JP6297301B2 - 細長い領域のモニタリングを用いるインシトゥモニタシステム - Google Patents

細長い領域のモニタリングを用いるインシトゥモニタシステム Download PDF

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Publication number
JP6297301B2
JP6297301B2 JP2013229641A JP2013229641A JP6297301B2 JP 6297301 B2 JP6297301 B2 JP 6297301B2 JP 2013229641 A JP2013229641 A JP 2013229641A JP 2013229641 A JP2013229641 A JP 2013229641A JP 6297301 B2 JP6297301 B2 JP 6297301B2
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Prior art keywords
angle
polishing
substrate
measurement signal
signal
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JP2013229641A
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Japanese (ja)
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JP2014096585A (ja
JP2014096585A5 (https=
Inventor
クン シュー，
クン シュー，
シーハル シェン，
シーハル シェン，
チュウ リュウ，
チュウ リュウ，
インゲマール カールッソン，
インゲマール カールッソン，
ハサン ジー． イラヴァニ，
ハサン ジー． イラヴァニ，
ボグスロー エー． スウェデク，
ボグスロー エー． スウェデク，
ウェンチャン トゥー，
ウェンチャン トゥー，
ドイル イー． ベネット，
ドイル イー． ベネット，
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Applied Materials Inc
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Applied Materials Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/048—Lapping machines or devices; Accessories designed for working plane surfaces of sliders and magnetic heads of hard disc drives or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2013229641A 2012-11-08 2013-11-05 細長い領域のモニタリングを用いるインシトゥモニタシステム Active JP6297301B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261724218P 2012-11-08 2012-11-08
US61/724,218 2012-11-08
US13/791,694 2013-03-08
US13/791,694 US9205527B2 (en) 2012-11-08 2013-03-08 In-situ monitoring system with monitoring of elongated region

Publications (3)

Publication Number Publication Date
JP2014096585A JP2014096585A (ja) 2014-05-22
JP2014096585A5 JP2014096585A5 (https=) 2016-12-22
JP6297301B2 true JP6297301B2 (ja) 2018-03-20

Family

ID=50622777

Family Applications (1)

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JP2013229641A Active JP6297301B2 (ja) 2012-11-08 2013-11-05 細長い領域のモニタリングを用いるインシトゥモニタシステム

Country Status (4)

Country Link
US (1) US9205527B2 (https=)
JP (1) JP6297301B2 (https=)
KR (1) KR102147784B1 (https=)
TW (1) TWI589394B (https=)

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* Cited by examiner, † Cited by third party
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US9754846B2 (en) * 2014-06-23 2017-09-05 Applied Materials, Inc. Inductive monitoring of conductive trench depth
JP6399873B2 (ja) * 2014-09-17 2018-10-03 株式会社荏原製作所 膜厚信号処理装置、研磨装置、膜厚信号処理方法、及び、研磨方法
KR102412776B1 (ko) * 2015-10-27 2022-06-24 주식회사 케이씨텍 웨이퍼 가장자리에서의 연마층 두께 검출 정확성이 향상된 화학 기계적 연마 장치
JP6779633B2 (ja) * 2016-02-23 2020-11-04 株式会社荏原製作所 研磨装置
JP6795337B2 (ja) * 2016-06-29 2020-12-02 株式会社荏原製作所 膜厚信号処理装置、研磨装置、膜厚信号処理方法、及び、研磨方法
WO2018045039A1 (en) * 2016-08-31 2018-03-08 Applied Materials, Inc. Polishing system with annular platen or polishing pad
TW201822953A (zh) 2016-09-16 2018-07-01 美商應用材料股份有限公司 基於溝槽深度的電磁感應監控進行的過拋光
US10427272B2 (en) 2016-09-21 2019-10-01 Applied Materials, Inc. Endpoint detection with compensation for filtering
KR102547156B1 (ko) * 2016-10-21 2023-06-26 어플라이드 머티어리얼스, 인코포레이티드 인-시튜 전자기 유도 모니터링 시스템을 위한 코어 구성
TWI816620B (zh) * 2017-04-21 2023-09-21 美商應用材料股份有限公司 使用神經網路來監測的拋光裝置
US10898986B2 (en) * 2017-09-15 2021-01-26 Applied Materials, Inc. Chattering correction for accurate sensor position determination on wafer
TWI825075B (zh) 2018-04-03 2023-12-11 美商應用材料股份有限公司 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
CN108789157A (zh) * 2018-06-13 2018-11-13 苏州市蓄动源自动化科技有限公司 自动化打磨装置
CN118943037A (zh) 2018-09-26 2024-11-12 应用材料公司 针对原位电磁感应监测的边缘重建中的基板掺杂的补偿
JP7447284B2 (ja) 2020-06-24 2024-03-11 アプライド マテリアルズ インコーポレイテッド 研磨パッドの摩耗補償による基板層の厚さの決定
JP7629295B2 (ja) * 2020-11-25 2025-02-13 株式会社荏原製作所 渦電流センサ
CN116652813A (zh) * 2022-02-17 2023-08-29 中国科学院微电子研究所 一种化学机械平坦化设备、终点检测方法、装置及系统
WO2023234974A1 (en) * 2022-06-03 2023-12-07 Applied Materials, Inc. Determining substrate orientation with acoustic signals
US20240308019A1 (en) * 2023-03-17 2024-09-19 Applied Materials, Inc. Method for detection of wafer slippage
CN117885031A (zh) * 2024-01-17 2024-04-16 华虹半导体(无锡)有限公司 监控化学机械平坦化研磨端点检测异常的装置及方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6399501B2 (en) 1999-12-13 2002-06-04 Applied Materials, Inc. Method and apparatus for detecting polishing endpoint with optical monitoring
US6924641B1 (en) 2000-05-19 2005-08-02 Applied Materials, Inc. Method and apparatus for monitoring a metal layer during chemical mechanical polishing
DE60116757T4 (de) * 2000-05-19 2007-01-18 Applied Materials, Inc., Santa Clara Verfahren und vorrichtung zur "in-situ" überwachung der dicke während des chemisch-mechanischen planiervorganges
TWI273947B (en) * 2002-02-06 2007-02-21 Applied Materials Inc Method and apparatus of eddy current monitoring for chemical mechanical polishing
JP2003347259A (ja) * 2002-05-23 2003-12-05 Ebara Corp ポリッシングの終点検知方法
SG125108A1 (en) * 2003-03-11 2006-09-29 Asml Netherlands Bv Assembly comprising a sensor for determining at least one of tilt and height of a substrate, a method therefor and a lithographic projection apparatus
US7008296B2 (en) 2003-06-18 2006-03-07 Applied Materials, Inc. Data processing for monitoring chemical mechanical polishing
US7112960B2 (en) 2003-07-31 2006-09-26 Applied Materials, Inc. Eddy current system for in-situ profile measurement
JP2007334934A (ja) * 2006-06-12 2007-12-27 Shinka Jitsugyo Kk 積層体の研磨量検出素子、ウエファー、および積層体の研磨方法
JP5513795B2 (ja) * 2009-07-16 2014-06-04 株式会社荏原製作所 研磨方法および装置
JP5615831B2 (ja) * 2008-11-14 2014-10-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 縁部分解能強化渦電流センサ
TW201201957A (en) 2010-01-29 2012-01-16 Applied Materials Inc High sensitivity real time profile control eddy current monitoring system
US9023667B2 (en) * 2011-04-27 2015-05-05 Applied Materials, Inc. High sensitivity eddy current monitoring system
US20120276817A1 (en) * 2011-04-27 2012-11-01 Iravani Hassan G Eddy current monitoring of metal residue or metal pillars

Also Published As

Publication number Publication date
JP2014096585A (ja) 2014-05-22
KR102147784B1 (ko) 2020-08-25
KR20140059741A (ko) 2014-05-16
TWI589394B (zh) 2017-07-01
US9205527B2 (en) 2015-12-08
US20140127971A1 (en) 2014-05-08
TW201422369A (zh) 2014-06-16

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