JP6373707B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- JP6373707B2 JP6373707B2 JP2014199708A JP2014199708A JP6373707B2 JP 6373707 B2 JP6373707 B2 JP 6373707B2 JP 2014199708 A JP2014199708 A JP 2014199708A JP 2014199708 A JP2014199708 A JP 2014199708A JP 6373707 B2 JP6373707 B2 JP 6373707B2
- Authority
- JP
- Japan
- Prior art keywords
- antenna
- inductively coupled
- processing apparatus
- plasma processing
- holding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000012545 processing Methods 0.000 title claims description 155
- 230000002093 peripheral effect Effects 0.000 claims description 55
- 230000008878 coupling Effects 0.000 claims description 9
- 238000010168 coupling process Methods 0.000 claims description 9
- 238000005859 coupling reaction Methods 0.000 claims description 9
- 230000001939 inductive effect Effects 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 description 70
- 239000000758 substrate Substances 0.000 description 41
- 239000007789 gas Substances 0.000 description 30
- 238000009826 distribution Methods 0.000 description 23
- 238000000034 method Methods 0.000 description 21
- 230000032258 transport Effects 0.000 description 20
- 230000008569 process Effects 0.000 description 19
- 230000001965 increasing effect Effects 0.000 description 16
- 238000005259 measurement Methods 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000001771 impaired effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Plasma Technology (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014199708A JP6373707B2 (ja) | 2014-09-30 | 2014-09-30 | プラズマ処理装置 |
| TW104129813A TWI581354B (zh) | 2014-09-30 | 2015-09-09 | 電漿處理裝置 |
| KR1020150135449A KR101699177B1 (ko) | 2014-09-30 | 2015-09-24 | 플라즈마 처리 장치 |
| CN201510632845.7A CN105472857B (zh) | 2014-09-30 | 2015-09-29 | 等离子体处理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014199708A JP6373707B2 (ja) | 2014-09-30 | 2014-09-30 | プラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016072065A JP2016072065A (ja) | 2016-05-09 |
| JP6373707B2 true JP6373707B2 (ja) | 2018-08-15 |
Family
ID=55609984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014199708A Expired - Fee Related JP6373707B2 (ja) | 2014-09-30 | 2014-09-30 | プラズマ処理装置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6373707B2 (zh) |
| KR (1) | KR101699177B1 (zh) |
| CN (1) | CN105472857B (zh) |
| TW (1) | TWI581354B (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6999368B2 (ja) * | 2017-11-01 | 2022-01-18 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| CN113889391B (zh) * | 2020-07-02 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置及其绝缘窗组件 |
| TWI786417B (zh) * | 2020-07-14 | 2022-12-11 | 大氣電漿股份有限公司 | 常壓電漿產生裝置 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001037314A1 (en) * | 1999-11-15 | 2001-05-25 | Lam Research Corporation | Materials and gas chemistries for processing systems |
| JP3751909B2 (ja) * | 2002-07-01 | 2006-03-08 | 独立行政法人科学技術振興機構 | プラズマ装置及びプラズマ処理基体 |
| US7567037B2 (en) * | 2003-01-16 | 2009-07-28 | Japan Science And Technology Agency | High frequency power supply device and plasma generator |
| KR101121418B1 (ko) * | 2005-02-17 | 2012-03-16 | 주성엔지니어링(주) | 토로이드형 코어를 포함하는 플라즈마 발생장치 |
| JP2007123008A (ja) * | 2005-10-27 | 2007-05-17 | Nissin Electric Co Ltd | プラズマ生成方法及び装置並びにプラズマ処理装置 |
| JP5162108B2 (ja) * | 2005-10-28 | 2013-03-13 | 日新電機株式会社 | プラズマ生成方法及び装置並びにプラズマ処理装置 |
| JP2007220594A (ja) * | 2006-02-20 | 2007-08-30 | Nissin Electric Co Ltd | プラズマ生成方法及びプラズマ生成装置並びにプラズマ処理装置 |
