JP6306677B1 - Iii族窒化物半導体基板、及び、iii族窒化物半導体基板の製造方法 - Google Patents
Iii族窒化物半導体基板、及び、iii族窒化物半導体基板の製造方法 Download PDFInfo
- Publication number
- JP6306677B1 JP6306677B1 JP2016245357A JP2016245357A JP6306677B1 JP 6306677 B1 JP6306677 B1 JP 6306677B1 JP 2016245357 A JP2016245357 A JP 2016245357A JP 2016245357 A JP2016245357 A JP 2016245357A JP 6306677 B1 JP6306677 B1 JP 6306677B1
- Authority
- JP
- Japan
- Prior art keywords
- group iii
- nitride semiconductor
- iii nitride
- semiconductor layer
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 244
- 239000004065 semiconductor Substances 0.000 title claims abstract description 244
- 239000000758 substrate Substances 0.000 title claims abstract description 223
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 238000000034 method Methods 0.000 title abstract description 36
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 109
- 239000010980 sapphire Substances 0.000 claims abstract description 109
- 238000002360 preparation method Methods 0.000 claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 238000005121 nitriding Methods 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- 239000012159 carrier gas Substances 0.000 description 32
- 230000000052 comparative effect Effects 0.000 description 19
- 239000007789 gas Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- INZDTEICWPZYJM-UHFFFAOYSA-N 1-(chloromethyl)-4-[4-(chloromethyl)phenyl]benzene Chemical compound C1=CC(CCl)=CC=C1C1=CC=C(CCl)C=C1 INZDTEICWPZYJM-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0209—Pretreatment of the material to be coated by heating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
半極性面を主面として有するサファイア基板と、
前記主面上に位置するIII族窒化物半導体層と、
を有し、
前記主面に垂直な方向での平面視において、前記サファイア基板の<0002>方向と、前記III族窒化物半導体層の<10−10>方向とのなす角が44.5°以上45.5°以下であるIII族窒化物半導体基板が提供される。
半極性面を主面として有するサファイア基板と、前記主面上に位置するIII族窒化物半導体層と、を有し、前記主面に垂直な方向での平面視において、前記サファイア基板の<0002>方向と、前記III族窒化物半導体層の<10−10>方向とのなす角が44.5°以上45.5°以下であるIII族窒化物半導体基板を準備する準備工程と、
前記III族窒化物半導体層の上に、III族窒化物半導体をエピタキシャル成長する成長工程と、
を有するIII族窒化物半導体基板の製造方法が提供される。
主面が、{10−10}面をa面と平行になる方向に0.0°より大、10.5°以下の中のいずれかの角度で傾斜した面であるサファイア基板を準備するサファイア基板準備工程と、
窒化処理を行いながら、前記サファイア基板を加熱する加熱工程と、
前記加熱工程の後、前記サファイア基板上に、NH3は供給せず、Alを含むガスを供給する前工程と、
前記前工程の後、800℃以上950℃以下の成長温度で、前記主面上にバッファ層を形成するバッファ層形成工程と、
前記バッファ層の上に、III族窒化物半導体層を形成するIII族窒化物半導体層形成工程と、
を有するIII族窒化物半導体基板の製造方法が提供される。
圧力:50torr以上250torr以下
熱処理時間:15分
キャリアガス:H2、N2
H2(キャリアガス)供給量:8.5slm以上9.5slm以下
N2(キャリアガス)供給量:1.0slm以上2.0slm以下
NH3供給量:15slm以上20slm以下
圧力:30torr以上200torr以下
処理時間:10秒
キャリアガス:H2、N2
H2(キャリアガス)供給量:8.5slm以上9.5slm以下
N2(キャリアガス)供給量:1.0slm以上2.0slm以下
NH3供給量:0slm
前処理ガス(例:トリメチルアルミニウム)供給量:85ccm以上95ccm以下
成長温度:800℃以上950℃以下
圧力:30torr以上200torr以下
V/III比:4000以上6000以下
TMAl供給量:20ccm以上500ccm以下
NH3供給量:2.5slm以上7.5slm以下
キャリアガス:H2、N2
H2(キャリアガス)供給量:8.5slm以上9.5slm以下
N2(キャリアガス)供給量:1.0slm以上2.0slm以下
成長温度:800℃以上1025℃以下
圧力:30torr以上200torr以下
V/III比:200以上500以下
TMGa供給量:50ccm以上1000ccm以下
NH3供給量:9.0slm以上11.0slm以下
キャリアガス:H2、N2
H2(キャリアガス)供給量:13.0slm以上14.0slm以下
N2(キャリアガス)供給量:1.0slm以上2.0slm以下
実施例1、比較例1及び比較例2各々に対応するテンプレートIII族窒化物半導体基板を準備した。
半極性面を主面として有するサファイア基板と、当該主面上に位置するIII族窒化物半導体層と、を有し、当該主面に垂直な方向での平面視において、サファイア基板の<0002>方向と、III族窒化物半導体層の<10−10>方向とは「直交しない」テンプレートIII族窒化物半導体基板を準備した。具体的には、以下のようにして、III族窒化物半導体基板を製造した。
厚さ:430μm
直径:2インチ
圧力:200torr
熱処理時間:15分
キャリアガス:H2、N2
H2(キャリアガス)供給量:9slm
N2(キャリアガス)供給量:1.5slm
NH3供給量:20slm
圧力:100torr
処理時間:10秒
キャリアガス:H2、N2
H2(キャリアガス)供給量:9slm
N2(キャリアガス)供給量:1.5slm
NH3供給量:0slm
前処理ガス(トリメチルアルミニウム)供給量:90sccm
成長温度:900〜930℃
圧力:100torr
V/III比:5184
TMAl供給量:90ccm
NH3供給量:5slm
キャリアガス:H2、N2
H2(キャリアガス)供給量:9slm
N2(キャリアガス)供給量:1.5slm
成長温度:900〜1020℃(連続変化)
圧力:100torr
V/III比:321
TMGa供給量:50〜500sccm(連続変化)
NH3供給量:5〜10slm(連続変化)
キャリアガス:H2、N2
H2(キャリアガス)供給量:13.5slm
N2(キャリアガス)供給量:1.5slm
半極性面を主面として有するサファイア基板と、当該主面上に位置するIII族窒化物半導体層と、を有し、当該主面に垂直な方向での平面視において、サファイア基板の<0002>方向と、III族窒化物半導体層の<10−10>方向とは「直交する」テンプレートIII族窒化物半導体基板を準備した。
成長方法:MOCVD法
成長温度:1050〜1075℃
圧力:100torr
V/III比:5184
TMAl供給量:90ccm
NH3供給量:5slm
キャリアガス:H2、N2
H2(キャリアガス)供給量:9slm
N2(キャリアガス)供給量:1.5slm
成長方法:MOCVD法
成長温度:1075〜1100℃(連続変化)
圧力:100torr
V/III比:321
TMGa供給量:50〜500sccm(連続変化)
NH3供給量:5〜10slm(連続変化)
キャリアガス:H2、N2
H2(キャリアガス)供給量:13.5slm
N2(キャリアガス)供給量:1.5slm
半極性面を主面として有するサファイア基板と、当該主面上に位置するIII族窒化物半導体層と、を有し、当該主面に垂直な方向での平面視において、サファイア基板の<0002>方向と、III族窒化物半導体層の<10−10>方向とは「直交する」テンプレートIII族窒化物半導体基板を準備した。
(1)で準備した実施例1、比較例1及び比較例2各々のテンプレートIII族窒化物半導体基板上に、以下の条件で、膜厚200μmのGaN層を形成した。
成長温度:1040℃
圧力:985hPa
V/III比:10
GaCl供給量:200sccm
NH3供給量:2slm
キャリアガス:H2
H2(キャリアガス)供給量:8slm
1. 半極性面を主面として有するサファイア基板と、
前記主面上に位置するIII族窒化物半導体層と、
を有し、
前記主面に垂直な方向での平面視において、前記サファイア基板の<0002>方向と、前記III族窒化物半導体層の<10−10>方向とは直交しないIII族窒化物半導体基板。
