JP6281734B2 - 圧電振動子及びその製造方法 - Google Patents
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- 238000000605 extraction Methods 0.000 claims description 14
- 238000007789 sealing Methods 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
- H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
- H03H9/0519—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps for cantilever
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/022—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the cantilever type
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- Physics & Mathematics (AREA)
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
W1+T1≦w1<W1+2T1
の関係を有し、かつ、基板300の短手方向の断面視(図3C参照)において、キャップ200の開口内の中央部にあって対向する内壁の幅w2、基板300の凸部312の幅T2、及び、基板300の凸部312の間の上面の幅W2とした場合、
W2+T2≦w2<W2+2T2
の関係を有している。
W1+T1≦w1≦W1+2T1−2t1
の関係を有し、かつ、基板300の短手方向の断面視(図3C参照)において、キャップ200における基板300に対向する端面205の幅t2(0≦T2−2t2)とした場合、
W2+T2≦w2≦W2+2T2−2t2
の関係を有することが好ましい。
100 圧電振動素子
200 キャップ
205 端面
300 基板
310 ベース部
312 凸部
320,322 接続電極
320a,322a 引出電極
350 接合材
Claims (7)
- 圧電振動素子と、
平面視して長手方向及び短手方向を有する略矩形の基板であって、前記圧電振動素子が搭載された上面を有し、平面視して前記圧電振動素子の周囲を囲むように前記上面の全周に亘って形成された前記圧電振動素子の上面よりも前記基板の前記上面からの高さが低い凸部を有する基板と、
前記基板の前記上面に対向している平板部と当該平板部から開口を持つように前記基板の前記上面に向かって突出している縁部とを有しており、前記圧電振動素子を密封封止するように前記縁部が接合材を介して前記基板の前記凸部に接合されたキャップと
を備え、
前記基板の前記長手方向の断面視において、前記キャップの開口内の幅w1、前記基板の前記凸部の幅T1、前記基板の前記凸部の間の上面の幅W1、及び、前記キャップにおける前記基板に対向する端面の幅t1(0≦T1−2t1)とした場合、
W1+T1≦w1<W1+2T1、及び、
w1≦W1+2T1−2t1
の関係を有し、かつ、
前記基板の前記短手方向の断面視において、前記キャップの開口内の幅w2、前記基板の前記凸部の幅T2、前記基板の前記凸部の間の上面の幅W2、及び、前記キャップにおける前記基板に対向する端面の幅t2(0≦T2−2t2)とした場合、
W2+T2≦w2<W2+2T2、及び、
w2≦W2+2T2−2t2
の関係を有する、圧電振動子。 - 前記基板は、前記第1面に形成された接続電極と、当該接続電極から前記凸部に向かって前記基板の外縁に引き出された引出電極とを含み、
前記圧電振動素子は、導電保持部材を介して前記基板の前記接続電極に電気的に接続された、請求項1記載の圧電振動子。 - 前記圧電振動素子は、水晶振動素子である、請求項1又は2に記載の圧電振動子。
- 前記基板は、前記凸部を支持するベース部を有し、
前記ベース部と前記凸部とが一体的に形成された、請求項1から3のいずれか一項に記載の圧電振動子。 - 前記基板の前記凸部は、平面視して前記基板の前記上面における最外周の縁の全周に亘って形成された、請求項1から4のいずれか一項に記載の圧電振動子。
- 前記基板の前記凸部は、前記基板の前記上面からの高さが前記圧電振動素子の下面より高い、請求項1から5のいずれか一項に記載の圧電振動子。
- 圧電振動素子を形成すること、
平面視して長手方向及び短手方向を有する略矩形の基板であって、圧電振動素子の搭載領域を含む上面を有し、平面視して前記圧電振動素子の周囲を囲むように前記上面の全周に亘って形成された前記圧電振動素子の上面よりも前記基板の前記上面からの高さが低い凸部を有する基板を形成すること、
前記圧電振動素子を前記基板の前記上面の前記搭載領域に搭載すること、及び、
前記基板の前記上面に対向している平板部と当該平板部から開口を持つように前記基板の前記上面に向かって突出している縁部とを有するキャップを用意し、前記キャップの前記縁部を接合材を介して前記基板の前記凸部に接合して、前記圧電振動素子を密封封止すること
を含み、
前記基板の前記長手方向の断面視において、前記キャップの開口内の幅w1、前記基板の前記凸部の幅T1、前記基板の前記凸部の間の上面の幅W1、及び、前記キャップにおける前記基板に対向する端面の幅t1(0≦T1−2t1)とした場合、
W1+T1≦w1<W1+2T1、及び、
w1≦W1+2T1−2t1
の関係を有し、かつ、