| JP5138342B2 (ja) * | 2007-11-14 | 2013-02-06 | 株式会社イー・エム・ディー | プラズマ処理装置 |
| WO2011042949A1 (ja) * | 2009-10-05 | 2011-04-14 | 株式会社島津製作所 | 表面波プラズマｃｖｄ装置および成膜方法 |
| WO2011061787A1 (ja) * | 2009-11-17 | 2011-05-26 | 日新電機株式会社 | プラズマ装置 |
| JP5377749B2 (ja) * | 2010-02-25 | 2013-12-25 | シャープ株式会社 | プラズマ生成装置 |
| JP5735232B2 (ja) * | 2010-08-02 | 2015-06-17 | 株式会社イー・エム・ディー | プラズマ処理装置 |
| JP2012049176A (ja) * | 2010-08-24 | 2012-03-08 | Nissin Electric Co Ltd | プラズマ装置 |
| US20130220548A1 (en) * | 2010-09-10 | 2013-08-29 | Emd Corporation | Plasma processing device |
| KR101542905B1 (ko) * | 2013-04-26 | 2015-08-07 | (주)얼라이드 테크 파인더즈 | 반도체 장치 |
| JP2015074792A (ja) * | 2013-10-07 | 2015-04-20 | 株式会社Ｓｃｒｅｅｎホールディングス | プラズマｃｖｄ装置 |
| US9653253B2 (en) * | 2014-03-07 | 2017-05-16 | Advanced Ion Beam Technology, Inc. | Plasma-based material modification using a plasma source with magnetic confinement |
-
2014
- 2014-09-30 JP JP2014199708A patent/JP6373707B2/ja not_active Expired - Fee Related
-
2015
- 2015-09-09 TW TW104129813A patent/TWI581354B/zh not_active IP Right Cessation
- 2015-09-24 KR KR1020150135449A patent/KR101699177B1/ko active IP Right Grant
- 2015-09-29 CN CN201510632845.7A patent/CN105472857B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN105472857A (zh) | 2016-04-06 |
| TW201614759A (en) | 2016-04-16 |
| JP2016072065A (ja) | 2016-05-09 |
| KR20160038787A (ko) | 2016-04-07 |
| KR101699177B1 (ko) | 2017-01-23 |
| CN105472857B (zh) | 2018-04-10 |
| TWI581354B (zh) | 2017-05-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7880392B2 (en) | Plasma producing method and apparatus as well as plasma processing apparatus | |
| US10145014B2 (en) | Film forming apparatus | |
| KR101529578B1 (ko) | 플라즈마 기판 처리 장치 및 방법 | |
| KR102623685B1 (ko) | 이방성 패턴 에칭 및 처리를 위한 방법 및 장치 | |
| US20110253672A1 (en) | Plasma processing apparatus and plasma processing method | |
| US20070144440A1 (en) | Plasma producing method and apparatus as well as plasma processing apparatus | |
| JP2012523120A (ja) | プラズマ処理装置 | |
| US8316796B2 (en) | Film coating system and isolating device thereof | |
| KR102316260B1 (ko) | 플라즈마 처리 장치 | |
| JP6373707B2 (ja) | プラズマ処理装置 | |
| KR20100053253A (ko) | 유도결합 플라즈마 안테나 | |
| JP3618333B2 (ja) | プラズマ生成装置 | |
| US20230230804A1 (en) | Process control for ion energy delivery using multiple generators and phase control | |
| US8480912B2 (en) | Plasma processing apparatus and plasma processing method | |
| KR20150040757A (ko) | 플라즈마 cvd 장치 | |
| KR101781285B1 (ko) | 플라즈마 처리 장치 | |
| CN101086061A (zh) | 用于处理衬底的设备 | |
| JP6431303B2 (ja) | エッチング装置およびエッチング方法 | |
| KR101091556B1 (ko) | 대면적 플라즈마 소스장치 | |
| WO2016002591A1 (ja) | 成膜装置 | |
| CN104505327B (zh) | 一种应用于等离子体设备的腔室结构及等离子体设备 | |
| JP2005281796A (ja) | 表面処理方法及び表面処理装置 | |
| US20240153765A1 (en) | Method and apparatus for producing group iii nitride semiconductor | |
| US20150294839A1 (en) | Plasma processing apparatus and plasma processing method | |
| JP2016014185A (ja) | 成膜装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170626 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20171212 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180109 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180305 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180703 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180718 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6373707 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |