JP6347917B2 - 液晶表示装置およびその製造方法 - Google Patents
液晶表示装置およびその製造方法 Download PDFInfo
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- JP6347917B2 JP6347917B2 JP2013111016A JP2013111016A JP6347917B2 JP 6347917 B2 JP6347917 B2 JP 6347917B2 JP 2013111016 A JP2013111016 A JP 2013111016A JP 2013111016 A JP2013111016 A JP 2013111016A JP 6347917 B2 JP6347917 B2 JP 6347917B2
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- alignment film
- liquid crystal
- crystal display
- display device
- alignment
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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Description
試験用の配向膜には、以下のようなものを用いた。(化2)のポリイミドの前駆体となるポリアミド酸の骨格について、第1の配向膜の成分として
また、この配向膜を用いて、IPS方式の液晶表示装置を作製し、輝度緩和定数を測定したところ、オゾンを吹き付けなかった膜では54時間であったが、オゾンを吹き付けた膜では42時間と、輝度緩和特性が向上した。
また、この配向膜を用いて、IPS方式の液晶表示装置を作製し、輝度緩和定数を測定したところ、比較た膜では54時間であったが、過酸化水素で処理した膜では36時間と、輝度緩和特性が向上した。
また、この配向膜を用いて、IPS方式の液晶表示装置を作製し、輝度緩和定数を測定したところ、比較した膜では54時間であったが、オゾン水で処理した膜では30時間と、輝度緩和特性が向上した。
Claims (15)
- 画素電極とTFTとを備え、画素の上に配向膜が形成されたTFT基板と、前記TFT基板に対向して配置され、前記TFT基板側の最表面上に対向基板配向膜が形成された対向基板と、前記TFT基板の前記配向膜と前記対向基板の前記対向基板配向膜の間に液晶層が挟持された液晶表示装置であって、
横電界を形成して前記液晶層の配向方向を変化させるものであり、
前記配向膜は偏光光照射により液晶配向規制力を付与可能な疎水性の材料であり、
前記配向膜は、前記液晶層の液晶分子を、ホモジニアス配向させており、
前記配向膜を構成する元素の割合が膜厚方向に向けて変化する層を配向膜表面に有し、
疎水性が維持された状態で前記配向膜表面が配向膜内部よりも酸素原子の割合が高く、
前記配向膜が、(化1)に示すポリイミドを含む光分解型の光配向膜であることを特徴とする液晶表示装置。(化1)中の、括弧[ ]の中が繰り返し単位の化学構造、添え字nは繰り返し単位の数、Nは窒素原子、Oは酸素原子であり、Aはシクロブタン環を含む4価の有機基、Dは2価の有機基を示す。
- 請求項1記載の液晶表示装置において、
前記配向膜を構成する元素の割合が膜厚方向に向けて変化する層の、前記配向膜を構成する酸素の割合が配向膜表面から配向膜内部に向かってなだらかに減少していることを特徴とする液晶表示装置。 - 請求項1記載の液晶表示装置において、
前記元素の割合が膜厚方向に向けて変化する層の中において、酸素の濃度の最も低い位置における酸素割合をA(%)とし、酸素濃度の最も高い位置における酸素割合をB(%)とした場合に、BはAの1.25倍以上であることを特徴とする液晶表示装置。 - 請求項1記載の液晶表示装置において、
前記元素の割合が膜厚方向に向けて変化する層の厚みが、配向膜全体の厚みの50%以下であることを特徴とする液晶表示装置。 - 請求項1記載の液晶表示装置において、
前記配向膜の表面凹凸の大きさが二乗平均平方根で1nm以下であることを特徴とする液晶表示装置。 - 請求項1記載の液晶表示装置において、
前記配向膜表面が配向膜内部よりも炭素原子の割合が低いことを特徴とする液晶表示装置。 - 請求項1記載の液晶表示装置において、