2. 1に記載のIII族窒化物半導体基板において、
前記主面は、{10−10}面をa面と平行になる方向に0.0°より大、10.5°以下の中のいずれかの角度で傾斜した面であり、
前記III族窒化物半導体層は、−C面から−a面方向に38.0°以上53.0°以下かつ、m面方向に−16.0°以上16.0°以下傾いた半極性面を露出面として有するIII族窒化物半導体基板。
3. 1又は2に記載のIII族窒化物半導体基板において、
前記III族窒化物半導体層の上に、膜厚50μm以上1000μm以下のIII族窒化物半導体層をさらに有するIII族窒化物半導体基板。
4. 半極性面を主面として有するサファイア基板と、前記主面上に位置するIII族窒化物半導体層と、を有し、前記主面に垂直な方向での平面視において、前記サファイア基板の<0002>方向と、前記III族窒化物半導体層の<10−10>方向とは直交しないIII族窒化物半導体基板を準備する準備工程と、
前記III族窒化物半導体層の上に、III族窒化物半導体をエピタキシャル成長する成長工程と、
を有するIII族窒化物半導体基板の製造方法。
5. 4に記載のIII族窒化物半導体基板の製造方法において、
前記成長工程では、前記III族窒化物半導体層の上に、膜厚50μm以上1000μm以下のIII族窒化物半導体層を形成するIII族窒化物半導体基板の製造方法。
6. 4又は5に記載のIII族窒化物半導体基板の製造方法において、
前記準備工程は、
前記主面が、{10−10}面をa面と平行になる方向に0.0°より大、10.5°以下の中のいずれかの角度で傾斜した面であるサファイア基板を準備するサファイア基板準備工程と、
窒化処理を行いながら、前記サファイア基板を加熱する加熱工程と、
前記加熱工程の後、前記サファイア基板上に、NH3は供給せず、Al、Ti、Cu、Vの中の何れかを含むガスを供給する前工程と、
前記前工程の後、前記主面上にバッファ層を形成するバッファ層形成工程と、
前記バッファ層の上に、III族窒化物半導体層を形成するIII族窒化物半導体層形成工程と、
を有するIII族窒化物半導体基板の製造方法。
7. 6に記載のIII族窒化物半導体基板の製造方法において、
前記バッファ層形成工程では、800℃以上950℃以下の成長温度で、前記バッファ層を形成するIII族窒化物半導体基板の製造方法。
8. 主面が、{10−10}面をa面と平行になる方向に0.0°より大、10.5°以下の中のいずれかの角度で傾斜した面であるサファイア基板を準備するサファイア基板準備工程と、
窒化処理を行いながら、前記サファイア基板を加熱する加熱工程と、
前記加熱工程の後、前記サファイア基板上に、NH3は供給せず、Al、Ti、Cu、Vの中の何れかを含むガスを供給する前工程と、
前記前工程の後、前記主面上にバッファ層を形成するバッファ層形成工程と、
前記バッファ層の上に、III族窒化物半導体層を形成するIII族窒化物半導体層形成工程と、
を有するIII族窒化物半導体基板の製造方法。
9. 8に記載のIII族窒化物半導体基板の製造方法において、
前記バッファ層形成工程では、800℃以上950℃以下の成長温度で、前記バッファ層を形成するIII族窒化物半導体基板の製造方法。
10 サファイア基板
11 主面
20 バッファ層
30 III族窒化物半導体層
31 成長面
40 III族窒化物半導体層
41 成長面
Claims (8)
- 半極性面を主面として有するサファイア基板と、
前記主面上に位置するIII族窒化物半導体層と、
を有し、
前記主面に垂直な方向での平面視において、前記サファイア基板の<0002>方向と、前記III族窒化物半導体層の<10−10>方向とのなす角が44.5°以上45.5°以下であるIII族窒化物半導体基板。 - 請求項1に記載のIII族窒化物半導体基板において、
前記主面は、{10−10}面をa面と平行になる方向に0.0°より大、10.5°以下の中のいずれかの角度で傾斜した面であり、
前記III族窒化物半導体層は、−C面から−a面方向に38.0°以上53.0°以下かつ、m面方向に−16.0°以上16.0°以下傾いた半極性面を露出面として有するIII族窒化物半導体基板。 - 請求項1又は2に記載のIII族窒化物半導体基板において、
前記III族窒化物半導体層の上に、膜厚50μm以上1000μm以下のIII族窒化物半導体層をさらに有するIII族窒化物半導体基板。 - 半極性面を主面として有するサファイア基板と、前記主面上に位置するIII族窒化物半導体層と、を有し、前記主面に垂直な方向での平面視において、前記サファイア基板の<0002>方向と、前記III族窒化物半導体層の<10−10>方向とのなす角が44.5°以上45.5°以下であるIII族窒化物半導体基板を準備する準備工程と、
前記III族窒化物半導体層の上に、III族窒化物半導体をエピタキシャル成長する成長工程と、
を有するIII族窒化物半導体基板の製造方法。 - 請求項4に記載のIII族窒化物半導体基板の製造方法において、
前記成長工程では、前記III族窒化物半導体層の上に、膜厚50μm以上1000μm以下のIII族窒化物半導体層を形成するIII族窒化物半導体基板の製造方法。 - 請求項4又は5に記載のIII族窒化物半導体基板の製造方法において、
