JP6338416B2 - イオン照射方法およびイオン照射に用いる固定装置 - Google Patents

イオン照射方法およびイオン照射に用いる固定装置 Download PDF

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JP6338416B2
JP6338416B2 JP2014065846A JP2014065846A JP6338416B2 JP 6338416 B2 JP6338416 B2 JP 6338416B2 JP 2014065846 A JP2014065846 A JP 2014065846A JP 2014065846 A JP2014065846 A JP 2014065846A JP 6338416 B2 JP6338416 B2 JP 6338416B2
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JP2015191914A5 (enExample
JP2015191914A (ja
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井上　剛
剛 井上
仁 坂根
仁 坂根
章賀 正岡
章賀 正岡
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Shi Atex Co Ltd
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JP6732645B2 (ja) * 2016-12-07 2020-07-29 住重アテックス株式会社 固定装置およびイオン照射方法
JP6914600B2 (ja) * 2017-10-24 2021-08-04 住重アテックス株式会社 固定装置およびイオン照射方法
JP7735202B2 (ja) * 2022-02-28 2025-09-08 住重アテックス株式会社 イオン照射方法

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JP2002110637A (ja) * 2000-09-26 2002-04-12 Applied Materials Inc マスク部材、マスク部材セット、基体処理方法、半導体装置の製造方法、及び、半導体装置の製造条件決定方法
US7820460B2 (en) * 2007-09-07 2010-10-26 Varian Semiconductor Equipment Associates, Inc. Patterned assembly for manufacturing a solar cell and a method thereof
JP2010186820A (ja) * 2009-02-10 2010-08-26 Toyota Motor Corp 半導体装置の製造方法
EP2515328B1 (en) * 2009-12-15 2016-05-04 Toyota Jidosha Kabushiki Kaisha Method for manufacturing semiconductor device
JP5510070B2 (ja) * 2010-05-26 2014-06-04 トヨタ自動車株式会社 半導体装置の製造方法
JP5892802B2 (ja) * 2012-02-09 2016-03-23 住友重機械工業株式会社 イオン注入方法、搬送容器及びイオン注入装置

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