JP6263628B2 - フリップチップｌｅｄ用のフレームベースのパッケージ - Google Patents

フリップチップｌｅｄ用のフレームベースのパッケージ Download PDF

Info

Publication number
JP6263628B2
JP6263628B2 JP2016542405A JP2016542405A JP6263628B2 JP 6263628 B2 JP6263628 B2 JP 6263628B2 JP 2016542405 A JP2016542405 A JP 2016542405A JP 2016542405 A JP2016542405 A JP 2016542405A JP 6263628 B2 JP6263628 B2 JP 6263628B2
Authority
JP
Japan
Prior art keywords
light emitting
substrate
frame
cap
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016542405A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016536804A5 (enExample
JP2016536804A (ja
Inventor
アンドリュー ストックマン，スティーヴン
アンドリュー ストックマン，スティーヴン
サンベル，マルク アンドレ ド
サンベル，マルク アンドレ ド
ボリショヴィチ シュシェチン，オレグ
ボリショヴィチ シュシェチン，オレグ
アントニウス マリア スウェーヘルス，ノルベルテュス
アントニウス マリア スウェーヘルス，ノルベルテュス
シャティル ハーク，アシム
シャティル ハーク，アシム
マルティノフ，ユーリィ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips NV filed Critical Koninklijke Philips NV
Publication of JP2016536804A publication Critical patent/JP2016536804A/ja
Publication of JP2016536804A5 publication Critical patent/JP2016536804A5/ja
Application granted granted Critical
Publication of JP6263628B2 publication Critical patent/JP6263628B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
JP2016542405A 2013-09-13 2014-08-28 フリップチップｌｅｄ用のフレームベースのパッケージ Active JP6263628B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361877434P 2013-09-13 2013-09-13
US61/877,434 2013-09-13
US201461936360P 2014-02-06 2014-02-06
US61/936,360 2014-02-06
PCT/IB2014/064106 WO2015036887A1 (en) 2013-09-13 2014-08-28 Frame based package for flip-chip led

Publications (3)

Publication Number Publication Date
JP2016536804A JP2016536804A (ja) 2016-11-24
JP2016536804A5 JP2016536804A5 (enExample) 2017-07-27
JP6263628B2 true JP6263628B2 (ja) 2018-01-17

Family

ID=51743501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016542405A Active JP6263628B2 (ja) 2013-09-13 2014-08-28 フリップチップｌｅｄ用のフレームベースのパッケージ

Country Status (6)

Country Link
US (2) US9698323B2 (enExample)
EP (1) EP3044809B1 (enExample)
JP (1) JP6263628B2 (enExample)
KR (1) KR102264061B1 (enExample)
CN (1) CN105706237B (enExample)
WO (1) WO2015036887A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3044809B1 (en) * 2013-09-13 2019-04-24 Lumileds Holding B.V. Frame based package for flip-chip led
EP3093894B1 (en) * 2015-05-15 2020-08-05 OSRAM GmbH A method of producing lighting devices and corresponding device
US10763404B2 (en) * 2015-10-05 2020-09-01 Maven Optronics Co., Ltd. Light emitting device with beveled reflector and manufacturing method of the same
JP2017116372A (ja) * 2015-12-24 2017-06-29 日東電工株式会社 蛍光体層付光半導体素子の検査方法
US11424396B2 (en) 2015-12-29 2022-08-23 Lumileds Llc Flip chip LED with side reflectors and phosphor
CN109983589B (zh) 2015-12-29 2022-04-12 亮锐控股有限公司 具有侧面反射器和磷光体的倒装芯片led
DE102016104202A1 (de) 2016-03-08 2017-09-14 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
DE102016112293A1 (de) * 2016-07-05 2018-01-11 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines optoelektronischen bauelements und optoelektronisches bauelement
DE102016115629A1 (de) 2016-08-23 2018-03-01 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines optoelektronischen bauelements
WO2018036618A1 (en) * 2016-08-23 2018-03-01 Osram Opto Semiconductors Gmbh Method for producing a plurality of optoelectronic devices and optoelectronic device
DE102017103328A1 (de) * 2017-02-17 2018-08-23 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Konversionsvorrichtung mit einem Konversionselement und einer Streumaterialbeschichtung
KR20190033979A (ko) * 2017-09-22 2019-04-01 주식회사 루멘스 색 변환 전극부를 갖는 수직형 발광소자
KR20190051205A (ko) * 2017-11-06 2019-05-15 주식회사 루멘스 엘이디 패키지
DE102017130574A1 (de) * 2017-12-19 2019-06-19 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Konversionselements und Konversionselement
EP3543776B1 (en) * 2018-03-23 2024-06-26 Maven Optronics Co., Ltd. Chip-scale linear light-emitting device
DE102018121338A1 (de) 2018-08-31 2020-03-05 Osram Opto Semiconductors Gmbh Optoelektronische leuchtvorrichtung, optoelektronische beleuchtungseinrichtung und herstellungsverfahren
CN111969089A (zh) * 2020-08-27 2020-11-20 昆山兴协和光电科技有限公司 一种小角度发光装置及其制造方法
JP7594881B2 (ja) * 2020-10-22 2024-12-05 スタンレー電気株式会社 半導体発光装置及び半導体発光モジュール
JP7621783B2 (ja) 2020-12-10 2025-01-27 スタンレー電気株式会社 半導体発光装置及び半導体発光素子の支持基板
DE102022112418A1 (de) * 2022-05-18 2023-11-23 Ams-Osram International Gmbh Optoelektronische vorrichtung und verfahren zur herstellung einer optoelektronischen vorrichtung

