JP6329482B2 - 低圧pecvdによってガラス基板上に層を蒸着するための方法 - Google Patents
低圧pecvdによってガラス基板上に層を蒸着するための方法 Download PDFInfo
- Publication number
- JP6329482B2 JP6329482B2 JP2014511877A JP2014511877A JP6329482B2 JP 6329482 B2 JP6329482 B2 JP 6329482B2 JP 2014511877 A JP2014511877 A JP 2014511877A JP 2014511877 A JP2014511877 A JP 2014511877A JP 6329482 B2 JP6329482 B2 JP 6329482B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- plasma source
- flow rate
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/225—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
- C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3657—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having optical properties
- C03C17/366—Low-emissivity or solar control coatings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/213—SiO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/70—Properties of coatings
- C03C2217/73—Anti-reflective coatings with specific characteristics
- C03C2217/734—Anti-reflective coatings with specific characteristics comprising an alternation of high and low refractive indexes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/70—Properties of coatings
- C03C2217/78—Coatings specially designed to be durable, e.g. scratch-resistant
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/152—Deposition methods from the vapour phase by cvd
- C03C2218/153—Deposition methods from the vapour phase by cvd by plasma-enhanced cvd
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Surface Treatment Of Glass (AREA)
- Formation Of Insulating Films (AREA)
- Plasma Technology (AREA)
Description
a)基板上に前記膜を蒸着するために、AC又はパルスDC発生器に接続された少なくとも二つの電極を含む少なくとも一つの線形デュアルビームプラズマ源を含む低圧PECVD装置を用意する、
b)プラズマの電力密度がプラズマのcm2あたり5〜50Wであるように二つの電極間に電力を付与する、及び
c)プラズマ源のリニアメーターあたり100〜1000sccmの流速で金属又は半導体の酸化物、窒化物もしくは酸窒化物の膜のガス状プリカーサー、及びプラズマ源のリニアメーターあたり500〜20000sccmの流速で酸素又は酸素含有誘導体又は窒素含有誘導体に基づく反応性ガスを基板に付与する。
a)基板上に前記膜を蒸着するために、AC,DC又はパルスDC発生器に接続された少なくとも一つの電極を含む少なくとも一つの中空陰極プラズマ源を含む低圧PECVD装置を用意する、
b)プラズマの電力密度がプラズマのメーターあたり15〜100kWであるようにプラズマ源に電力を付与する、及び
c)プラズマ源のリニアメーターあたり100〜1000sccmの流速で金属又は半導体の酸化物、窒化物もしくは酸窒化物の膜のガス状プリカーサー、及びプラズマ源のリニアメーターあたり500〜20000sccmの流速で酸素又は酸素含有誘導体又は窒素含有誘導体に基づく反応性ガスを基板に付与する。
Claims (12)
- PECVD法によって移動するガラス基板上に酸化ケイ素の膜を製造するための方法であって、以下の工程を含むことを特徴とする方法:
a)基板上に前記膜を蒸着するために、AC又はパルスDC発生器に接続された少なくとも二つの電極を含む少なくとも一つの線形デュアルビームプラズマ源を含む低圧PECVD装置を用意する、ただし、前記電極はそれぞれ、空洞を含み、この空洞の中で放電が生じる、
b)開口を介して基板の方向にプラズマ源から外に追い出されるプラズマの電力密度がプラズマのcm2あたり5〜50Wであるように二つの電極間に電力を付与する、及び
c)プラズマ源のリニアメーターあたり400sccmより小さい流速で酸化ケイ素の膜のガス状プリカーサー、及びプラズマ源のリニアメーターあたり500〜20000sccmの流速で酸素に基づく反応性ガスを、PECVD装置の下で移動している基板に付与する、ただし、ガス状プリカーサーは、テトラメチルジシロキサンであり、ガス状プリカーサーは、プラズマ源に沿って均一にプラズマ中に注入され、
ガス状プリカーサーの流速に対する反応性ガスの流速の比率が少なくとも5であり、
蒸着の速度が400nm・m/分より小さく、
電極は空洞中の少なくとも一つのマグネトロン放電に耐えることができ、
それぞれの空洞は、空洞中に反応性ガスを導入することを可能にするパイプに接続されており、
プラズマ源は一連の磁石を含み、それらは互いに面し、空洞に沿って並び、これらの磁石は、放電が起こる空洞に磁界ゼロポイントを作るように位置される。 - PECVD法によって移動するガラス基板上に酸化ケイ素の膜を製造するための方法であって、以下の工程を含むことを特徴とする方法:
a)少なくとも一つの中空陰極プラズマ源を含む低圧PECVD装置を用意する、ただし、プラズマ源は、基板上に前記膜を蒸着するために、AC,DC又はパルスDC発生器に接続された二つの電極を形成する二つの空洞を含み、これらの空洞の中で放電が生じ、プラズマ源は、開口を含み、これらの開口から基板の方向にプラズマが追い出され、
b)プラズマの電力密度がプラズマのメーターあたり15〜100kWであるようにプラズマ源に電力を付与する、及び
c)プラズマ源のリニアメーターあたり400sccmより小さい流速で酸化ケイ素の膜のガス状プリカーサー、及びプラズマ源のリニアメーターあたり500〜20000sccmの流速で酸素に基づく反応性ガスを、PECVD装置の下で移動している基板に付与する、ただし、ガス状プリカーサーは、テトラメチルジシロキサンであり、ガス状プリカーサーは、プラズマ源に沿って均一にプラズマ中に注入され、
ガス状プリカーサーの流速に対する反応性ガスの流速の比率が少なくとも5であり、
蒸着の速度が400nm・m/分より小さく、
与えられた開口は、一列以上の出口穴又は一つ以上の長手方向スリットの中から選択され、
それぞれの空洞は、空洞中に反応性ガスを導入することを可能にするパイプに接続されている。 - 工程a)において、PECVD装置のプラズマ源が長さ250mm〜4000mm及び幅100〜800mmの寸法を示し、プラズマ源のリニアメーターあたり5kW〜50kWの電力を与える、請求項1に記載の方法。
- 工程a)において、圧力が0.001〜0.5Torrである、請求項1〜3のいずれかに記載の方法。
- 工程a)において、AC又はパルスDC発生器の周波数が5〜150kHzである、請求項1〜4のいずれかに記載の方法。
- ガス状プリカーサーの流速に対する反応性ガスの流速の比率が少なくとも10である、請求項1〜5のいずれかに記載の方法。
- PECVD装置の圧力が3〜20mTorrであり、反応性ガスとして純酸素が使用されている、請求項1〜6のいずれかに記載の方法。
- Low−E層を含む太陽光用途のために意図された積み重ねにおけるヘーズ値の制御のために、ガラス基板上に直接、又は他の層とのあらゆる位置での積み重ねでもしくは積み重ねの最外層として蒸着されたSiO2層の製造のための請求項1〜6のいずれかに記載の方法であって、前記ヘーズ値が少なくとも5%であり、前記方法が、線形デュアルビームプラズマ源に対してプラズマのcm2あたり最大10Wの電力密度で、又は中空陰極プラズマ源に対してプラズマのメーターあたり最大20kWの電力密度で実施される、方法。
- Low−E層を含む太陽光用途のために意図された積み重ねにおけるヘーズ値の制御のために、ガラス基板上に直接、又は他の層とのあらゆる位置での積み重ねでもしくは積み重ねの最外層として蒸着されたSiO2層の製造のための請求項1〜6のいずれかに記載の方法であって、前記ヘーズ値が0.5%より小さく、圧力が5mTorrより大きく、ガス状プリカーサーの流速に対する酸素の流速の比率が15より大きい、方法。
- 被覆又は非被覆基板に耐引掻性を与える目的で、ガラス基板上に直接、又は積み重ねの最外層として蒸着されたSiO 2 層の製造のための請求項1〜6のいずれかに記載の方法であって、前記方法において電力密度が、線形デュアルビームプラズマ源に対してプラズマのcm2あたり10〜40Wであり、または中空陰極プラズマ源に対してプラズマのメーターあたり20〜50kWであり、圧力が10mTorrより小さく、ガス状プリカーサーの流速に対する酸素の流速の比率が10より大きい、方法。
- 反射防止(AR)特性を示すガラス基板上の積み重ねの製造のための請求項1〜6のいずれかに記載の方法であって、前記積み重ねが高屈折率の層と低屈折率の層の連続を含み、前記方法において電力密度が、線形デュアルビームプラズマ源に対してプラズマのcm2あたり10〜40Wであり、または中空陰極プラズマ源に対してプラズマのメーターあたり20〜50kWであり、圧力が20mTorrより小さい、方法。
- Low−E層で被覆されたガラス基板上に蒸着された透明SiO2層の製造のための請求項1〜6のいずれかに記載の方法であって、圧力が20mTorrより小さく、蒸着の速度が200nm・m/分より小さい、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BEBE2011/0322 | 2011-05-25 | ||
BE2011/0322A BE1019991A3 (fr) | 2011-05-25 | 2011-05-25 | Procede de depot de couches sur un substrat verrier par pecvd a faible pression. |
