JP6273651B2 - 可視光通信システム - Google Patents
可視光通信システム Download PDFInfo
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- JP6273651B2 JP6273651B2 JP2014525680A JP2014525680A JP6273651B2 JP 6273651 B2 JP6273651 B2 JP 6273651B2 JP 2014525680 A JP2014525680 A JP 2014525680A JP 2014525680 A JP2014525680 A JP 2014525680A JP 6273651 B2 JP6273651 B2 JP 6273651B2
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- 238000004891 communication Methods 0.000 title claims description 91
- 230000003287 optical effect Effects 0.000 claims description 115
- 239000004065 semiconductor Substances 0.000 claims description 101
- 150000004767 nitrides Chemical class 0.000 claims description 73
- 239000013078 crystal Substances 0.000 claims description 31
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000010408 film Substances 0.000 claims description 11
- 229910052693 Europium Inorganic materials 0.000 claims description 6
- 229910003564 SiAlON Inorganic materials 0.000 claims description 6
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
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- 102100032047 Alsin Human genes 0.000 claims description 3
- 101710187109 Alsin Proteins 0.000 claims description 3
- 229910052792 caesium Inorganic materials 0.000 claims description 3
- -1 cesium activated yttrium aluminum garnet Chemical class 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 description 63
- 239000000758 substrate Substances 0.000 description 30
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- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 13
- 238000001228 spectrum Methods 0.000 description 12
- 230000010355 oscillation Effects 0.000 description 11
- 229910002601 GaN Inorganic materials 0.000 description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- 238000000295 emission spectrum Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
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- 238000002310 reflectometry Methods 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
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- 230000003071 parasitic effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
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- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
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- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
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- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 1
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- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/90—Methods of manufacture
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
- F21V13/02—Combinations of only two kinds of elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
- H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/11—Arrangements specific to free-space transmission, i.e. transmission through air or vacuum
- H04B10/114—Indoor or close-range type systems
- H04B10/116—Visible light communication
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0078—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for frequency filtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0215—Bonding to the substrate
- H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
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- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- General Engineering & Computer Science (AREA)
- Signal Processing (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Networks & Wireless Communication (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Lasers (AREA)
- Optical Communication System (AREA)
Description
図1は、本開示の第1の実施形態における可視光通信システムの構成を示す図である。図2、図3及び図4は、本実施形態における可視光通信システムの効果を説明する図である。
次に、本開示の第2の実施形態について説明する。
からなる。波長変換部30は、面発光レーザ103からの青色波長帯のレーザ光の一部を吸収し、波長490nmから660nmである緑色から赤色波長帯の蛍光を放射する。
これにより、従来の白色LEDを用いた可視光通信システムでは困難であった超高速の光
通信を実現することができる。
続いて、本発明の実施の形態3の可視光通信システムについて、図7を参照しながら説明する。図7は、実施の形態3の可視光通信システムにも用いられる面発光レーザアレイ素子を示す図である。尚、実施の形態3に示す面発光レーザアレイ素子の構成において、実施の形態2に示す面発光レーザアレイ素子と重複する部分があるので、以下では主に異なる点について説明する。
次に、本開示の第4の実施形態の可視光通信システムについて、図8を参照しながら説明する。
次に、本開示の第5の実施形態の可視光通信システムについて、図9を参照しながら説明する。
10 光送信装置
12 半導体レーザ素子
30 波長変換部
31 蛍光体
40 パッケージ
51 光受信装置
60 受光素子
70 光学フィルタ
80 パッケージ
102 面発光レーザアレイ素子
103 面発光レーザ
104 蛍光体
105 光受信装置
106 受光素子
107 光学フィルタ
108 送信信号
109 受信信号
110 光送信装置
120 基板
121 第1のn型窒化物半導体層
125 第1の高光反射層
126 第2のn型窒化物半導体層
127 活性層
128 窒化物半導体電子障壁層
129 p型窒化物半導体層
130 絶縁層
131 透明電極
132 pコンタクト電極
133 第2の高光反射層
134 開口部
135 pパッド電極
137 開口部
138 nコンタクト電極
139 nパッド電極