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5824186A (en) * 1993-12-17 1998-10-20 The Regents Of The University Of California Method and apparatus for fabricating self-assembling microstructures
US6184544B1 (en) * 1998-01-29 2001-02-06 Rohm Co., Ltd. Semiconductor light emitting device with light reflective current diffusion layer
DE10041328B4 (de) * 2000-08-23 2018-04-05 Osram Opto Semiconductors Gmbh Verpackungseinheit für Halbleiterchips
JP4280050B2 (ja) 2002-10-07 2009-06-17 シチズン電子株式会社 白色発光装置
JP2004192720A (ja) * 2002-12-11 2004-07-08 Sankyo Seiki Mfg Co Ltd 光ヘッド装置
US7517728B2 (en) * 2004-03-31 2009-04-14 Cree, Inc. Semiconductor light emitting devices including a luminescent conversion element
US7456499B2 (en) * 2004-06-04 2008-11-25 Cree, Inc. Power light emitting die package with reflecting lens and the method of making the same
CN101138094B (zh) * 2005-03-09 2010-10-13 旭化成电子材料元件株式会社 光学器件及光学器件的制造方法
CN100394621C (zh) * 2005-07-29 2008-06-11 东莞市福地电子材料有限公司 氮化镓基发光二极管芯片的制造方法
WO2007147278A2 (de) * 2006-06-21 2007-12-27 Gerhard Staufert Led-lichtquelle und verfahren
US7791096B2 (en) * 2007-06-08 2010-09-07 Koninklijke Philips Electronics N.V. Mount for a semiconductor light emitting device
KR101517644B1 (ko) * 2007-11-29 2015-05-04 니치아 카가쿠 고교 가부시키가이샤 발광장치 및 그 제조방법
CN102149965B (zh) * 2008-09-05 2016-08-31 皇家飞利浦电子股份有限公司 灯总成
US20100207140A1 (en) 2009-02-19 2010-08-19 Koninklijke Philips Electronics N.V. Compact molded led module
JP5326705B2 (ja) * 2009-03-17 2013-10-30 日亜化学工業株式会社 発光装置
CN101587933B (zh) * 2009-07-07 2010-12-08 苏州晶方半导体科技股份有限公司 发光二极管的晶圆级封装结构及其制造方法
DE102009036621B4 (de) 2009-08-07 2023-12-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
KR101039881B1 (ko) * 2009-12-21 2011-06-09 엘지이노텍 주식회사 발광소자 및 그를 이용한 라이트 유닛
KR100986571B1 (ko) * 2010-02-04 2010-10-07 엘지이노텍 주식회사 발광소자 패키지 및 그 제조방법
DE102010025319B4 (de) 2010-06-28 2022-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines oberflächenmontierbaren Halbleiterbauelements und oberflächenmontierbare Halbleiterbauelemente
US20120074434A1 (en) * 2010-09-24 2012-03-29 Jun Seok Park Light emitting device package and lighting apparatus using the same
JP5840377B2 (ja) * 2011-04-14 2016-01-06 日東電工株式会社 反射樹脂シートおよび発光ダイオード装置の製造方法
JP5745319B2 (ja) * 2011-04-14 2015-07-08 日東電工株式会社 蛍光反射シート、および、発光ダイオード装置の製造方法
KR20130014256A (ko) * 2011-07-29 2013-02-07 엘지이노텍 주식회사 발광 소자 패키지 및 이를 이용한 조명 시스템
KR101219106B1 (ko) * 2011-08-01 2013-01-11 삼성전자주식회사 발광소자 패키지 및 그 제조방법
WO2013056927A1 (de) * 2011-10-20 2013-04-25 Osram Gmbh Aufsatzstück für einen träger einer halbleiterleuchtvorrichtung
JP2013118210A (ja) * 2011-12-01 2013-06-13 Citizen Holdings Co Ltd 半導体発光装置及びその製造方法
CN104125902B (zh) * 2011-12-02 2018-04-06 电力科技控股有限责任公司 用于混合车辆中的燃料优化的系统和方法
WO2013112435A1 (en) * 2012-01-24 2013-08-01 Cooledge Lighting Inc. Light - emitting devices having discrete phosphor chips and fabrication methods
JP2014112669A (ja) * 2012-11-12 2014-06-19 Citizen Holdings Co Ltd 半導体発光装置及びその製造方法
CN105453277B (zh) * 2013-07-30 2018-01-30 国立研究开发法人情报通信研究机构 半导体发光元件及其制造方法
EP3044809B1 (en) * 2013-09-13 2019-04-24 Lumileds Holding B.V. Frame based package for flip-chip led
WO2015119858A1 (en) * 2014-02-05 2015-08-13 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods

Also Published As

Publication number Publication date
EP3044809A1 (en) 2016-07-20
EP3044809B1 (en) 2019-04-24
WO2015036887A1 (en) 2015-03-19
CN105706237B (zh) 2019-10-18
JP2016536804A (ja) 2016-11-24
KR20160055880A (ko) 2016-05-18
US20160240755A1 (en) 2016-08-18
US20170301841A1 (en) 2017-10-19
US9698323B2 (en) 2017-07-04
KR102264061B1 (ko) 2021-06-14
CN105706237A (zh) 2016-06-22

Similar Documents

Publication Publication Date Title
JP6263628B2 (ja) フリップチップｌｅｄ用のフレームベースのパッケージ
CN104737307B (zh) 用于制造多个光电子半导体构件的方法
US6881980B1 (en) Package structure of light emitting diode
EP2666193B1 (en) Led package comprising encapsulation
KR102146595B1 (ko) 측면 방출을 위한 형상의 성장 기판을 가지는 led
US10101518B2 (en) Integrated back light unit
JP2014158028A (ja) 発光ダイオードのサブマウント及びそれを用いる発光装置の製造方法
KR20120119395A (ko) 발광소자 패키지 및 그 제조방법
JP6549043B2 (ja) 底面反射器を用いたカプセル化のためのｌｅｄレンズ
TW201322501A (zh) 具有形成於溝槽中之反射壁之發光二極體混合室
EP3022779B1 (en) Pc led with optical element and without substrate carrier
US9209373B2 (en) High power plastic leaded chip carrier with integrated metal reflector cup and direct heat sink
KR20130127838A (ko) 발광소자 패키지
WO2013118076A1 (en) Low cost encapsulated light-emitting device
JP2016092410A (ja) 発光素子パッケージ、及びこれを含む照明システム
KR100780182B1 (ko) 칩코팅형 ｌｅｄ 패키지 및 그 제조방법
KR20150111103A (ko) 발광 소자 패키지
KR101461153B1 (ko) 반도체 소자 구조물을 제조하는 방법
KR20120075452A (ko) 발광 효율이 개선된 발광 다이오드
KR20150111101A (ko) 발광 소자 패키지
KR20150111105A (ko) 발광 소자 패키지

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160512

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170619

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170619

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20170619

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20170707

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170718

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171016

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20171121

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20171218

R150 Certificate of patent or registration of utility model

Ref document number: 6263628

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250