前記準備工程は、
前記主面が、{10−10}面をa面と平行になる方向に0.0°より大、10.5°以下の中のいずれかの角度で傾斜した面であるサファイア基板を準備するサファイア基板準備工程と、
窒化処理を行いながら、前記サファイア基板を加熱する加熱工程と、
前記加熱工程の後、前記サファイア基板上に、NH3は供給せず、Al、Ti、Cu、Vの中の何れかを含むガスを供給する前工程と、
前記前工程の後、前記主面上にバッファ層を形成するバッファ層形成工程と、
前記バッファ層の上に、III族窒化物半導体層を形成するIII族窒化物半導体層形成工程と、
を有するIII族窒化物半導体基板の製造方法。 - 請求項6に記載のIII族窒化物半導体基板の製造方法において、
前記バッファ層形成工程では、800℃以上950℃以下の成長温度で、前記バッファ層を形成するIII族窒化物半導体基板の製造方法。 - 主面が、{10−10}面をa面と平行になる方向に0.0°より大、10.5°以下の中のいずれかの角度で傾斜した面であるサファイア基板を準備するサファイア基板準備工程と、
窒化処理を行いながら、前記サファイア基板を加熱する加熱工程と、
前記加熱工程の後、前記サファイア基板上に、NH3は供給せず、Alを含むガスを供給する前工程と、
前記前工程の後、800℃以上950℃以下の成長温度で、前記主面上にバッファ層を形成するバッファ層形成工程と、
前記バッファ層の上に、III族窒化物半導体層を形成するIII族窒化物半導体層形成工程と、
を有し、
前記III族窒化物半導体層形成工程で形成された前記III族窒化物半導体層の<10−10>方向と、前記サファイア基板の<0002>方向とのなす角が44.5°以上45.5°以下であるIII族窒化物半導体基板の製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016245357A JP6306677B1 (ja) | 2016-12-19 | 2016-12-19 | Iii族窒化物半導体基板、及び、iii族窒化物半導体基板の製造方法 |
PCT/JP2017/045392 WO2018117051A1 (ja) | 2016-12-19 | 2017-12-18 | Iii族窒化物半導体基板、及び、iii族窒化物半導体基板の製造方法 |
US16/470,545 US10910474B2 (en) | 2016-12-19 | 2017-12-18 | Group III nitride semiconductor substrate and method for manufacturing group III nitride semiconductor substrate |
CN201780078733.9A CN110088364B (zh) | 2016-12-19 | 2017-12-18 | Iii族氮化物半导体基板及iii族氮化物半导体基板的制造方法 |
EP17885108.5A EP3556912B1 (en) | 2016-12-19 | 2017-12-18 | Group iii nitride semiconductor substrate and production method for group iii nitride semiconductor substrate |
KR1020197018810A KR102535767B1 (ko) | 2016-12-19 | 2017-12-18 | Ⅲ족 질화물 반도체 기판 및 ⅲ족 질화물 반도체 기판의 제조방법 |
TW106144642A TWI738944B (zh) | 2016-12-19 | 2017-12-19 | Iii族氮化物半導體基板及iii族氮化物半導體基板之製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016245357A JP6306677B1 (ja) | 2016-12-19 | 2016-12-19 | Iii族窒化物半導体基板、及び、iii族窒化物半導体基板の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018006628A Division JP6871878B2 (ja) | 2018-01-18 | 2018-01-18 | Iii族窒化物半導体基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6306677B1 true JP6306677B1 (ja) | 2018-04-04 |
JP2018100189A JP2018100189A (ja) | 2018-06-28 |
Family
ID=61828571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016245357A Active JP6306677B1 (ja) | 2016-12-19 | 2016-12-19 | Iii族窒化物半導体基板、及び、iii族窒化物半導体基板の製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10910474B2 (ja) |
