KR101699177B1 - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

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Publication number
KR101699177B1
KR101699177B1 KR1020150135449A KR20150135449A KR101699177B1 KR 101699177 B1 KR101699177 B1 KR 101699177B1 KR 1020150135449 A KR1020150135449 A KR 1020150135449A KR 20150135449 A KR20150135449 A KR 20150135449A KR 101699177 B1 KR101699177 B1 KR 101699177B1
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KR
South Korea
Prior art keywords
antenna
inductively coupled
holding portion
holding
holes
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KR1020150135449A
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English (en)
Korean (ko)
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KR20160038787A (ko
Inventor
고지 하다
사토시 야마모토
Original Assignee
가부시키가이샤 스크린 홀딩스
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Publication of KR20160038787A publication Critical patent/KR20160038787A/ko
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Publication of KR101699177B1 publication Critical patent/KR101699177B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H01L21/205—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Plasma Technology (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
KR1020150135449A 2014-09-30 2015-09-24 플라즈마 처리 장치 KR101699177B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014199708A JP6373707B2 (ja) 2014-09-30 2014-09-30 プラズマ処理装置
JPJP-P-2014-199708 2014-09-30

Publications (2)

Publication Number Publication Date
KR20160038787A KR20160038787A (ko) 2016-04-07
KR101699177B1 true KR101699177B1 (ko) 2017-01-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150135449A KR101699177B1 (ko) 2014-09-30 2015-09-24 플라즈마 처리 장치

Country Status (4)

Country Link
JP (1) JP6373707B2 (zh)
KR (1) KR101699177B1 (zh)
CN (1) CN105472857B (zh)
TW (1) TWI581354B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6999368B2 (ja) * 2017-11-01 2022-01-18 東京エレクトロン株式会社 プラズマ処理装置
CN113889391B (zh) * 2020-07-02 2024-03-12 中微半导体设备(上海)股份有限公司 等离子体处理装置及其绝缘窗组件
TWI786417B (zh) * 2020-07-14 2022-12-11 大氣電漿股份有限公司 常壓電漿產生裝置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3751909B2 (ja) * 2002-07-01 2006-03-08 独立行政法人科学技術振興機構 プラズマ装置及びプラズマ処理基体

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001037314A1 (en) * 1999-11-15 2001-05-25 Lam Research Corporation Materials and gas chemistries for processing systems
US7567037B2 (en) * 2003-01-16 2009-07-28 Japan Science And Technology Agency High frequency power supply device and plasma generator
KR101121418B1 (ko) * 2005-02-17 2012-03-16 주성엔지니어링(주) 토로이드형 코어를 포함하는 플라즈마 발생장치
JP2007123008A (ja) * 2005-10-27 2007-05-17 Nissin Electric Co Ltd プラズマ生成方法及び装置並びにプラズマ処理装置
JP5162108B2 (ja) * 2005-10-28 2013-03-13 日新電機株式会社 プラズマ生成方法及び装置並びにプラズマ処理装置
JP2007220594A (ja) * 2006-02-20 2007-08-30 Nissin Electric Co Ltd プラズマ生成方法及びプラズマ生成装置並びにプラズマ処理装置
JP5138342B2 (ja) * 2007-11-14 2013-02-06 株式会社イー・エム・ディー プラズマ処理装置
WO2011042949A1 (ja) * 2009-10-05 2011-04-14 株式会社島津製作所 表面波プラズマｃｖｄ装置および成膜方法
WO2011061787A1 (ja) * 2009-11-17 2011-05-26 日新電機株式会社 プラズマ装置
JP5377749B2 (ja) * 2010-02-25 2013-12-25 シャープ株式会社 プラズマ生成装置
JP5735232B2 (ja) * 2010-08-02 2015-06-17 株式会社イー・エム・ディー プラズマ処理装置
JP2012049176A (ja) * 2010-08-24 2012-03-08 Nissin Electric Co Ltd プラズマ装置
US20130220548A1 (en) * 2010-09-10 2013-08-29 Emd Corporation Plasma processing device
KR101542905B1 (ko) * 2013-04-26 2015-08-07 (주)얼라이드 테크 파인더즈 반도체 장치
JP2015074792A (ja) * 2013-10-07 2015-04-20 株式会社Ｓｃｒｅｅｎホールディングス プラズマｃｖｄ装置
US9653253B2 (en) * 2014-03-07 2017-05-16 Advanced Ion Beam Technology, Inc. Plasma-based material modification using a plasma source with magnetic confinement

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3751909B2 (ja) * 2002-07-01 2006-03-08 独立行政法人科学技術振興機構 プラズマ装置及びプラズマ処理基体

Also Published As

Publication number Publication date
CN105472857A (zh) 2016-04-06
JP6373707B2 (ja) 2018-08-15
TW201614759A (en) 2016-04-16
JP2016072065A (ja) 2016-05-09
KR20160038787A (ko) 2016-04-07
CN105472857B (zh) 2018-04-10
TWI581354B (zh) 2017-05-01

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