JP2014096585A5 - - Google Patents

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Publication number
JP2014096585A5
JP2014096585A5 JP2013229641A JP2013229641A JP2014096585A5 JP 2014096585 A5 JP2014096585 A5 JP 2014096585A5 JP 2013229641 A JP2013229641 A JP 2013229641A JP 2013229641 A JP2013229641 A JP 2013229641A JP 2014096585 A5 JP2014096585 A5 JP 2014096585A5
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JP
Japan
Prior art keywords
angle
polishing
substrate
measurement signal
signal
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JP2013229641A
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English (en)
Japanese (ja)
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JP2014096585A (ja
JP6297301B2 (ja
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Priority claimed from US13/791,694 external-priority patent/US9205527B2/en
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Publication of JP2014096585A5 publication Critical patent/JP2014096585A5/ja
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Publication of JP6297301B2 publication Critical patent/JP6297301B2/ja
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JP2013229641A 2012-11-08 2013-11-05 細長い領域のモニタリングを用いるインシトゥモニタシステム Active JP6297301B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261724218P 2012-11-08 2012-11-08
US61/724,218 2012-11-08
US13/791,694 2013-03-08
US13/791,694 US9205527B2 (en) 2012-11-08 2013-03-08 In-situ monitoring system with monitoring of elongated region

Publications (3)

Publication Number Publication Date
JP2014096585A JP2014096585A (ja) 2014-05-22
JP2014096585A5 true JP2014096585A5 (https=) 2016-12-22
JP6297301B2 JP6297301B2 (ja) 2018-03-20

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JP2013229641A Active JP6297301B2 (ja) 2012-11-08 2013-11-05 細長い領域のモニタリングを用いるインシトゥモニタシステム

Country Status (4)

Country Link
US (1) US9205527B2 (https=)
JP (1) JP6297301B2 (https=)
KR (1) KR102147784B1 (https=)
TW (1) TWI589394B (https=)

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US9754846B2 (en) * 2014-06-23 2017-09-05 Applied Materials, Inc. Inductive monitoring of conductive trench depth
JP6399873B2 (ja) * 2014-09-17 2018-10-03 株式会社荏原製作所 膜厚信号処理装置、研磨装置、膜厚信号処理方法、及び、研磨方法
KR102412776B1 (ko) * 2015-10-27 2022-06-24 주식회사 케이씨텍 웨이퍼 가장자리에서의 연마층 두께 검출 정확성이 향상된 화학 기계적 연마 장치
JP6779633B2 (ja) * 2016-02-23 2020-11-04 株式会社荏原製作所 研磨装置
JP6795337B2 (ja) * 2016-06-29 2020-12-02 株式会社荏原製作所 膜厚信号処理装置、研磨装置、膜厚信号処理方法、及び、研磨方法
WO2018045039A1 (en) * 2016-08-31 2018-03-08 Applied Materials, Inc. Polishing system with annular platen or polishing pad
TW201822953A (zh) 2016-09-16 2018-07-01 美商應用材料股份有限公司 基於溝槽深度的電磁感應監控進行的過拋光
US10427272B2 (en) 2016-09-21 2019-10-01 Applied Materials, Inc. Endpoint detection with compensation for filtering
KR102547156B1 (ko) * 2016-10-21 2023-06-26 어플라이드 머티어리얼스, 인코포레이티드 인-시튜 전자기 유도 모니터링 시스템을 위한 코어 구성
TWI816620B (zh) * 2017-04-21 2023-09-21 美商應用材料股份有限公司 使用神經網路來監測的拋光裝置
US10898986B2 (en) * 2017-09-15 2021-01-26 Applied Materials, Inc. Chattering correction for accurate sensor position determination on wafer
TWI825075B (zh) 2018-04-03 2023-12-11 美商應用材料股份有限公司 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
CN108789157A (zh) * 2018-06-13 2018-11-13 苏州市蓄动源自动化科技有限公司 自动化打磨装置
CN118943037A (zh) 2018-09-26 2024-11-12 应用材料公司 针对原位电磁感应监测的边缘重建中的基板掺杂的补偿
JP7447284B2 (ja) 2020-06-24 2024-03-11 アプライド マテリアルズ インコーポレイテッド 研磨パッドの摩耗補償による基板層の厚さの決定
JP7629295B2 (ja) * 2020-11-25 2025-02-13 株式会社荏原製作所 渦電流センサ
CN116652813A (zh) * 2022-02-17 2023-08-29 中国科学院微电子研究所 一种化学机械平坦化设备、终点检测方法、装置及系统
WO2023234974A1 (en) * 2022-06-03 2023-12-07 Applied Materials, Inc. Determining substrate orientation with acoustic signals
US20240308019A1 (en) * 2023-03-17 2024-09-19 Applied Materials, Inc. Method for detection of wafer slippage
CN117885031A (zh) * 2024-01-17 2024-04-16 华虹半导体(无锡)有限公司 监控化学机械平坦化研磨端点检测异常的装置及方法

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US6399501B2 (en) 1999-12-13 2002-06-04 Applied Materials, Inc. Method and apparatus for detecting polishing endpoint with optical monitoring
US6924641B1 (en) 2000-05-19 2005-08-02 Applied Materials, Inc. Method and apparatus for monitoring a metal layer during chemical mechanical polishing
DE60116757T4 (de) * 2000-05-19 2007-01-18 Applied Materials, Inc., Santa Clara Verfahren und vorrichtung zur "in-situ" überwachung der dicke während des chemisch-mechanischen planiervorganges
TWI273947B (en) * 2002-02-06 2007-02-21 Applied Materials Inc Method and apparatus of eddy current monitoring for chemical mechanical polishing
JP2003347259A (ja) * 2002-05-23 2003-12-05 Ebara Corp ポリッシングの終点検知方法
SG125108A1 (en) * 2003-03-11 2006-09-29 Asml Netherlands Bv Assembly comprising a sensor for determining at least one of tilt and height of a substrate, a method therefor and a lithographic projection apparatus
US7008296B2 (en) 2003-06-18 2006-03-07 Applied Materials, Inc. Data processing for monitoring chemical mechanical polishing
US7112960B2 (en) 2003-07-31 2006-09-26 Applied Materials, Inc. Eddy current system for in-situ profile measurement
JP2007334934A (ja) * 2006-06-12 2007-12-27 Shinka Jitsugyo Kk 積層体の研磨量検出素子、ウエファー、および積層体の研磨方法
JP5513795B2 (ja) * 2009-07-16 2014-06-04 株式会社荏原製作所 研磨方法および装置
JP5615831B2 (ja) * 2008-11-14 2014-10-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 縁部分解能強化渦電流センサ
TW201201957A (en) 2010-01-29 2012-01-16 Applied Materials Inc High sensitivity real time profile control eddy current monitoring system
US9023667B2 (en) * 2011-04-27 2015-05-05 Applied Materials, Inc. High sensitivity eddy current monitoring system
US20120276817A1 (en) * 2011-04-27 2012-11-01 Iravani Hassan G Eddy current monitoring of metal residue or metal pillars

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