JP6301315B2 - クラスD増幅器出力ステージにおけるオーバシュート電圧(overshootvoltage)グリッチ(glitch)を抑制するための分割キャパシタスキーム - Google Patents

クラスD増幅器出力ステージにおけるオーバシュート電圧(overshootvoltage)グリッチ(glitch)を抑制するための分割キャパシタスキーム Download PDF

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Publication number
JP6301315B2
JP6301315B2 JP2015510291A JP2015510291A JP6301315B2 JP 6301315 B2 JP6301315 B2 JP 6301315B2 JP 2015510291 A JP2015510291 A JP 2015510291A JP 2015510291 A JP2015510291 A JP 2015510291A JP 6301315 B2 JP6301315 B2 JP 6301315B2
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Japan
Prior art keywords
node
transistor
coupled
voltage
class
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2015510291A
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English (en)
Japanese (ja)
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JP2015521408A (ja
JP2015521408A5 (enExample
Inventor
ファン、チェンリング
フェイ、ハイボー
シェンコ、マシュー・ディー.
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Qualcomm Inc
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Qualcomm Inc
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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217Class D power amplifiers; Switching amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52Circuit arrangements for protecting such amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
JP2015510291A 2012-05-02 2013-04-08 クラスD増幅器出力ステージにおけるオーバシュート電圧(overshootvoltage)グリッチ(glitch)を抑制するための分割キャパシタスキーム Expired - Fee Related JP6301315B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261641791P 2012-05-02 2012-05-02
US61/641,791 2012-05-02
US13/628,011 US8947163B2 (en) 2012-05-02 2012-09-26 Split capacitors scheme for suppressing overshoot voltage glitches in class D amplifier output stage
US13/628,011 2012-09-26
PCT/US2013/035680 WO2013165653A1 (en) 2012-05-02 2013-04-08 Split capacitors scheme for suppressing overshoot voltage glitches in class d amplifier output stage

Publications (3)

Publication Number Publication Date
JP2015521408A JP2015521408A (ja) 2015-07-27
JP2015521408A5 JP2015521408A5 (enExample) 2016-05-12
JP6301315B2 true JP6301315B2 (ja) 2018-03-28

Family

ID=49512094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015510291A Expired - Fee Related JP6301315B2 (ja) 2012-05-02 2013-04-08 クラスD増幅器出力ステージにおけるオーバシュート電圧(overshootvoltage)グリッチ(glitch)を抑制するための分割キャパシタスキーム

Country Status (5)

Country Link
US (1) US8947163B2 (enExample)
EP (1) EP2845313B1 (enExample)
JP (1) JP6301315B2 (enExample)
CN (1) CN104272588B (enExample)
WO (1) WO2013165653A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9641141B1 (en) * 2016-02-29 2017-05-02 Hong Kong Applied Science and Technology Research Institute Company Limited Harmonics suppression circuit for a switch-mode power amplifier
CN105830342B (zh) * 2016-02-29 2018-10-16 香港应用科技研究院有限公司 开关模式功率放大器的谐波抑制电路
US10263577B2 (en) * 2016-12-09 2019-04-16 Advanced Energy Industries, Inc. Gate drive circuit and method of operating the same

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4818893A (en) * 1986-10-10 1989-04-04 Prime Computer, Inc. High speed switching circuit
US5047913A (en) 1990-09-17 1991-09-10 General Electric Company Method for controlling a power converter using an auxiliary resonant commutation circuit
JP3504190B2 (ja) * 1999-07-21 2004-03-08 株式会社ルネサステクノロジ 半導体装置、およびこれを用いた回線インターフェイス装置および情報処理装置
JP2001102874A (ja) * 1999-09-30 2001-04-13 Hitachi Ltd サージ保護回路および半導体集積回路
JP4295928B2 (ja) * 2001-05-28 2009-07-15 三菱電機株式会社 半導体保護回路
US6781458B2 (en) * 2002-08-23 2004-08-24 Tripath Technology, Inc. Providing DC isolation in switching amplifiers
CN1689223A (zh) * 2002-08-23 2005-10-26 三路技术有限公司 提供开关放大器中的直流隔离
TWI341084B (en) * 2006-03-22 2011-04-21 Yamaha Corp Semiconductor integrated circuit
JP2007258990A (ja) * 2006-03-22 2007-10-04 Yamaha Corp 半導体集積回路
US7965141B2 (en) * 2006-07-07 2011-06-21 Nxp B.V. Class D audio amplifier
US7898783B2 (en) 2006-08-10 2011-03-01 Texas Instruments Incorporated Methods and apparatus to reduce substrate voltage bounces and spike voltages in switching amplifiers
US7492219B1 (en) 2006-08-10 2009-02-17 Marvell International Ltd. Power efficient amplifier
US7839215B2 (en) 2008-06-16 2010-11-23 Rgb Systems, Inc. Method and apparatus for power converter for class D audio power amplifiers
CN101790122B (zh) * 2010-02-06 2014-05-14 青岛海信移动通信技术股份有限公司 音频系统的爆破音消除电路及移动通信终端
US8237495B2 (en) 2010-07-07 2012-08-07 Broadcom Corporation High efficiency amplifier with reduced electromagnetic interference

Also Published As

Publication number Publication date
US8947163B2 (en) 2015-02-03
CN104272588A (zh) 2015-01-07
US20130293298A1 (en) 2013-11-07
WO2013165653A1 (en) 2013-11-07
CN104272588B (zh) 2017-05-03
JP2015521408A (ja) 2015-07-27
EP2845313A1 (en) 2015-03-11
EP2845313B1 (en) 2018-05-23
WO2013165653A9 (en) 2014-08-07

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