PCT/EP2012/059734 WO2012160145A1 (fr) | 2011-05-25 | 2012-05-24 | Procede de depot de couches sur un substrat verrier par pecvd a faible pression |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016234708A Division JP2017095801A (ja) | 2011-05-25 | 2016-12-02 | 低圧pecvdによってガラス基板上に層を蒸着するための方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014518947A JP2014518947A (ja) | 2014-08-07 |
JP6329482B2 true JP6329482B2 (ja) | 2018-05-23 |
Family
ID=46149481
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014511877A Active JP6329482B2 (ja) | 2011-05-25 | 2012-05-24 | 低圧pecvdによってガラス基板上に層を蒸着するための方法 |
JP2016234708A Pending JP2017095801A (ja) | 2011-05-25 | 2016-12-02 | 低圧pecvdによってガラス基板上に層を蒸着するための方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016234708A Pending JP2017095801A (ja) | 2011-05-25 | 2016-12-02 | 低圧pecvdによってガラス基板上に層を蒸着するための方法 |
Country Status (12)
Country | Link |
---|---|
US (1) | US9533914B2 (ja) |
EP (1) | EP2714961B1 (ja) |
JP (2) | JP6329482B2 (ja) |
BE (1) | BE1019991A3 (ja) |
BR (1) | BR112013030195B1 (ja) |
EA (1) | EA026577B1 (ja) |
ES (1) | ES2724224T3 (ja) |
HU (1) | HUE042369T2 (ja) |
MY (1) | MY170051A (ja) |
PL (1) | PL2714961T3 (ja) |
TR (1) | TR201904573T4 (ja) |
WO (1) | WO2012160145A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI641292B (zh) | 2008-08-04 | 2018-11-11 | Agc北美平面玻璃公司 | 電漿源 |
SG11201509416YA (en) | 2013-05-30 | 2015-12-30 | Agc Glass Europe | Solar control glazing |
MX2017007356A (es) * | 2014-12-05 | 2018-04-11 | Agc Flat Glass Europe S A | Fuente de plasma del catodo hueco. |
JP6508746B2 (ja) | 2014-12-05 | 2019-05-08 | エージーシー フラット グラス ノース アメリカ,インコーポレイテッドAgc Flat Glass North America,Inc. | マクロ粒子低減コーティングを利用したプラズマ源ならびにマクロ粒子低減コーティングを用いたプラズマ源を薄膜コーティングおよび表面改質に使用する方法 |
JP2018028109A (ja) * | 2014-12-22 | 2018-02-22 | 旭硝子株式会社 | プラズマcvd装置 |
US10919799B2 (en) | 2015-08-21 | 2021-02-16 | Corning Incorporated | Methods and apparatus for processing glass |
US9721765B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Plasma device driven by multiple-phase alternating or pulsed electrical current |
US10573499B2 (en) | 2015-12-18 | 2020-02-25 | Agc Flat Glass North America, Inc. | Method of extracting and accelerating ions |
US10242846B2 (en) | 2015-12-18 | 2019-03-26 | Agc Flat Glass North America, Inc. | Hollow cathode ion source |
MX2018007547A (es) * | 2015-12-18 | 2019-05-09 | Agc Flat Glass Na Inc | Fuente de iones de catodo hueco y metodo de extraer y acelerar iones. |
BR102016016715B1 (pt) * | 2016-07-19 | 2022-05-03 | Universidade Federal De Santa Catarina | Processo de revestimento de componente condutor e revestimento de componente condutor |
IT201800001111A1 (it) * | 2018-01-16 | 2019-07-16 | St Microelectronics Srl | Struttura micromeccanica di specchio con migliorate caratteristiche meccaniche e di riflettivita' e relativo procedimento di fabbricazione |
JP2020047591A (ja) * | 2019-11-25 | 2020-03-26 | エージーシー ガラス ヨーロッパ | 中空陰極プラズマ源 |
CN114829670A (zh) * | 2019-12-19 | 2022-07-29 | 旭硝子欧洲玻璃公司 | 氧化硅涂覆的聚合物膜以及用于生产其的低压pecvd方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1170611A (ja) * | 1997-08-29 | 1999-03-16 | Toppan Printing Co Ltd | 透明ガスバリアフィルム |
US7411352B2 (en) | 2002-09-19 | 2008-08-12 | Applied Process Technologies, Inc. | Dual plasma beam sources and method |
US20070221128A1 (en) * | 2006-03-23 | 2007-09-27 | Soo Young Choi | Method and apparatus for improving uniformity of large-area substrates |
US8241713B2 (en) * | 2007-02-21 | 2012-08-14 | 3M Innovative Properties Company | Moisture barrier coatings for organic light emitting diode devices |
JP5139894B2 (ja) * | 2008-06-20 | 2013-02-06 | 富士フイルム株式会社 | ガスバリア膜の形成方法およびガスバリア膜 |
TWI641292B (zh) * | 2008-08-04 | 2018-11-11 | Agc北美平面玻璃公司 | 電漿源 |
JP5201100B2 (ja) * | 2008-11-05 | 2013-06-05 | トヨタ車体株式会社 | 車椅子吊り装置 |
KR20120023655A (ko) * | 2009-05-15 | 2012-03-13 | 가부시키가이샤 시마쓰세사쿠쇼 | 표면파 플라즈마 cvd 장치 및 성막 방법 |
JP2013503974A (ja) * | 2009-09-05 | 2013-02-04 | ジェネラル・プラズマ・インコーポレーテッド | プラズマ化学気相成長装置 |
-
2011
- 2011-05-25 BE BE2011/0322A patent/BE1019991A3/fr not_active IP Right Cessation
-
2012
- 2012-05-24 ES ES12723492T patent/ES2724224T3/es active Active
- 2012-05-24 JP JP2014511877A patent/JP6329482B2/ja active Active
- 2012-05-24 BR BR112013030195-3A patent/BR112013030195B1/pt active IP Right Grant
- 2012-05-24 PL PL12723492T patent/PL2714961T3/pl unknown
- 2012-05-24 EP EP12723492.0A patent/EP2714961B1/fr active Active
- 2012-05-24 MY MYPI2013004172A patent/MY170051A/en unknown
- 2012-05-24 US US14/122,111 patent/US9533914B2/en active Active
- 2012-05-24 WO PCT/EP2012/059734 patent/WO2012160145A1/fr active Application Filing
- 2012-05-24 TR TR2019/04573T patent/TR201904573T4/tr unknown
- 2012-05-24 EA EA201391765A patent/EA026577B1/ru not_active IP Right Cessation
- 2012-05-24 HU HUE12723492A patent/HUE042369T2/hu unknown
-
2016
- 2016-12-02 JP JP2016234708A patent/JP2017095801A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
PL2714961T3 (pl) | 2019-07-31 |
US9533914B2 (en) | 2017-01-03 |
JP2014518947A (ja) | 2014-08-07 |
EA026577B1 (ru) | 2017-04-28 |
JP2017095801A (ja) | 2017-06-01 |
EP2714961B1 (fr) | 2019-01-02 |
BR112013030195B1 (pt) | 2020-10-27 |
EP2714961A1 (fr) | 2014-04-09 |
HUE042369T2 (hu) | 2019-06-28 |
ES2724224T3 (es) | 2019-09-09 |
BE1019991A3 (fr) | 2013-03-05 |
EA201391765A1 (ru) | 2014-04-30 |
