JP6280875B2 - はんだバンプの形成方法およびはんだバンプ - Google Patents
はんだバンプの形成方法およびはんだバンプ Download PDFInfo
- Publication number
- JP6280875B2 JP6280875B2 JP2014558608A JP2014558608A JP6280875B2 JP 6280875 B2 JP6280875 B2 JP 6280875B2 JP 2014558608 A JP2014558608 A JP 2014558608A JP 2014558608 A JP2014558608 A JP 2014558608A JP 6280875 B2 JP6280875 B2 JP 6280875B2
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- Prior art keywords
- solder
- solder bump
- electrode
- mass
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910000679 solder Inorganic materials 0.000 title claims description 174
- 238000000034 method Methods 0.000 title claims description 38
- 229910052802 copper Inorganic materials 0.000 claims description 20
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 229910052797 bismuth Inorganic materials 0.000 claims description 7
- 239000006023 eutectic alloy Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 2
- 238000007689 inspection Methods 0.000 description 20
- 239000000463 material Substances 0.000 description 16
- 238000007747 plating Methods 0.000 description 11
- 238000005476 soldering Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 10
- 229910000765 intermetallic Inorganic materials 0.000 description 9
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 230000004907 flux Effects 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910005887 NiSn Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910020816 Sn Pb Inorganic materials 0.000 description 2
- 229910020922 Sn-Pb Inorganic materials 0.000 description 2
- 229910008783 Sn—Pb Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000011179 visual inspection Methods 0.000 description 2
- 229910016338 Bi—Sn Inorganic materials 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910005578 NiBi Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0255—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in welding
- B23K35/0261—Rods, electrodes, wires
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/264—Bi as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3033—Ni as the principal constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C12/00—Alloys based on antimony or bismuth
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
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- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
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Description
そして、特許文献1には、そのようなPbを含まないはんだを用いた電子装置およびその製造方法が開示されている。
電極上にはんだバンプを形成する方法であって、
主成分としてBiを90質量%より多く含み、副成分としてSnと、CuおよびAgの少なくとも一方とを含むはんだボールを用いて、Niを含む電極上にはんだバンプを形成すること
を特徴としている。
また、本発明のはんだバンプの形成方法においては、前記はんだボールが、Snを1.0質量%以上10.0質量%未満の範囲で含有するものであることが好ましく、さらにSnを1.0質量%以上2.0質量%以下の範囲で含有するものであることが好ましい。
また、はんだフラッシュに対する耐性を向上させることが可能になる。
ここで「はんだフラッシュ」とは、基板へのはんだによる部品実装後アンダーフィルなどの樹脂材による封止後に、再度はんだ材の溶融温度まで加熱した際にはんだ材の溶融膨張によって、はんだ材が、樹脂と部品の界面あるいは樹脂と基板の界面を破壊しながら進展する現象である。はんだフラッシュが発生した場合、以下のような看過できない問題の発生するおそれがある。すなわち、例えば2部品の電極間を繋ぐようにはんだが進展した場合には電極間ショートの不具合を発生し、また、部品が備える電極と基板が備える実装用電極とを接続する接合部のはんだが流失した場合にはオープン不良が発生するなど、製品の信頼性に大きな影響を与えることが懸念される。
