JP6310653B2 - Cu配線構造の形成方法 - Google Patents
Cu配線構造の形成方法 Download PDFInfo
- Publication number
- JP6310653B2 JP6310653B2 JP2013143073A JP2013143073A JP6310653B2 JP 6310653 B2 JP6310653 B2 JP 6310653B2 JP 2013143073 A JP2013143073 A JP 2013143073A JP 2013143073 A JP2013143073 A JP 2013143073A JP 6310653 B2 JP6310653 B2 JP 6310653B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- forming
- substrate
- vacuum processing
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 21
- 238000012545 processing Methods 0.000 claims description 37
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 26
- 229910052799 carbon Inorganic materials 0.000 claims description 26
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 124
- 239000000758 substrate Substances 0.000 description 35
- 239000012530 fluid Substances 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 13
- 238000000137 annealing Methods 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000007872 degassing Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000000921 elemental analysis Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- -1 pentadienyl group Chemical group 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
Claims (2)
- 処理対象物を表面に凹部が形成されたものとし、この凹部の内面を含む処理対象物表面に、炭素が含まれるCo層を形成する工程と、
Co層を緻密化する工程と、
緻密化したCo層の表面にCu層を形成し、Cu層をリフローにより流動させて凹部内にCuを埋め込む工程とを含み、
前記Co層を形成する工程におけるCo層の成膜温度は、280℃以下の範囲であり、
前記Co層を緻密化する工程は、Co層中の炭素濃度を5E+20atoms/cm3以上1E+21atoms/cm3以下にする280℃以下の還元ガス雰囲気下での加熱を含むことを特徴とするCu配線構造の形成方法。 - 前記Co層は2.5nm以下の厚さで形成されることを特徴とする請求項1記載のCu配線構造の形成方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013143073A JP6310653B2 (ja) | 2013-07-08 | 2013-07-08 | Cu配線構造の形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013143073A JP6310653B2 (ja) | 2013-07-08 | 2013-07-08 | Cu配線構造の形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015018839A JP2015018839A (ja) | 2015-01-29 |
JP6310653B2 true JP6310653B2 (ja) | 2018-04-11 |
Family
ID=52439618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013143073A Active JP6310653B2 (ja) | 2013-07-08 | 2013-07-08 | Cu配線構造の形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6310653B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6975584B2 (ja) * | 2017-09-07 | 2021-12-01 | 東京エレクトロン株式会社 | 半導体装置 |
US11421318B2 (en) * | 2018-05-04 | 2022-08-23 | Applied Materials, Inc. | Methods and apparatus for high reflectivity aluminum layers |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9051641B2 (en) * | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
JP2009105289A (ja) * | 2007-10-24 | 2009-05-14 | Tokyo Electron Ltd | Cu配線の形成方法 |
JP5680892B2 (ja) * | 2010-07-13 | 2015-03-04 | 株式会社アルバック | Co膜形成方法 |
-
2013
- 2013-07-08 JP JP2013143073A patent/JP6310653B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2015018839A (ja) | 2015-01-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI680535B (zh) | 金屬及含金屬化合物之氧化體積膨脹 | |
CN110476239B (zh) | 使用反应性退火的间隙填充 | |
TWI443775B (zh) | 半導體構造及於開口內提供導電材料之方法 | |
CN110476222B (zh) | 用于硅间隙填充的两步工艺 | |
TWI694501B (zh) | 防止銅擴散的介電/金屬阻障集成 | |
JP3606095B2 (ja) | 半導体装置の製造方法 | |
US9318383B2 (en) | Integrated cluster to enable next generation interconnect | |
TW201816162A (zh) | 釕(Ru)配線及該釕配線的製造方法 | |
US20230045689A1 (en) | Method of forming interconnect for semiconductor device | |
JP6310653B2 (ja) | Cu配線構造の形成方法 | |
US8906806B2 (en) | Method of manufacturing semiconductor device | |
US10950500B2 (en) | Methods and apparatus for filling a feature disposed in a substrate | |
KR102017944B1 (ko) | 니켈 배선의 제조 방법 | |
JP2006245240A (ja) | 半導体装置及びその製造方法 | |
JP2001007049A (ja) | 半導体集積回路装置の製造方法およびその製造装置 | |
JP2014086537A (ja) | Cu層形成方法及び半導体装置の製造方法 | |
TWI683919B (zh) | Cu膜之形成方法 | |
JP5965628B2 (ja) | Cu層形成方法及び半導体装置の製造方法 | |
JP5794905B2 (ja) | リフロー法及び半導体装置の製造方法 | |
JPH05291177A (ja) | 半導体装置の製造方法 | |
TWI409880B (zh) | 一種用來製造半導體裝置的方法 | |
TW202333223A (zh) | 用於氧化鎢移除之氟化鎢浸泡及處理 | |
JP5640448B2 (ja) | 半導体装置の製造方法 | |
JP2005260105A (ja) | 半導体装置及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160527 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170321 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170323 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170519 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170905 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20171106 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180104 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180306 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180319 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6310653 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |