JP2014183312A5 - - Google Patents
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- JP2014183312A5 JP2014183312A5 JP2014025472A JP2014025472A JP2014183312A5 JP 2014183312 A5 JP2014183312 A5 JP 2014183312A5 JP 2014025472 A JP2014025472 A JP 2014025472A JP 2014025472 A JP2014025472 A JP 2014025472A JP 2014183312 A5 JP2014183312 A5 JP 2014183312A5
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- JP
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- Prior art keywords
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 158
- 238000000034 method Methods 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 47
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 38
- 238000005530 etching Methods 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 230000000873 masking effect Effects 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 7
- 239000000243 solution Substances 0.000 description 11
- 238000002955 isolation Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241001600072 Hydroides Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP13159878.1 | 2013-03-19 | ||
| EP13159878 | 2013-03-19 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014183312A JP2014183312A (ja) | 2014-09-29 |
| JP2014183312A5 true JP2014183312A5 (enExample) | 2018-03-29 |
| JP6317124B2 JP6317124B2 (ja) | 2018-04-25 |
Family
ID=47900921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014025472A Active JP6317124B2 (ja) | 2013-03-19 | 2014-02-13 | ヘテロ接合相互嵌合型バックコンタクト光起電力電池の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9337380B2 (enExample) |
| EP (1) | EP2782144B1 (enExample) |
| JP (1) | JP6317124B2 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101613843B1 (ko) * | 2013-04-23 | 2016-04-20 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| JP2016143721A (ja) * | 2015-01-30 | 2016-08-08 | シャープ株式会社 | 光電変換素子および光電変換素子の製造方法 |
| JP6352894B2 (ja) * | 2015-12-24 | 2018-07-04 | トヨタ自動車株式会社 | 太陽電池モジュール |
| US10749052B2 (en) | 2017-02-14 | 2020-08-18 | Alliance For Sustainable Energy, Llc | Methods of forming interdigitated back contact solar cells |
| NL2018491B1 (en) * | 2017-03-09 | 2018-09-21 | Univ Delft Tech | Mask-less patterning of amorphous silicon layers for low-cost silicon hetero-junction interdigitated back-contact solar cells |
| CN107068798B (zh) * | 2017-03-15 | 2019-05-17 | 深圳市科纳能薄膜科技有限公司 | 背接触异质结太阳能电池及其制作方法 |
| US10714652B2 (en) * | 2017-06-21 | 2020-07-14 | Alliance For Sustainable Energy, Llc | Methods of forming interdigitated back contact layers |
| EP3770975B1 (en) * | 2019-07-26 | 2021-11-24 | Meyer Burger (Germany) GmbH | Photovoltaic device and method for manufacturing the same |
| CN115000194A (zh) * | 2022-05-26 | 2022-09-02 | 普乐新能源科技(徐州)有限公司 | 一种简易低成本的p型晶硅ibc太阳能电池及其制备方法 |
| CN115050856B (zh) * | 2022-06-23 | 2024-10-25 | 苏州迈为科技股份有限公司 | 异质结太阳能电池及其制备方法 |
| CN115207137B (zh) | 2022-09-16 | 2023-02-17 | 金阳(泉州)新能源科技有限公司 | 一种联合钝化背接触电池及其制备方法 |
| CN115312633B (zh) | 2022-10-11 | 2023-02-17 | 金阳(泉州)新能源科技有限公司 | 一种无掩膜层联合钝化背接触电池及其制备方法 |
| CN115995500A (zh) * | 2022-10-28 | 2023-04-21 | 天合光能股份有限公司 | 太阳能电池及其制备方法 |
| CN117374169B (zh) | 2023-12-07 | 2024-03-12 | 浙江晶科能源有限公司 | 背接触太阳能电池的制备方法及背接触太阳能电池 |
| CN117577709B (zh) * | 2024-01-19 | 2024-03-29 | 金阳(泉州)新能源科技有限公司 | 一种联合钝化背接触电池及其制备方法和电池组件 |
| CN117637875A (zh) * | 2024-01-26 | 2024-03-01 | 隆基绿能科技股份有限公司 | 一种背接触电池及其制造方法 |
| CN118173662B (zh) * | 2024-03-14 | 2024-10-01 | 国电投新能源科技有限公司 | 一种背接触异质结太阳电池的制备方法 |
| CN118352415B (zh) * | 2024-06-14 | 2024-08-13 | 苏州晨晖智能设备有限公司 | 一种集成续流二极管的光伏电池及其制造方法和光伏组件 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2372904A1 (fr) * | 1976-11-19 | 1978-06-30 | Ibm | Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application |
| US5431777A (en) | 1992-09-17 | 1995-07-11 | International Business Machines Corporation | Methods and compositions for the selective etching of silicon |
| US6309975B1 (en) * | 1997-03-14 | 2001-10-30 | Micron Technology, Inc. | Methods of making implanted structures |
| JP3255228B2 (ja) | 1998-03-30 | 2002-02-12 | 日本電気株式会社 | 半導体装置の製造方法 |
| US7737357B2 (en) | 2006-05-04 | 2010-06-15 | Sunpower Corporation | Solar cell having doped semiconductor heterojunction contacts |
| US20090293948A1 (en) | 2008-05-28 | 2009-12-03 | Stichting Energieonderzoek Centrum Nederland | Method of manufacturing an amorphous/crystalline silicon heterojunction solar cell |
| US7951637B2 (en) * | 2008-08-27 | 2011-05-31 | Applied Materials, Inc. | Back contact solar cells using printed dielectric barrier |
| US20100243042A1 (en) * | 2009-03-24 | 2010-09-30 | JA Development Co., Ltd. | High-efficiency photovoltaic cells |
| JP5334926B2 (ja) * | 2010-08-02 | 2013-11-06 | 三洋電機株式会社 | 太陽電池の製造方法 |
| CN103283033B (zh) * | 2010-12-29 | 2015-09-30 | 三洋电机株式会社 | 太阳能电池的制造方法和太阳能电池 |
| WO2012132835A1 (ja) * | 2011-03-25 | 2012-10-04 | 三洋電機株式会社 | 太陽電池 |
| WO2012132758A1 (ja) * | 2011-03-28 | 2012-10-04 | 三洋電機株式会社 | 光電変換装置及び光電変換装置の製造方法 |
| US9105769B2 (en) * | 2013-09-12 | 2015-08-11 | International Business Machines Corporation | Shallow junction photovoltaic devices |
-
2014
- 2014-01-31 EP EP14153401.6A patent/EP2782144B1/en active Active
- 2014-02-13 JP JP2014025472A patent/JP6317124B2/ja active Active
- 2014-03-18 US US14/218,416 patent/US9337380B2/en active Active
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