本発明のはんだバンプの形成方法においては、主成分としてBiを90質量%より多く含み、副成分としてSnと、CuおよびAgの少なくとも一方とを含むはんだを用いて、Niを含む電極上にはんだバンプを形成する。
具体的には、例えば、はんだを構成する各金属材料(Biと、Snと、CuおよびAgの少なくとも一方と)を一度溶融させて略球状に成形したはんだボールをNiを含む電極上に供給し、Biの融点(271℃)を超える温度(例えば300℃)にまで加熱して、はんだボールを溶融させることにより、Niを含む電極上にはんだバンプを形成する。この方法で形成されたはんだバンプは、形状精度が高く、表面が滑らかで光沢があり、形成状態の検査などの外観検査を、イメージセンサーを用いる方法などの光学的な方法により効率よく、確実に行うことができる。
また、本発明の方法で形成されたはんだバンプは、形状精度が高く、表面が滑らかであることから、それを利用してはんだ付けを行った場合、信頼性の高いはんだ付けを行うことができる。
また、Niを含む電極は、Niからなる電極に限らず、Niからなる電極層の表面に、濡れ性を向上させるための金属めっき膜や有機膜を形成したり、防錆処理などの表面処理を施したりした電極や、Cuからなる電極上にNiめっき膜を形成してなる電極などを含む広い概念である。
この実施形態では、はんだボールをICチップのNiを含む電極上に載置し、加熱してはんだボールを溶融させることにより、Niを含む電極上にはんだバンプを形成する場合を例にとって説明する。
(1)はんだボールを作製するにあたっては、まず、Niを含む電極上にはんだバンプを形成する際に用いるはんだボールを作製する。
はんだボールの組成は、基本的には、Bi−xSn−0.15Cuとした。そして、xの値を、0.0〜20.0質量%の範囲で変化させた。Biの割合(質量%)は、100から、Snについてのxの値(質量%の値)およびCuの質量%の値(0.15)を差し引いた値となる。
なお、各試料(試料1〜15)のBi、Sn、およびCuの具体的な割合は、表1に示すとおりである。
このようにして作製されたはんだボール4は、図1に模式的な構成を示し、図2に顕微鏡写真を示すように、母材であるBi21に、Sn22が分散した構造を有している。
次に、はんだバンプの形成方法について説明する。
そして、イメージセンサーにて、はんだバンプ5の形成状態(搭載状態)を確認した。
次に、はんだバンプの形成されたICチップをプリント回路基板に搭載して実装し、プリント回路基板(ガラスエポキシ基板)11の実装用電極12上に、はんだバンプ5を介してICチップ1が実装された構造体を形成する方法について説明する。
まず、外観検査に使用したはんだバンプ部を断面研磨し、走査型電子顕微鏡(SEM)を使用して500倍で観察した。
また、Bi−Ni金属間化合物層とBi相を、SEMのEDSにより同定し、Bi−Ni金属間化合物層が連続する最大長さを測定した。
そして、各試料において、それぞれ5個のバンプについて、Bi−Ni金属間化合物層が連続する最大長さを測定し、各バンプにおける、Bi−Ni金属間化合物層が連続する最大長さの値を測定数5で除して平均した長さを「Bi−Ni金属間化合物の最大長さ」とした。
2 ICチップの電極
2a ICチップの電極を構成するCu層
2b ICチップの電極を構成するNi層
2c ICチップの電極を構成するAu層
3 フラックス
4 はんだボール
5 はんだバンプ
10 針状結晶
11 プリント回路基板
12 プリント回路基板の実装用電極
12a プリント回路基板を構成するCu層
12b プリント回路基板を構成するNi層
12c プリント回路基板を構成するAu層
21 Bi
22 Sn
30 NiSn化合物層
Claims (5)
- 電極上にはんだバンプを形成する方法であって、
主成分としてBiを90質量%より多く含み、副成分としてSnと、CuおよびAgの少なくとも一方とを含むはんだボールを用いて、Niを含む電極上にはんだバンプを形成すること
を特徴とするはんだバンプの形成方法。 - 前記はんだボールが、Snを1.0質量%以上10.0質量%未満の範囲で含有するものであることを特徴とする、請求項1記載のはんだバンプの形成方法。
- 前記はんだボールが、CuおよびAgの少なくとも一方を1.0質量%以下の範囲で含有するものであることを特徴とする、請求項1または2記載のはんだバンプの形成方法。
- 主成分としてBiを90質量%より多く含むとともに、副成分としてSnと、CuおよびAgの少なくとも一方とを含み、Niを含む電極上に形成されていることを特徴とするはんだバンプ。
- 内部に局所的にSn単体およびSnBi共晶合金層の少なくとも一方を有していることを特徴とする請求項4記載のはんだバンプ。
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WO2020136979A1 (ja) * | 2018-12-28 | 2020-07-02 | Jx金属株式会社 | はんだ接合部 |
US11088308B2 (en) * | 2019-02-25 | 2021-08-10 | Tdk Corporation | Junction structure |
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JP5470816B2 (ja) * | 2008-11-26 | 2014-04-16 | 富士通株式会社 | 電子装置の製造方法 |
JP5533665B2 (ja) * | 2008-11-28 | 2014-06-25 | 富士通株式会社 | 電子装置の製造方法、電子部品搭載用基板及びその製造方法 |
JP5526997B2 (ja) | 2010-05-10 | 2014-06-18 | 住友金属鉱山株式会社 | Bi系はんだ接合用の電子部品と基板及び電子部品実装基板 |
JP2014146635A (ja) * | 2013-01-28 | 2014-08-14 | Murata Mfg Co Ltd | はんだ接合方法およびはんだボールと電極との接合構造体 |
JP6028593B2 (ja) * | 2013-01-28 | 2016-11-16 | 富士通株式会社 | 半導体装置の製造方法 |
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