JP6317124B2 - ヘテロ接合相互嵌合型バックコンタクト光起電力電池の製造方法 - Google Patents

ヘテロ接合相互嵌合型バックコンタクト光起電力電池の製造方法 Download PDF

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JP6317124B2
JP6317124B2 JP2014025472A JP2014025472A JP6317124B2 JP 6317124 B2 JP6317124 B2 JP 6317124B2 JP 2014025472 A JP2014025472 A JP 2014025472A JP 2014025472 A JP2014025472 A JP 2014025472A JP 6317124 B2 JP6317124 B2 JP 6317124B2
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バリー・オサリバン
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Interuniversitair Microelektronica Centrum vzw IMEC
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    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
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    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
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    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
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    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/70—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising bypass diodes
    • H10F19/75—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising bypass diodes the bypass diodes being integrated or directly associated with the photovoltaic cells, e.g. formed in or on the same substrate
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    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/908—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells for back-contact photovoltaic cells
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    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
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    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
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    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H10F77/227—Arrangements for electrodes of back-contact photovoltaic cells for emitter wrap-through [EWT] photovoltaic cells, e.g. interdigitated emitter-base back-contacts
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    • H10F77/30—Coatings
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02E10/00—Energy generation through renewable energy sources
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    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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JP2014025472A 2013-03-19 2014-02-13 ヘテロ接合相互嵌合型バックコンタクト光起電力電池の製造方法 Active JP6317124B2 (ja)

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KR101613843B1 (ko) * 2013-04-23 2016-04-20 엘지전자 주식회사 태양 전지 및 이의 제조 방법
JP2016143721A (ja) * 2015-01-30 2016-08-08 シャープ株式会社 光電変換素子および光電変換素子の製造方法
JP6352894B2 (ja) * 2015-12-24 2018-07-04 トヨタ自動車株式会社 太陽電池モジュール
US10749052B2 (en) 2017-02-14 2020-08-18 Alliance For Sustainable Energy, Llc Methods of forming interdigitated back contact solar cells
NL2018491B1 (en) * 2017-03-09 2018-09-21 Univ Delft Tech Mask-less patterning of amorphous silicon layers for low-cost silicon hetero-junction interdigitated back-contact solar cells
CN107068798B (zh) * 2017-03-15 2019-05-17 深圳市科纳能薄膜科技有限公司 背接触异质结太阳能电池及其制作方法
US10714652B2 (en) * 2017-06-21 2020-07-14 Alliance For Sustainable Energy, Llc Methods of forming interdigitated back contact layers
EP3770975B1 (en) * 2019-07-26 2021-11-24 Meyer Burger (Germany) GmbH Photovoltaic device and method for manufacturing the same
CN115000194A (zh) * 2022-05-26 2022-09-02 普乐新能源科技(徐州)有限公司 一种简易低成本的p型晶硅ibc太阳能电池及其制备方法
CN115050856B (zh) * 2022-06-23 2024-10-25 苏州迈为科技股份有限公司 异质结太阳能电池及其制备方法
CN115207137B (zh) 2022-09-16 2023-02-17 金阳(泉州)新能源科技有限公司 一种联合钝化背接触电池及其制备方法
CN115312633B (zh) 2022-10-11 2023-02-17 金阳(泉州)新能源科技有限公司 一种无掩膜层联合钝化背接触电池及其制备方法
CN115995500A (zh) * 2022-10-28 2023-04-21 天合光能股份有限公司 太阳能电池及其制备方法
CN117374169B (zh) 2023-12-07 2024-03-12 浙江晶科能源有限公司 背接触太阳能电池的制备方法及背接触太阳能电池
CN117577709B (zh) * 2024-01-19 2024-03-29 金阳(泉州)新能源科技有限公司 一种联合钝化背接触电池及其制备方法和电池组件
CN117637875A (zh) * 2024-01-26 2024-03-01 隆基绿能科技股份有限公司 一种背接触电池及其制造方法
CN118173662B (zh) * 2024-03-14 2024-10-01 国电投新能源科技有限公司 一种背接触异质结太阳电池的制备方法
CN118352415B (zh) * 2024-06-14 2024-08-13 苏州晨晖智能设备有限公司 一种集成续流二极管的光伏电池及其制造方法和光伏组件

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JP2014183312A (ja) 2014-09-29
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US20140295613A1 (en) 2014-10-02
US9337380B2 (en) 2016-05-10

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