EP (1) | EP3556912B1 (ja) |
JP (1) | JP6306677B1 (ja) |
KR (1) | KR102535767B1 (ja) |
CN (1) | CN110088364B (ja) |
TW (1) | TWI738944B (ja) |
WO (1) | WO2018117051A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7084784B2 (ja) | 2018-05-25 | 2022-06-15 | 株式会社アルファ | インサイドハンドル装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008297138A (ja) * | 2007-05-30 | 2008-12-11 | Sumitomo Metal Mining Co Ltd | Iii族窒化物系化合物半導体製造用基板とその製造方法 |
JP2012160755A (ja) * | 2010-08-09 | 2012-08-23 | Panasonic Corp | 半導体発光デバイス |
JP2016012717A (ja) * | 2014-06-05 | 2016-01-21 | パナソニックIpマネジメント株式会社 | 窒化物半導体構造、窒化物半導体構造を備えた電子デバイス、窒化物半導体構造を備えた発光デバイス、および窒化物半導体構造を製造する方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6586819B2 (en) | 2000-08-14 | 2003-07-01 | Nippon Telegraph And Telephone Corporation | Sapphire substrate, semiconductor device, electronic component, and crystal growing method |
JP4935700B2 (ja) * | 2008-02-01 | 2012-05-23 | 豊田合成株式会社 | Iii族窒化物系化合物半導体の製造方法、ウエハ、iii族窒化物系化合物半導体素子 |
US8507304B2 (en) * | 2009-07-17 | 2013-08-13 | Applied Materials, Inc. | Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) |
US8878345B2 (en) | 2010-02-10 | 2014-11-04 | Aetech Corporation | Structural body and method for manufacturing semiconductor substrate |
JP5573632B2 (ja) * | 2010-11-25 | 2014-08-20 | 豊田合成株式会社 | Iii族窒化物半導体発光素子 |
KR102062327B1 (ko) * | 2012-09-11 | 2020-01-03 | 가부시키가이샤 도쿠야마 | 질화 알루미늄 기판 및 iii족 질화물 적층체 |
JP6346457B2 (ja) * | 2013-03-08 | 2018-06-20 | 国立大学法人山口大学 | 窒化ガリウム結晶自立基板の製造方法 |
JP2015032730A (ja) * | 2013-08-05 | 2015-02-16 | パナソニック株式会社 | 窒化物半導体構造およびそれを製造する方法 |
-
2016
- 2016-12-19 JP JP2016245357A patent/JP6306677B1/ja active Active
-
2017
- 2017-12-18 CN CN201780078733.9A patent/CN110088364B/zh active Active
- 2017-12-18 KR KR1020197018810A patent/KR102535767B1/ko active IP Right Grant
- 2017-12-18 EP EP17885108.5A patent/EP3556912B1/en active Active
- 2017-12-18 WO PCT/JP2017/045392 patent/WO2018117051A1/ja active Application Filing
- 2017-12-18 US US16/470,545 patent/US10910474B2/en active Active
- 2017-12-19 TW TW106144642A patent/TWI738944B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008297138A (ja) * | 2007-05-30 | 2008-12-11 | Sumitomo Metal Mining Co Ltd | Iii族窒化物系化合物半導体製造用基板とその製造方法 |
JP2012160755A (ja) * | 2010-08-09 | 2012-08-23 | Panasonic Corp | 半導体発光デバイス |
