014-02-13
JP2014030192A5 JP2014030192A5 (enExample) 2016-07-28
JP6389590B2 true JP6389590B2 (ja) 2018-09-12

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JP2013138951A Expired - Fee Related JP6389590B2 (ja) 2012-07-05 2013-07-02 遠隔操作システム
JP2018153993A Active JP6553265B2 (ja) 2012-07-05 2018-08-20 電子機器
JP2019124106A Withdrawn JP2020004974A (ja) 2012-07-05 2019-07-03 電子機器
JP2021189491A Active JP7337900B2 (ja) 2012-07-05 2021-11-22 遠隔操作システム

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JP2018153993A Active JP6553265B2 (ja) 2012-07-05 2018-08-20 電子機器
JP2019124106A Withdrawn JP2020004974A (ja) 2012-07-05 2019-07-03 電子機器
JP2021189491A Active JP7337900B2 (ja) 2012-07-05 2021-11-22 遠隔操作システム

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US (3) US9312390B2 (enExample)
JP (4) JP6389590B2 (enExample)

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