JP6332980B2 - 光伝導素子、光伝導素子の製造方法、及び、テラヘルツ時間領域分光装置 - Google Patents

光伝導素子、光伝導素子の製造方法、及び、テラヘルツ時間領域分光装置 Download PDF

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JP6332980B2
JP6332980B2 JP2014012784A JP2014012784A JP6332980B2 JP 6332980 B2 JP6332980 B2 JP 6332980B2 JP 2014012784 A JP2014012784 A JP 2014012784A JP 2014012784 A JP2014012784 A JP 2014012784A JP 6332980 B2 JP6332980 B2 JP 6332980B2
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semiconductor layer
photoconductive element
gaas
element according
substrate
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Japanese (ja)
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JP2014197669A5 (OSRAM
JP2014197669A (ja
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佐藤　崇広
崇広 佐藤
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Canon Inc
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Canon Inc
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Priority to US14/199,870 priority patent/US20140252379A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/16—Resonant antennas with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole
    • H01Q9/28—Conical, cylindrical, cage, strip, gauze, or like elements having an extended radiating surface; Elements comprising two conical surfaces having collinear axes and adjacent apices and fed by two-conductor transmission lines
    • H01Q9/285—Planar dipole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1276—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising growth substrates not made of Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Recrystallisation Techniques (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2014012784A 2013-03-08 2014-01-27 光伝導素子、光伝導素子の製造方法、及び、テラヘルツ時間領域分光装置 Active JP6332980B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014012784A JP6332980B2 (ja) 2013-03-08 2014-01-27 光伝導素子、光伝導素子の製造方法、及び、テラヘルツ時間領域分光装置
US14/199,870 US20140252379A1 (en) 2013-03-08 2014-03-06 Photoconductive antennas, method for producing photoconductive antennas, and terahertz time domain spectroscopy system

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013046576 2013-03-08
JP2013046576 2013-03-08
JP2014012784A JP6332980B2 (ja) 2013-03-08 2014-01-27 光伝導素子、光伝導素子の製造方法、及び、テラヘルツ時間領域分光装置

Publications (3)

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JP2014197669A JP2014197669A (ja) 2014-10-16
JP2014197669A5 JP2014197669A5 (OSRAM) 2017-03-02
JP6332980B2 true JP6332980B2 (ja) 2018-05-30

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US (1) US20140252379A1 (OSRAM)
JP (1) JP6332980B2 (OSRAM)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016067906A1 (ja) * 2014-10-30 2016-05-06 三菱電機株式会社 アレイアンテナ装置およびその製造方法
CN104576785B (zh) * 2014-12-04 2016-08-17 中国科学院上海微系统与信息技术研究所 一种用于高In组分InGaAs探测器的突变弛豫缓冲层
EP3035394A1 (en) 2014-12-17 2016-06-22 Centre National de la Recherche Scientifique Photoconductive antenna for terahertz waves, method for producing such photoconductive antenna and terahertz time domain spectroscopy system
JP2017045802A (ja) * 2015-08-25 2017-03-02 キヤノン株式会社 光伝導素子
JP2017156213A (ja) * 2016-03-02 2017-09-07 パイオニア株式会社 電磁波計測装置
US11469509B2 (en) 2016-09-07 2022-10-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Terahertz transceivers
RU2624612C1 (ru) * 2016-10-07 2017-07-04 Федеральное государственное бюджетное учреждение науки Институт сверхвысокочастотной полупроводниковой электроники Российской академии наук (ИСВЧПЭ РАН) Полупроводниковая структура для фотопроводящих антенн
JP6942006B2 (ja) * 2017-08-25 2021-09-29 パイオニア株式会社 電磁波計測装置
JP6397553B1 (ja) * 2017-10-25 2018-09-26 東芝機械株式会社 転写装置
CN109001834A (zh) * 2018-06-22 2018-12-14 天和防务技术（北京）有限公司 一种基于主动式太赫兹安检方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61141116A (ja) * 1984-12-13 1986-06-28 Seiko Epson Corp 半導体基板
AU2002357038A1 (en) * 2001-11-29 2003-06-10 Picometrix, Inc. Amplified photoconductive gate
GB2393037B (en) * 2002-09-11 2007-05-23 Tera View Ltd Method of enhancing the photoconductive properties of a semiconductor and method of producing a seminconductor with enhanced photoconductive properties
US8529698B2 (en) * 2008-11-11 2013-09-10 Arizona Board Of Regents For And On Behalf Of Arizona State University Ingan columnar nano-heterostructures for solar cells
JP2010225981A (ja) * 2009-03-25 2010-10-07 Fujitsu Ltd 光半導体素子、集積素子、光半導体素子の製造方法
JP6062640B2 (ja) * 2011-03-18 2017-01-18 キヤノン株式会社 光伝導素子
WO2013033671A1 (en) * 2011-09-02 2013-03-07 Amberwave, Inc. Solar cell
WO2013074530A2 (en) * 2011-11-15 2013-05-23 Solar Junction Corporation High efficiency multijunction solar cells

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JP2014197669A (ja) 2014-10-16

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