前記基板の前記短手方向の断面視において、前記キャップの開口内の幅w2、前記基板の前記凸部の幅T2、前記基板の前記凸部の間の上面の幅W2、及び、前記キャップにおける前記基板に対向する端面の幅t2(0≦T2−2t2)とした場合、
W2+T2≦w2<W2+2T2、及び、
w2≦W2+2T2−2t2
の関係を有する、圧電振動子の製造方法。
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JP6720416B2 (ja) * | 2016-08-31 | 2020-07-08 | ホアウェイ・テクノロジーズ・デュッセルドルフ・ゲーエムベーハー | フィルタリングされたマルチキャリア通信 |
US11239823B1 (en) | 2017-06-16 | 2022-02-01 | Hrl Laboratories, Llc | Quartz MEMS piezoelectric resonator for chipscale RF antennae |
US11101786B1 (en) | 2017-06-20 | 2021-08-24 | Hrl Laboratories, Llc | HF-VHF quartz MEMS resonator |
JP6813682B2 (ja) * | 2017-07-21 | 2021-01-13 | 京セラ株式会社 | 電子部品収納用パッケージ、電子装置および電子モジュール |
JP6958121B2 (ja) * | 2017-08-29 | 2021-11-02 | 住友電気工業株式会社 | 光モジュールおよびその製造方法 |
US10921360B2 (en) * | 2018-02-09 | 2021-02-16 | Hrl Laboratories, Llc | Dual magnetic and electric field quartz sensor |
US10819276B1 (en) | 2018-05-31 | 2020-10-27 | Hrl Laboratories, Llc | Broadband integrated RF magnetic antenna |
US11563420B1 (en) | 2019-03-29 | 2023-01-24 | Hrl Laboratories, Llc | Femto-tesla MEMS RF antenna with integrated flux concentrator |
US11988727B1 (en) | 2019-07-31 | 2024-05-21 | Hrl Laboratories, Llc | Magnetostrictive MEMS magnetic gradiometer |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH11261364A (ja) * | 1998-03-09 | 1999-09-24 | Murata Mfg Co Ltd | 電子部品 |
JP2001094379A (ja) * | 1999-09-21 | 2001-04-06 | Nippon Dempa Kogyo Co Ltd | セラミックベース、圧電装置及び圧電発振器 |
WO2009072351A1 (ja) * | 2007-12-06 | 2009-06-11 | Murata Manufacturing Co., Ltd. | 圧電振動部品 |
JP2011066651A (ja) * | 2009-09-17 | 2011-03-31 | Kyocera Kinseki Corp | 圧電デバイス |
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US5648746A (en) * | 1993-08-17 | 1997-07-15 | Murata Manufacturing Co., Ltd. | Stacked diezoelectric resonator ladder-type filter with at least one width expansion mode resonator |
JP3114526B2 (ja) * | 1994-10-17 | 2000-12-04 | 株式会社村田製作所 | チップ型圧電共振部品 |
JP5526188B2 (ja) | 2009-12-09 | 2014-06-18 | 日本電波工業株式会社 | 表面実装水晶振動子 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11261364A (ja) * | 1998-03-09 | 1999-09-24 | Murata Mfg Co Ltd | 電子部品 |
JP2001094379A (ja) * | 1999-09-21 | 2001-04-06 | Nippon Dempa Kogyo Co Ltd | セラミックベース、圧電装置及び圧電発振器 |
WO2009072351A1 (ja) * | 2007-12-06 | 2009-06-11 | Murata Manufacturing Co., Ltd. | 圧電振動部品 |
JP2011066651A (ja) * | 2009-09-17 | 2011-03-31 | Kyocera Kinseki Corp | 圧電デバイス |
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JPWO2016194562A1 (ja) | 2018-03-29 |
WO2016194562A1 (ja) | 2016-12-08 |
US10205434B2 (en) | 2019-02-12 |
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