JP6298216B2 - 容量性圧力センサ用の懸架メンブレン - Google Patents

容量性圧力センサ用の懸架メンブレン Download PDF

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JP6298216B2
JP6298216B2 JP2017505562A JP2017505562A JP6298216B2 JP 6298216 B2 JP6298216 B2 JP 6298216B2 JP 2017505562 A JP2017505562 A JP 2017505562A JP 2017505562 A JP2017505562 A JP 2017505562A JP 6298216 B2 JP6298216 B2 JP 6298216B2
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conductive material
layer
membrane
boundary
cavity
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JP2017531166A (ja
Inventor
フレデリーク アドリヌス ベスリング、ヴィッレム
フレデリーク アドリヌス ベスリング、ヴィッレム
ヘンリクス ヴィルヘルムス ピイェネンブルグ、レムコ
ヘンリクス ヴィルヘルムス ピイェネンブルグ、レムコ
デア アフォールト、カスパー ファン
デア アフォールト、カスパー ファン
オールドセン、マルテン．
ゴーッセンス、マルティン
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アムス インターナショナル エージー
アムス インターナショナル エージー
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00158—Diaphragms, membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G01L9/0044—Constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0135—Controlling etch progression
    • B81C2201/014—Controlling etch progression by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Micromachines (AREA)
JP2017505562A 2014-07-28 2015-07-24 容量性圧力センサ用の懸架メンブレン Active JP6298216B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/444,921 US9340412B2 (en) 2014-07-28 2014-07-28 Suspended membrane for capacitive pressure sensor
US14/444,921 2014-07-28
PCT/EP2015/067042 WO2016016137A1 (en) 2014-07-28 2015-07-24 Suspended membrane for capacitive pressure sensor

Publications (2)

Publication Number Publication Date
JP2017531166A JP2017531166A (ja) 2017-10-19
JP6298216B2 true JP6298216B2 (ja) 2018-03-20

Family

ID=53682723

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JP2017505562A Active JP6298216B2 (ja) 2014-07-28 2015-07-24 容量性圧力センサ用の懸架メンブレン

Country Status (6)

Country Link
US (1) US9340412B2 (zh)
EP (1) EP3174825B1 (zh)
JP (1) JP6298216B2 (zh)
KR (1) KR101921843B1 (zh)
CN (1) CN106794981B (zh)
WO (1) WO2016016137A1 (zh)

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WO2016100487A1 (en) * 2014-12-17 2016-06-23 Robert Bosch Gmbh Membrane for a capacitive mems pressure sensor and method of forming a capacitive mems pressure sensor
JP6557367B2 (ja) * 2016-02-15 2019-08-07 京セラ株式会社 圧力センサ
EP3279630B1 (en) 2016-08-03 2019-06-26 ams AG Pressure sensor module
FR3071492B1 (fr) * 2017-09-25 2021-07-09 Commissariat Energie Atomique Micro-dispositif comportant un element protege contre une gravure hf et forme d'un materiau comprenant un semi-conducteur et un metal
WO2019093218A1 (ja) * 2017-11-07 2019-05-16 アルプスアルパイン株式会社 圧力センサ
WO2019096995A1 (en) * 2017-11-17 2019-05-23 Ams International Ag Capacitive pressure sensors and other devices having a suspended membrane and having rounded corners at an anchor edge
US11548781B2 (en) 2017-11-17 2023-01-10 Sciosense B.V. Attachment of stress sensitive integrated circuit dies
TW201932794A (zh) 2017-12-15 2019-08-16 瑞士商Ａｍｓ國際有限公司 可操作於使用多重壓力感測器之定向判定之可移動設備
CN109956447A (zh) * 2017-12-25 2019-07-02 中芯国际集成电路制造(上海)有限公司 一种mems器件及制备方法、电子装置
CN111868492A (zh) * 2018-01-10 2020-10-30 希奥检测有限公司 电容式压力传感器
WO2019207072A1 (en) * 2018-04-25 2019-10-31 Ams Sensors Uk Limited Capacitive sensor having temperature stable output
EP3569568B1 (en) * 2018-05-18 2023-08-02 ams AG Method for manufacturing an etch stop layer and mems sensor comprising an etch stop layer
CN112166313B (zh) 2018-05-28 2022-06-21 希奥检测有限公司 传感器装置和操作传感器装置的方法
EP3650826B1 (en) 2018-11-07 2023-08-16 Sciosense B.V. Semiconductor transducer device with multilayer diaphragm and method of manufacturing a semiconductor transducer device with multilayer diaphragm
EP3650827B1 (en) 2018-11-07 2022-08-31 Sciosense B.V. Method of manufacturing a semiconductor transducer device with multilayer diaphragm and semiconductor transducer device with multilayer diaphragm
US20200156111A1 (en) * 2018-11-16 2020-05-21 Vermon S.A. Capacitive micromachined ultrasonic transducer and method of manufacturing the same
EP3653567B1 (en) 2018-11-19 2024-01-10 Sciosense B.V. Method for manufacturing an integrated mems transducer device and integrated mems transducer device
DE102018222715B4 (de) * 2018-12-21 2021-01-21 Robert Bosch Gmbh Sensoreinrichtung und Verfahren zum Herstellen einer Sensoreinrichtung

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Also Published As

Publication number Publication date
KR20170036061A (ko) 2017-03-31
EP3174825B1 (en) 2018-06-06
KR101921843B1 (ko) 2018-11-23
JP2017531166A (ja) 2017-10-19
US20160023893A1 (en) 2016-01-28
WO2016016137A1 (en) 2016-02-04
CN106794981B (zh) 2018-07-20
EP3174825A1 (en) 2017-06-07
CN106794981A (zh) 2017-05-31
US9340412B2 (en) 2016-05-17

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