前記配向膜が2種類の積層した構造からなり、光配向が可能な光配向性の上層と前記光配向性の上層よりも抵抗率が小さい低抵抗性の下層からなる2層構造であることを特徴とする液晶表示装置。 - 画素電極とTFTとを備え、画素の上に配向膜が形成されたTFT基板と、前記TFT基板に対向して配置され、前記TFT基板側の最表面上に配向膜が形成された対向基板と、前記TFT基板の配向膜と前記対向基板の配向膜の間に液晶層が挟持された液晶表示装置の製造方法であって、
前記画素電極と前記TFTとを含む前記TFT基板を準備する工程と、
前記TFT基板の上に、(化1)に示すポリイミドを含む光分解型の疎水性の前記配向膜を形成する工程と、
前記配向膜への紫外線照射及び前記配向膜を酸化処理することにより、前記配向膜に配向規制力を発生させると共に、前記配向膜の表面の酸素原子割合を高める工程と、
前記酸化処理の後に、前記配向膜を水で洗浄する工程と、
前記洗浄の後に、前記配向膜上に、前記液晶層の液晶分子を、ホモジニアス配向させる工程と、を有することを特徴とする横電界方式の液晶表示装置の製造方法。
(化1)中の、括弧[ ]の中が繰り返し単位の化学構造、添え字nは繰り返し単位の数、Nは窒素原子、Oは酸素原子であり、Aはシクロブタン環を含む4価の有機基、Dは2価の有機基を示す。
- 請求項8記載の液晶表示装置の製造方法において、
前記酸素原子割合を高める工程後の、前記配向膜の表面における水の接触角が、38度以上であることを特徴とする液晶表示装置の製造方法。 - 請求項8記載の液晶表示装置の製造方法において、
更に、前記対向基板を準備する工程と、
前記対向基板の上に、疎水性の前記配向膜を形成する工程と、
前記配向膜への紫外線照射及び前記配向膜を酸化処理することにより、前記配向膜に配向規制力を発生させると共に、前記配向膜の表面の酸素原子割合を高める工程と、を有することを特徴とする液晶表示装置の製造方法。 - 画素電極とTFTとを備え、画素の上に配向膜が形成されたTFT基板と、前記TFT基板に対向して配置され、前記TFT基板側の最表面上に配向膜が形成された対向基板と、前記TFT基板の配向膜と前記対向基板の配向膜の間に液晶層が挟持された液晶表示装置の製造方法であって、
前記対向基板を準備する工程と、
前記対向基板の上に、(化1)に示すポリイミドを含む光分解型の疎水性の前記配向膜を形成する工程と、
前記配向膜への紫外線照射及び前記配向膜を酸化処理することにより、前記配向膜に配向規制力を発生させると共に、前記配向膜の表面の酸素原子割合を高める工程と、
前記配向膜を水で洗浄する工程と、
前記洗浄の後に、前記配向膜上に、前記液晶層の液晶分子をホモジニアス配向させる工程と、を有することを特徴とする横電界方式の液晶表示装置の製造方法。
(化1)中の、括弧[ ]の中が繰り返し単位の化学構造、添え字nは繰り返し単位の数、Nは窒素原子、Oは酸素原子であり、Aはシクロブタン環を含む4価の有機基、Dは2価の有機基を示す。
- 請求項11記載の液晶表示装置の製造方法において、
前記酸素原子割合を高める工程後の、前記配向膜の表面における水の接触角が、38度以上であることを特徴とする液晶表示装置の製造方法。 - 請求項8ないし12の何れか一項に記載の液晶表示装置の製造方法において、
前記酸素原子割合を高める工程は、前記配向膜にオゾンガスを吹き付ける工程、又は、過酸化水素水、次亜塩素酸水、オゾン水、次亜ヨウ素酸水、及び過マンガン酸水からなる群から選択される酸化剤を前記配向膜に塗布する工程、である、液晶表示装置の製造方法。 - 請求項8ないし13の何れか一項に記載の液晶表示装置の製造方法において、前記酸素原子割合を高める工程は、過酸化水素水、次亜塩素酸水、オゾン水、次亜ヨウ素酸水、及び過マンガン酸水からなる群から選択される酸化剤を前記配向膜に塗布する工程、である、液晶表示装置の製造方法。
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US14/287,353 US9927660B2 (en) | 2013-05-27 | 2014-05-27 | Liquid crystal display device and manufacturing method thereof |
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JP6290117B2 (ja) * | 2014-03-07 | 2018-03-07 | 芝浦メカトロニクス株式会社 | 接液処理装置および接液処理方法 |
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