JP2016012717A (ja) * | 2014-06-05 | 2016-01-21 | パナソニックIpマネジメント株式会社 | 窒化物半導体構造、窒化物半導体構造を備えた電子デバイス、窒化物半導体構造を備えた発光デバイス、および窒化物半導体構造を製造する方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2018117051A1 (ja) | 2018-06-28 |
TW201839188A (zh) | 2018-11-01 |
TWI738944B (zh) | 2021-09-11 |
US10910474B2 (en) | 2021-02-02 |
EP3556912A4 (en) | 2020-09-09 |
US20190348504A1 (en) | 2019-11-14 |
KR102535767B1 (ko) | 2023-05-22 |
EP3556912A1 (en) | 2019-10-23 |
CN110088364B (zh) | 2021-07-30 |
CN110088364A (zh) | 2019-08-02 |
EP3556912B1 (en) | 2024-03-06 |
JP2018100189A (ja) | 2018-06-28 |
KR20190098986A (ko) | 2019-08-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4335187B2 (ja) | 窒化物系半導体装置の製造方法 | |
US6521514B1 (en) | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates | |
US7670933B1 (en) | Nanowire-templated lateral epitaxial growth of non-polar group III nitrides | |
JP2013149979A (ja) | 複合基材及びその製造方法並びに発光素子 | |
JP6871878B2 (ja) | Iii族窒化物半導体基板の製造方法 | |
FR2968678A1 (fr) | Procédés pour former des matériaux a base de nitrure du groupe iii et structures formées par ces procédés | |
JP6306677B1 (ja) | Iii族窒化物半導体基板、及び、iii族窒化物半導体基板の製造方法 | |
CN110168701B (zh) | Iii族氮化物半导体基板及iii族氮化物半导体基板的制造方法 | |
TW201839189A (zh) | Iii族氮化物半導體基板及iii族氮化物半導體基板之製造方法 | |
JP7330189B2 (ja) | シリコン基板上に炭化ケイ素を形成するための方法 | |
JP2018065711A (ja) | Iii族窒化物半導体基板、及び、iii族窒化物半導体基板の製造方法 | |
JP2007008742A (ja) | Iii族窒化物膜を形成する方法および半導体装置 | |
JP6934802B2 (ja) | Iii族窒化物半導体基板、及び、iii族窒化物半導体基板の製造方法 | |
US11680339B2 (en) | Method of manufacturing group III nitride semiconductor substrate, group III nitride semiconductor substrate, and bulk crystal | |
JP7055595B2 (ja) | Iii族窒化物半導体基板、及び、iii族窒化物半導体基板の製造方法 | |
JP6865669B2 (ja) | Iii族窒化物半導体基板、及び、iii族窒化物半導体基板の製造方法 | |
WO2020162346A1 (ja) | Iii族窒化物半導体基板、及び、iii族窒化物半導体基板の製造方法 | |
JP5831763B2 (ja) | 窒化物半導体自立基板の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20171031 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180118 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20180206 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180306 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180308 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6306677 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |