JP6322130B2 - 半導体装置、その製造方法、それを用いた電力変換装置 - Google Patents

半導体装置、その製造方法、それを用いた電力変換装置 Download PDF

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Publication number
JP6322130B2
JP6322130B2 JP2014259753A JP2014259753A JP6322130B2 JP 6322130 B2 JP6322130 B2 JP 6322130B2 JP 2014259753 A JP2014259753 A JP 2014259753A JP 2014259753 A JP2014259753 A JP 2014259753A JP 6322130 B2 JP6322130 B2 JP 6322130B2
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layer
electrode
electrode layer
interlayer film
anode electrode
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JP2014259753A
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Japanese (ja)
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JP2016119434A5 (https=
JP2016119434A (ja
Inventor
昌弘 増永
昌弘 増永
大夏 新井
大夏 新井
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Hitachi Ltd
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Hitachi Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

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  • Electrodes Of Semiconductors (AREA)
JP2014259753A 2014-12-24 2014-12-24 半導体装置、その製造方法、それを用いた電力変換装置 Expired - Fee Related JP6322130B2 (ja)

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JP2014259753A JP6322130B2 (ja) 2014-12-24 2014-12-24 半導体装置、その製造方法、それを用いた電力変換装置

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Application Number Priority Date Filing Date Title
JP2014259753A JP6322130B2 (ja) 2014-12-24 2014-12-24 半導体装置、その製造方法、それを用いた電力変換装置

Publications (3)

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JP2016119434A JP2016119434A (ja) 2016-06-30
JP2016119434A5 JP2016119434A5 (https=) 2017-04-13
JP6322130B2 true JP6322130B2 (ja) 2018-05-09

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JP2014259753A Expired - Fee Related JP6322130B2 (ja) 2014-12-24 2014-12-24 半導体装置、その製造方法、それを用いた電力変換装置

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6964538B2 (ja) * 2018-02-28 2021-11-10 株式会社 日立パワーデバイス 半導体装置および電力変換装置
JP7835974B2 (ja) * 2021-12-13 2026-03-26 ミネベアパワーデバイス株式会社 半導体装置および電力変換装置
JP2023144467A (ja) * 2022-03-28 2023-10-11 株式会社 日立パワーデバイス 半導体装置および電力変換装置
JP2023147422A (ja) * 2022-03-30 2023-10-13 株式会社 日立パワーデバイス 半導体装置および電力変換装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000114525A (ja) * 1998-08-03 2000-04-21 Fuji Electric Co Ltd 半導体装置およびその製造方法
JP6072432B2 (ja) * 2012-05-15 2017-02-01 三菱電機株式会社 半導体装置及びその製造方法

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