190 電力
191 送信電気信号
192 送信光信号
193 蛍光
194 送信光信号
195 受信光信号
196 受信電気信号
202 面発光レーザアレイ素子
203 面発光レーザ
240 絶縁層(樹脂層)
241 nコンタクト電極
242 第1の高光反射層
243 配線電極
245 光拡散部
251 導電性支持基板
252 接合金属
253 基板側電極
260 nパッド電極
502 面発光レーザアレイ素子
503 面発光レーザ
542 第2の高光反射層
550 長方格子金属ホールアレイ
550a 微小開口部
Claims (9)
- 波長440nmから450nmの範囲にピーク波長を有するIII族窒化物半導体レーザ素子と、前記III族窒化物半導体レーザ素子の光出射面側に配置され、蛍光体を有する波長変換部とを有する光送信装置と、
前記蛍光体からの発光を除去する波長フィルタと、前記波長フィルタを介して前記III族窒化物半導体レーザ素子からの発光を受光する受光素子と、
前記受光素子を内部に保持し、前記III族窒化物半導体レーザ素子からの光を通過させる開口部を備えるパッケージとを備え、
前記波長フィルタは、前記パッケージの前記開口部に配置され、且つ、前記受光素子の受光面から離れていることを特徴とする可視光通信システム。 - 請求項1において、
前記III族窒化物半導体レーザ素子は、複数のIII族窒化物半導体面発光レーザを含む面発光レーザアレイ素子であることを特徴とする可視光通信システム。 - 請求項2において、
前記III族窒化物半導体面発光レーザを構成する窒化物半導体積層膜の積層方向は、c軸から傾斜した結晶軸の方向であることを特徴とする可視光通信システム。 - 請求項3において、
前記結晶軸は、m軸であることを特徴とする可視光通信システム。 - 請求項2〜4のいずれか1つにおいて、
前記III族窒化物半導体面発光レーザは、光出射部に、長方格子状に配列する微小開口が形成された金属薄膜を備えることを特徴とする可視光通信システム。 - 請求項2〜5のいずれか1つにおいて、
前記III族窒化物半導体面発光レーザは、光出射部に、光拡散素子を備えることを特徴とする可視光通信システム。 - 請求項6において、
前記光拡散素子は、凸レンズであることを特徴とする可視光通信システム。 - 請求項2〜7のいずれか1つにおいて、
前記III族窒化物半導体面発光レーザの素子間には、III族窒化物半導体よりも誘電率の小さい樹脂層が形成されていることを特徴とする可視光通信システム。 - 請求項1〜8のいずれか1つにおいて、
前記蛍光体は、セシウム付活イットリウム・アルミニウム・ガーネット(YAG:Ce)であるか、又は、ユーロピウム付活SiAlON(SiAlON:Eu)とユーロピウム付活(Sr,Ca)AlSiN3結晶とを混合したものであることを特徴とする可視光通信システム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012159225 | 2012-07-18 | ||
JP2012159225 | 2012-07-18 | ||
PCT/JP2013/001957 WO2014013639A1 (ja) | 2012-07-18 | 2013-03-22 | 可視光通信システム |
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JPWO2014013639A1 JPWO2014013639A1 (ja) | 2016-06-30 |
JP6273651B2 true JP6273651B2 (ja) | 2018-02-07 |
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JP2014525680A Expired - Fee Related JP6273651B2 (ja) | 2012-07-18 | 2013-03-22 | 可視光通信システム |
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US (1) | US9447933B2 (ja) |
JP (1) | JP6273651B2 (ja) |
WO (1) | WO2014013639A1 (ja) |
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JP6119490B2 (ja) | 2013-07-31 | 2017-04-26 | ソニー株式会社 | 光源装置、および表示装置 |
JP6459456B2 (ja) * | 2014-12-05 | 2019-01-30 | 大日本印刷株式会社 | 光通信システムおよび照明装置 |
EP3886343A3 (en) | 2015-05-18 | 2021-11-24 | Lasermotive, Inc. | Multi-layered safety system |
JP6687828B2 (ja) * | 2015-08-06 | 2020-04-28 | ダイトロン株式会社 | 空間光伝送装置 |
JP6692682B2 (ja) * | 2016-04-21 | 2020-05-13 | スタンレー電気株式会社 | 面発光レーザ装置及びその製造方法 |
DE102016219200A1 (de) * | 2016-10-04 | 2018-04-05 | Tridonic Gmbh & Co Kg | Integrierte Anordnung modulierbarer Lichtpunkte für Kommunikation mittels sichtbarem Licht |
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US11757250B2 (en) | 2019-12-23 | 2023-09-12 | Kyocera Sld Laser, Inc. | Specialized mobile light device configured with a gallium and nitrogen containing laser source |
US20220060260A1 (en) * | 2020-08-24 | 2022-02-24 | Tdk Corporation | Transmission device, information terminal, communication system, and communication method |
CA3130380A1 (en) | 2020-09-10 | 2022-03-10 | Saco Technologies Inc. | Light shaping assembly having light sources mounted on a pcb via supporting pins bent for orienting light toward a projector lens |
DE102021113021A1 (de) * | 2021-05-19 | 2022-11-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaservorrichtung und optoelektronisches bauelement |
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JP3465017B2 (ja) * | 2002-04-23 | 2003-11-10 | 学校法人慶應義塾 | 照明光送信装置、照明光受信装置及び蛍光体タイプ照明光通信システム |
JP4057468B2 (ja) | 2003-06-03 | 2008-03-05 | シャープ株式会社 | 光伝送機構を備えた照明装置 |
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JP2007266484A (ja) * | 2006-03-29 | 2007-10-11 | Sharp Corp | アイセーフレーザ光源装置およびそれを用いた通信機器ならびに照明機器 |
JP2008159806A (ja) * | 2006-12-22 | 2008-07-10 | Sharp Corp | 半導体発光装置およびその製造方法 |
US20080197378A1 (en) * | 2007-02-20 | 2008-08-21 | Hua-Shuang Kong | Group III Nitride Diodes on Low Index Carrier Substrates |
JP2008277780A (ja) * | 2007-04-02 | 2008-11-13 | Seiko Epson Corp | 面発光レーザアレイおよびその製造方法ならびに半導体装置 |
US20080240196A1 (en) * | 2007-04-02 | 2008-10-02 | Seiko Epson Corporation | Surface emitting laser array, method for manufacturing the same, and semiconductor device |
JP2009077344A (ja) * | 2007-09-25 | 2009-04-09 | Momo Alliance Co Ltd | 可視光通信システム |
JP5002408B2 (ja) * | 2007-10-17 | 2012-08-15 | 株式会社フジクラ | 照明装置 |
JP5409210B2 (ja) * | 2009-09-01 | 2014-02-05 | 学校法人金沢工業大学 | 半導体発光素子 |
JP2011146650A (ja) * | 2010-01-18 | 2011-07-28 | Sumitomo Electric Ind Ltd | GaN系半導体発光素子およびその製造方法 |
JP5399975B2 (ja) * | 2010-05-14 | 2014-01-29 | 太陽誘電株式会社 | 可視光通信用受信機、可視光通信システム、及び可視光通信方法 |
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