BR112013030195A2 (pt) | 2016-12-06 |
WO2012160145A1 (fr) | 2012-11-29 |
TR201904573T4 (tr) | 2019-04-22 |
US20140099451A1 (en) | 2014-04-10 |
MY170051A (en) | 2019-07-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6329482B2 (ja) | 低圧pecvdによってガラス基板上に層を蒸着するための方法 | |
JP6107819B2 (ja) | ガスバリア性フィルム、およびこれを用いる電子デバイス | |
JP5170268B2 (ja) | 透明ガスバリア性フィルムの製造方法 | |
US7597940B2 (en) | Methods for preparing titania coatings by plasma CVD at atmospheric pressure | |
JP5716663B2 (ja) | 防汚性積層体 | |
TW201313946A (zh) | 藉由大氣壓化學氣相沉積來沉積氧化矽 | |
Kim et al. | Surface modification of polymeric substrates to enhance the barrier properties of an Al2O3 layer formed by PEALD process | |
JP2023507602A (ja) | 酸化ケイ素被覆ポリマーフィルム及びそれを製造するための低圧pecvd方法 | |
US20130029123A1 (en) | Tin oxide deposited by linear plasma enhanced chemical vapor deposition | |
Junghähnel et al. | Thin‐Film Deposition on Flexible Glass by Plasma Processes | |
JP2004011014A (ja) | 金属原子含有膜、金属原子含有膜材料及び金属原子含有膜の形成方法 | |
JP6277883B2 (ja) | ガスバリアー性フィルムの製造方法及び製造装置 | |
JP2008062561A (ja) | 親水性積層膜を備えた物品の製造方法、および、親水性積層膜を備えた物品 | |
JP2003303520A (ja) | 透明導電膜積層体及びその製造方法並びに該透明導電膜積層体を用いた物品 | |
KR101334725B1 (ko) | 터치 스크린 패널용 투명 도전성 필름 및 그 제조방법 | |
JP2004063453A (ja) | 透明導電膜積層体及びその形成方法 | |
CN113366141A (zh) | 用于金属涂层的方法 | |
JP6888623B2 (ja) | ガスバリア性フィルムの製造方法 | |
KR101644038B1 (ko) | 투명 도전성 필름, 이의 제조 방법 및 이를 포함하는 터치패널 | |
WO2024028173A1 (en) | Boron doped silicon oxide protective layer and method for making the same | |
WO2024028174A1 (en) | Decoratively coated polymer substrates and process for obtaining the same | |
JP2016113698A (ja) | 耐引掻特性を有する透明な多層系の堆積方法 | |
KR101541255B1 (ko) | 알루미늄 금속층위에 hmdso층 및 af층이 함께 형성되는 코팅방법 | |
WO2015061484A1 (en) | Multiple layer anti-reflective coating |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150227 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20151214 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151218 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160310 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20160805 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161202 Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20161202 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20161209 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20170113 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171221 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180223 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180420 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6329482 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |