JP2014197669A5 - - Google Patents

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Publication number
JP2014197669A5
JP2014197669A5 JP2014012784A JP2014012784A JP2014197669A5 JP 2014197669 A5 JP2014197669 A5 JP 2014197669A5 JP 2014012784 A JP2014012784 A JP 2014012784A JP 2014012784 A JP2014012784 A JP 2014012784A JP 2014197669 A5 JP2014197669 A5 JP 2014197669A5
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JP
Japan
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semiconductor layer
photoconductive
photoconductive element
element according
layer
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JP2014012784A
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English (en)
Japanese (ja)
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JP2014197669A (ja
JP6332980B2 (ja
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Priority claimed from JP2014012784A external-priority patent/JP6332980B2/ja
Priority to US14/199,870 priority patent/US20140252379A1/en
Publication of JP2014197669A publication Critical patent/JP2014197669A/ja
Publication of JP2014197669A5 publication Critical patent/JP2014197669A5/ja
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JP2014012784A 2013-03-08 2014-01-27 光伝導素子、光伝導素子の製造方法、及び、テラヘルツ時間領域分光装置 Active JP6332980B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014012784A JP6332980B2 (ja) 2013-03-08 2014-01-27 光伝導素子、光伝導素子の製造方法、及び、テラヘルツ時間領域分光装置
US14/199,870 US20140252379A1 (en) 2013-03-08 2014-03-06 Photoconductive antennas, method for producing photoconductive antennas, and terahertz time domain spectroscopy system

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013046576 2013-03-08
JP2013046576 2013-03-08
JP2014012784A JP6332980B2 (ja) 2013-03-08 2014-01-27 光伝導素子、光伝導素子の製造方法、及び、テラヘルツ時間領域分光装置

Publications (3)

Publication Number Publication Date
JP2014197669A JP2014197669A (ja) 2014-10-16
JP2014197669A5 true JP2014197669A5 (OSRAM) 2017-03-02
JP6332980B2 JP6332980B2 (ja) 2018-05-30

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ID=51486743

Family Applications (1)

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JP2014012784A Active JP6332980B2 (ja) 2013-03-08 2014-01-27 光伝導素子、光伝導素子の製造方法、及び、テラヘルツ時間領域分光装置

Country Status (2)

Country Link
US (1) US20140252379A1 (OSRAM)
JP (1) JP6332980B2 (OSRAM)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016067906A1 (ja) * 2014-10-30 2016-05-06 三菱電機株式会社 アレイアンテナ装置およびその製造方法
CN104576785B (zh) * 2014-12-04 2016-08-17 中国科学院上海微系统与信息技术研究所 一种用于高In组分InGaAs探测器的突变弛豫缓冲层
EP3035394A1 (en) 2014-12-17 2016-06-22 Centre National de la Recherche Scientifique Photoconductive antenna for terahertz waves, method for producing such photoconductive antenna and terahertz time domain spectroscopy system
JP2017045802A (ja) * 2015-08-25 2017-03-02 キヤノン株式会社 光伝導素子
JP2017156213A (ja) * 2016-03-02 2017-09-07 パイオニア株式会社 電磁波計測装置
US11469509B2 (en) 2016-09-07 2022-10-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Terahertz transceivers
RU2624612C1 (ru) * 2016-10-07 2017-07-04 Федеральное государственное бюджетное учреждение науки Институт сверхвысокочастотной полупроводниковой электроники Российской академии наук (ИСВЧПЭ РАН) Полупроводниковая структура для фотопроводящих антенн
JP6942006B2 (ja) * 2017-08-25 2021-09-29 パイオニア株式会社 電磁波計測装置
JP6397553B1 (ja) * 2017-10-25 2018-09-26 東芝機械株式会社 転写装置
CN109001834A (zh) * 2018-06-22 2018-12-14 天和防务技术（北京）有限公司 一种基于主动式太赫兹安检方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61141116A (ja) * 1984-12-13 1986-06-28 Seiko Epson Corp 半導体基板
AU2002357038A1 (en) * 2001-11-29 2003-06-10 Picometrix, Inc. Amplified photoconductive gate
GB2393037B (en) * 2002-09-11 2007-05-23 Tera View Ltd Method of enhancing the photoconductive properties of a semiconductor and method of producing a seminconductor with enhanced photoconductive properties
US8529698B2 (en) * 2008-11-11 2013-09-10 Arizona Board Of Regents For And On Behalf Of Arizona State University Ingan columnar nano-heterostructures for solar cells
JP2010225981A (ja) * 2009-03-25 2010-10-07 Fujitsu Ltd 光半導体素子、集積素子、光半導体素子の製造方法
JP6062640B2 (ja) * 2011-03-18 2017-01-18 キヤノン株式会社 光伝導素子
WO2013033671A1 (en) * 2011-09-02 2013-03-07 Amberwave, Inc. Solar cell
WO2013074530A2 (en) * 2011-11-15 2013-05-23 Solar Junction Corporation High efficiency multijunction solar cells

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