JP6356476B2 - 太陽電池搭載用基板及び太陽電池モジュール - Google Patents
太陽電池搭載用基板及び太陽電池モジュール Download PDFInfo
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- JP6356476B2 JP6356476B2 JP2014092948A JP2014092948A JP6356476B2 JP 6356476 B2 JP6356476 B2 JP 6356476B2 JP 2014092948 A JP2014092948 A JP 2014092948A JP 2014092948 A JP2014092948 A JP 2014092948A JP 6356476 B2 JP6356476 B2 JP 6356476B2
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- 239000000758 substrate Substances 0.000 title claims description 92
- 239000002184 metal Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 229920005989 resin Polymers 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000010248 power generation Methods 0.000 description 9
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
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- 239000010931 gold Substances 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Electromagnetism (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Description
図1は、第1の実施の形態に係る太陽電池モジュールを例示する図であり、図1(b)は平面図、図1(a)は図1(b)のA−A線に沿う断面図である。但し、図1(b)では、図1(a)の一部のみを図示している。又、便宜上、図1(b)では、各溝の内壁面を梨地模様で示している。
第2の実施の形態では、太陽電池の搭載の方法が第1の実施の形態と異なる例を示す。なお、第2の実施の形態において、既に説明した実施の形態と同一構成部についての説明は省略する場合がある。
第1の実施の形態の変形例では、太陽電池を樹脂で覆う例を示す。なお、第1の実施の形態の変形例において、既に説明した実施の形態と同一構成部についての説明は省略する場合がある。
10、10A 太陽電池搭載用基板
20 基板
20a 基板20の一方の面
20b 基板20の他方の面
21、25 第1溝
22、26 第2溝
23、27 第1凹部
24、28 第2凹部
30 金属層
40 パッド
50、50A 太陽電池
51、52 電極
60 ボンディングワイヤ
71、72、73 樹脂
Claims (8)
- 基板と、
前記基板の一方の面に設けられた、太陽電池を搭載するための複数の溝と、を有し、
複数の前記溝は、第1溝と、前記第1溝よりも前記基板の一方の面の周縁側に配置された第2溝と、を含み、
前記第2溝は、前記基板の一方の面を基準として、前記第1溝よりも深く形成されており、
前記第2溝は、前記第1溝と同一深さの第1凹部と、前記第1凹部内に前記第1溝よりも一段下がるように形成された前記第1凹部よりも小さい第2凹部と、を有する段付き構造であり、
夫々の前記溝の内壁面及び底面には、前記太陽電池の2つの電極に接続可能にパターニングされた金属層が形成されている太陽電池搭載用基板。 - 前記基板は前記一方の面の反対面である他方の面を有し、前記第1溝及び前記第2溝はそれぞれ最高点及び最低点を有し、前記第1溝の最高点と前記第2溝の最高点は前記他方の面から同じ高さに位置している請求項1記載の太陽電池搭載用基板。
- 夫々の前記溝は、前記太陽電池を1つずつ搭載可能に構成されている請求項1又は2記載の太陽電池搭載用基板。
- 前記第2溝は、前記第1溝の周囲を囲むように配置されている請求項1乃至3の何れか一項記載の太陽電池搭載用基板。
- 請求項1乃至4の何れか一項記載の太陽電池搭載用基板の夫々の前記溝に、下端に2つの電極が設けられた前記太陽電池が搭載され、
各々の前記電極がパターニングされた前記金属層と接続された太陽電池モジュール。 - 前記第2溝に搭載された前記太陽電池は、前記第1溝に搭載された前記太陽電池よりも低い位置にある請求項5記載の太陽電池モジュール。
- 夫々の前記溝に球状の太陽電池を搭載し、
前記太陽電池に照射される光に対して透明な樹脂を、夫々の前記太陽電池を覆うように設け、
前記樹脂は、夫々の前記太陽電池の形状に対応した凸状に形成されている請求項5又は6記載の太陽電池モジュール。 - 基板と、
前記基板の一方の面に設けられた、太陽電池を搭載するための複数の溝と、
複数の前記溝に夫々搭載された前記太陽電池と、を有し、
複数の前記溝は、第1溝と、前記第1溝よりも前記基板の一方の面の周縁側に配置された第2溝と、を含み、
前記第2溝は、前記基板の一方の面を基準として、前記第1溝よりも深く形成されており、
前記第2溝は、前記第1溝と同一深さの第1凹部と、前記第1凹部内に前記第1溝よりも一段下がるように形成された前記第1凹部よりも小さい第2凹部と、を有する段付き構造であり、
夫々の前記溝の内壁面及び底面には金属層が形成されており、
前記基板の一方の面にはパッドが形成されており、前記太陽電池と前記パッドはボンディングワイヤを介して接続されており、
前記第2溝に搭載された前記太陽電池は、前記第1溝に搭載された前記太陽電池よりも低い位置にある太陽電池モジュール。
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JP2014092948A JP6356476B2 (ja) | 2014-04-28 | 2014-04-28 | 太陽電池搭載用基板及び太陽電池モジュール |
US14/683,259 US9722114B2 (en) | 2014-04-28 | 2015-04-10 | Photovoltaic cell mounting substrate and photovoltaic cell module |
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JP2014092948A JP6356476B2 (ja) | 2014-04-28 | 2014-04-28 | 太陽電池搭載用基板及び太陽電池モジュール |
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JP2015211165A JP2015211165A (ja) | 2015-11-24 |
JP6356476B2 true JP6356476B2 (ja) | 2018-07-11 |
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Families Citing this family (1)
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KR102500233B1 (ko) * | 2021-11-12 | 2023-02-16 | (주)소프트피브이 | 코어쉘 구조의 광발전 파티클을 포함하는 반도체 패키징 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
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US4223174A (en) * | 1976-07-19 | 1980-09-16 | Sun Trac Corporation | Sun-tracking solar energy conversion system |
US4392482A (en) * | 1979-08-02 | 1983-07-12 | Chang Moo K | Solar heating panel arrangement |
US4473065A (en) * | 1980-11-03 | 1984-09-25 | Bates Kenneth N | Solar collector device |
JPH07297438A (ja) * | 1994-04-27 | 1995-11-10 | Tonen Corp | 太陽電池モジュール |
JP2000022184A (ja) * | 1998-07-03 | 2000-01-21 | Nippon Telegr & Teleph Corp <Ntt> | 球状または棒状結晶太陽電池およびその製造方法 |
JP3995132B2 (ja) | 2000-05-29 | 2007-10-24 | 株式会社三井ハイテック | 太陽電池、半導体装置、太陽電池の製造方法および半導体装置の製造方法 |
US6355873B1 (en) * | 2000-06-21 | 2002-03-12 | Ball Semiconductor, Inc. | Spherical shaped solar cell fabrication and panel assembly |
JP3964123B2 (ja) * | 2000-10-24 | 2007-08-22 | 株式会社三井ハイテック | 太陽電池の製造方法 |
US6706959B2 (en) * | 2000-11-24 | 2004-03-16 | Clean Venture 21 Corporation | Photovoltaic apparatus and mass-producing apparatus for mass-producing spherical semiconductor particles |
CA2456671C (en) * | 2001-08-13 | 2009-09-22 | Josuke Nakata | Light emitting or light receiving semiconductor module and making method thereof |
JP4129355B2 (ja) * | 2001-12-20 | 2008-08-06 | 京セラ株式会社 | 光電変換装置 |
JP2007158162A (ja) * | 2005-12-07 | 2007-06-21 | Kyocera Corp | 光電変換装置およびその製造方法 |
US8168465B2 (en) * | 2008-11-13 | 2012-05-01 | Solexel, Inc. | Three-dimensional semiconductor template for making high efficiency thin-film solar cells |
US20100186820A1 (en) * | 2008-11-10 | 2010-07-29 | Schon Steven G | Solar electricity generation with improved efficiency |
US20100108121A1 (en) * | 2008-10-30 | 2010-05-06 | Solapoint Corporation | Concentrating solar cell module |
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