JP6352012B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP6352012B2
JP6352012B2 JP2014053680A JP2014053680A JP6352012B2 JP 6352012 B2 JP6352012 B2 JP 6352012B2 JP 2014053680 A JP2014053680 A JP 2014053680A JP 2014053680 A JP2014053680 A JP 2014053680A JP 6352012 B2 JP6352012 B2 JP 6352012B2
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Japan
Prior art keywords
gate valve
passage
cover
chamber
transfer chamber
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Japanese (ja)
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JP2015177108A (ja
JP2015177108A5 (enExample
Inventor
暢英 布村
暢英 布村
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2014053680A priority Critical patent/JP6352012B2/ja
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  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2014053680A 2014-03-17 2014-03-17 プラズマ処理装置 Active JP6352012B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014053680A JP6352012B2 (ja) 2014-03-17 2014-03-17 プラズマ処理装置

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Application Number Priority Date Filing Date Title
JP2014053680A JP6352012B2 (ja) 2014-03-17 2014-03-17 プラズマ処理装置

Publications (3)

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JP2015177108A JP2015177108A (ja) 2015-10-05
JP2015177108A5 JP2015177108A5 (enExample) 2017-02-23
JP6352012B2 true JP6352012B2 (ja) 2018-07-04

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ID=54255981

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JP2014053680A Active JP6352012B2 (ja) 2014-03-17 2014-03-17 プラズマ処理装置

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JP (1) JP6352012B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025009345A1 (ja) * 2023-07-05 2025-01-09 東京エレクトロン株式会社 プラズマ処理システム、基板処理システムおよびゲートバルブユニット

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5000555B2 (ja) * 2008-03-12 2012-08-15 東京エレクトロン株式会社 ゲートバルブおよび半導体製造装置
JP5190387B2 (ja) * 2009-01-16 2013-04-24 東京エレクトロン株式会社 真空装置及び基板処理装置
JP2011035415A (ja) * 2010-10-18 2011-02-17 Hitachi High-Technologies Corp 真空処理装置
JP5593418B2 (ja) * 2013-05-08 2014-09-24 東京エレクトロン株式会社 処理容器およびプラズマ処理装置

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JP2015177108A (ja) 2015-10-05

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