JP6274729B2 - 固体撮像装置およびカメラ - Google Patents

固体撮像装置およびカメラ Download PDF

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Publication number
JP6274729B2
JP6274729B2 JP2013019884A JP2013019884A JP6274729B2 JP 6274729 B2 JP6274729 B2 JP 6274729B2 JP 2013019884 A JP2013019884 A JP 2013019884A JP 2013019884 A JP2013019884 A JP 2013019884A JP 6274729 B2 JP6274729 B2 JP 6274729B2
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JP
Japan
Prior art keywords
layer
solid
imaging device
state imaging
disposed
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Expired - Fee Related
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JP2013019884A
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English (en)
Japanese (ja)
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JP2014154563A (ja
JP2014154563A5 (https=
Inventor
下津佐　峰生
峰生 下津佐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2013019884A priority Critical patent/JP6274729B2/ja
Priority to US14/161,029 priority patent/US9147709B2/en
Publication of JP2014154563A publication Critical patent/JP2014154563A/ja
Publication of JP2014154563A5 publication Critical patent/JP2014154563A5/ja
Application granted granted Critical
Publication of JP6274729B2 publication Critical patent/JP6274729B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2013019884A 2013-02-04 2013-02-04 固体撮像装置およびカメラ Expired - Fee Related JP6274729B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013019884A JP6274729B2 (ja) 2013-02-04 2013-02-04 固体撮像装置およびカメラ
US14/161,029 US9147709B2 (en) 2013-02-04 2014-01-22 Solid-state image sensor and camera

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013019884A JP6274729B2 (ja) 2013-02-04 2013-02-04 固体撮像装置およびカメラ

Publications (3)

Publication Number Publication Date
JP2014154563A JP2014154563A (ja) 2014-08-25
JP2014154563A5 JP2014154563A5 (https=) 2016-03-03
JP6274729B2 true JP6274729B2 (ja) 2018-02-07

Family

ID=51258591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013019884A Expired - Fee Related JP6274729B2 (ja) 2013-02-04 2013-02-04 固体撮像装置およびカメラ

Country Status (2)

Country Link
US (1) US9147709B2 (https=)
JP (1) JP6274729B2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6274567B2 (ja) 2014-03-14 2018-02-07 キヤノン株式会社 固体撮像装置及び撮像システム
JP6598436B2 (ja) * 2014-08-08 2019-10-30 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法
JP2019012739A (ja) * 2017-06-29 2019-01-24 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および撮像装置
DE102018106270B4 (de) * 2017-09-28 2025-03-27 Taiwan Semiconductor Manufacturing Co. Ltd. Bildsensor mit einer oberflächenstruktur mit verbesserter quantenausbeute
KR102534249B1 (ko) 2018-01-12 2023-05-18 삼성전자주식회사 이미지 센서
KR102749135B1 (ko) * 2019-03-06 2025-01-03 삼성전자주식회사 이미지 센서 및 이미징 장치
WO2022124403A1 (ja) * 2020-12-10 2022-06-16 凸版印刷株式会社 固体撮像素子およびその製造方法
WO2022193324A1 (zh) * 2021-03-19 2022-09-22 深圳市汇顶科技股份有限公司 指纹检测装置和电子设备

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4322166B2 (ja) * 2003-09-19 2009-08-26 富士フイルム株式会社 固体撮像素子
JP2007311477A (ja) * 2006-05-17 2007-11-29 Fujifilm Corp 半導体素子及び半導体素子の製造方法
JP5110831B2 (ja) 2006-08-31 2012-12-26 キヤノン株式会社 光電変換装置及び撮像システム
JP5314914B2 (ja) 2008-04-04 2013-10-16 キヤノン株式会社 光電変換装置、撮像システム、設計方法、及び光電変換装置の製造方法
JP2010161236A (ja) 2009-01-08 2010-07-22 Canon Inc 光電変換装置の製造方法
JP2010206181A (ja) 2009-02-06 2010-09-16 Canon Inc 光電変換装置及び撮像システム
JP2010271049A (ja) 2009-05-19 2010-12-02 Sony Corp ２次元固体撮像装置
JP2011238688A (ja) * 2010-05-07 2011-11-24 Fujifilm Corp 固体撮像素子の製造方法
JP2012015283A (ja) * 2010-06-30 2012-01-19 Toshiba Corp 固体撮像装置の製造方法
JP2012084815A (ja) * 2010-10-14 2012-04-26 Sharp Corp 固体撮像装置および電子情報機器
JP5736755B2 (ja) * 2010-12-09 2015-06-17 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5696513B2 (ja) * 2011-02-08 2015-04-08 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP2011135100A (ja) * 2011-03-22 2011-07-07 Sony Corp 固体撮像装置及び電子機器
JP2012227478A (ja) 2011-04-22 2012-11-15 Panasonic Corp 固体撮像装置
JP4872024B1 (ja) 2011-04-22 2012-02-08 パナソニック株式会社 固体撮像装置およびその製造方法
CN103022062B (zh) * 2011-07-19 2016-12-21 索尼公司 固体摄像器件及其制造方法和电子设备
JP5991729B2 (ja) * 2011-10-07 2016-09-14 キヤノン株式会社 固体撮像装置の製造方法
JP6124502B2 (ja) 2012-02-29 2017-05-10 キヤノン株式会社 固体撮像装置およびその製造方法
JP2014175553A (ja) * 2013-03-11 2014-09-22 Canon Inc 固体撮像装置およびカメラ

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Publication number Publication date
JP2014154563A (ja) 2014-08-25
US9147709B2 (en) 2015-09-29
US20140217538A1 (en) 2014-08-07

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