JP6308727B2 - 電子デバイスの製造方法 - Google Patents

電子デバイスの製造方法 Download PDF

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Publication number
JP6308727B2
JP6308727B2 JP2013124598A JP2013124598A JP6308727B2 JP 6308727 B2 JP6308727 B2 JP 6308727B2 JP 2013124598 A JP2013124598 A JP 2013124598A JP 2013124598 A JP2013124598 A JP 2013124598A JP 6308727 B2 JP6308727 B2 JP 6308727B2
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Japan
Prior art keywords
insulator layer
layer
insulator
plasma etching
gas
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Expired - Fee Related
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JP2013124598A
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English (en)
Japanese (ja)
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JP2015002193A (ja
JP2015002193A5 (enExample
Inventor
北村　慎吾
慎吾 北村
愛子 加藤
愛子 加藤
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2013124598A priority Critical patent/JP6308727B2/ja
Priority to US14/300,096 priority patent/US9530664B2/en
Publication of JP2015002193A publication Critical patent/JP2015002193A/ja
Publication of JP2015002193A5 publication Critical patent/JP2015002193A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0234—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes that stop on pads or on electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0242—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes from the back sides of the chips, wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0253—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising forming the through-semiconductor vias after stacking of the chips, wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/213—Cross-sectional shapes or dispositions
    • H10W20/2134—TSVs extending from the semiconductor wafer into back-end-of-line layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/082—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2013124598A 2013-06-13 2013-06-13 電子デバイスの製造方法 Expired - Fee Related JP6308727B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013124598A JP6308727B2 (ja) 2013-06-13 2013-06-13 電子デバイスの製造方法
US14/300,096 US9530664B2 (en) 2013-06-13 2014-06-09 Method for manufacturing electronic device by forming a hole in a multilayer insulator film by plasma etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013124598A JP6308727B2 (ja) 2013-06-13 2013-06-13 電子デバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2015002193A JP2015002193A (ja) 2015-01-05
JP2015002193A5 JP2015002193A5 (enExample) 2016-07-28
JP6308727B2 true JP6308727B2 (ja) 2018-04-11

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US (1) US9530664B2 (enExample)
JP (1) JP6308727B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5595524B2 (ja) * 2010-12-28 2014-09-24 京セラ株式会社 光モジュールおよび光配線基板
US9443731B1 (en) * 2015-02-20 2016-09-13 Tokyo Electron Limited Material processing to achieve sub-10nm patterning
JP6545608B2 (ja) * 2015-11-30 2019-07-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2018011278A (ja) * 2016-07-15 2018-01-18 株式会社ニコン 撮像装置
JP6805088B2 (ja) * 2017-06-15 2020-12-23 日本電信電話株式会社 光導波路およびその製造方法
JP7523904B2 (ja) 2019-12-27 2024-07-29 キヤノン株式会社 検査装置および半導体装置の製造方法
CN111175982B (zh) * 2020-02-24 2023-01-17 京东方科技集团股份有限公司 近眼显示装置和可穿戴设备
JP2021158320A (ja) * 2020-03-30 2021-10-07 キヤノン株式会社 半導体装置及びその製造方法、機器
CN118969612B (zh) * 2024-10-17 2025-03-25 浙江广芯微电子有限公司 一种沟槽肖特基结构的二极管柔性加工管控方法及平台

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09129595A (ja) 1995-10-26 1997-05-16 Applied Materials Inc プラズマエッチング方法
JP3781729B2 (ja) * 2003-02-26 2006-05-31 富士通株式会社 半導体装置の製造方法
JP3757213B2 (ja) * 2003-03-18 2006-03-22 富士通株式会社 半導体装置の製造方法
CN101124661A (zh) 2004-05-11 2008-02-13 应用材料公司 碳氟化合物蚀刻化学剂中使用氢气添加剂的掺碳的硅氧化物蚀刻
JP5405012B2 (ja) * 2007-11-19 2014-02-05 東京エレクトロン株式会社 プラズマエッチング方法及び記憶媒体
JP4697258B2 (ja) 2008-05-09 2011-06-08 ソニー株式会社 固体撮像装置と電子機器
JP2010212365A (ja) * 2009-03-09 2010-09-24 Sony Corp 固体撮像装置、および、その製造方法、電子機器
JP5985136B2 (ja) 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器
JP5442394B2 (ja) 2009-10-29 2014-03-12 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5640361B2 (ja) 2009-12-03 2014-12-17 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5839807B2 (ja) * 2011-02-09 2016-01-06 キヤノン株式会社 固体撮像装置の製造方法

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JP2015002193A (ja) 2015-01-05
US9530664B2 (en) 2016-12-27
US20140370710A1 (en) 2014-12-18

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