JP6262156B2 - グラフェン形成のための方法およびシステム - Google Patents

グラフェン形成のための方法およびシステム Download PDF

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JP6262156B2
JP6262156B2 JP2014558853A JP2014558853A JP6262156B2 JP 6262156 B2 JP6262156 B2 JP 6262156B2 JP 2014558853 A JP2014558853 A JP 2014558853A JP 2014558853 A JP2014558853 A JP 2014558853A JP 6262156 B2 JP6262156 B2 JP 6262156B2
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substrate
graphene
cmos compatible
surface treatment
treatment process
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JP2015510489A5 (enExample
JP2015510489A (ja
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エイ ボイド デイビッド
エイ ボイド デイビッド
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California Institute of Technology
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JP2014558853A 2012-02-24 2013-02-22 グラフェン形成のための方法およびシステム Active JP6262156B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201261603104P 2012-02-24 2012-02-24
US61/603,104 2012-02-24
US201261607337P 2012-03-06 2012-03-06
US61/607,337 2012-03-06
US201261677323P 2012-07-30 2012-07-30
US61/677,323 2012-07-30
PCT/US2013/027284 WO2013126671A1 (en) 2012-02-24 2013-02-22 Method and system for graphene formation

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JP2017238223A Division JP6562996B2 (ja) 2012-02-24 2017-12-13 銅材料を銅基板から除去する方法

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JP2015510489A JP2015510489A (ja) 2015-04-09
JP2015510489A5 JP2015510489A5 (enExample) 2016-11-10
JP6262156B2 true JP6262156B2 (ja) 2018-01-17

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JP2017238223A Active JP6562996B2 (ja) 2012-02-24 2017-12-13 銅材料を銅基板から除去する方法

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US (3) US9150418B2 (enExample)
EP (1) EP2817261B1 (enExample)
JP (2) JP6262156B2 (enExample)
KR (1) KR102107382B1 (enExample)
CN (2) CN104136368B (enExample)
SG (3) SG10201908213VA (enExample)
TW (1) TWI552954B (enExample)
WO (1) WO2013126671A1 (enExample)

Cited By (1)

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KR102727835B1 (ko) 2022-10-12 2024-11-08 주식회사 케이비엘러먼트 질소가 도핑된 그래핀 제조 방법

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US9242865B2 (en) 2013-03-05 2016-01-26 Lockheed Martin Corporation Systems and methods for production of graphene by plasma-enhanced chemical vapor deposition
US9458020B2 (en) * 2013-05-06 2016-10-04 Centre National De La Recherche Scientifique Process and device for forming a graphene layer
GB201318463D0 (en) * 2013-08-13 2013-12-04 Medical Res Council Graphene Modification
WO2015149116A1 (en) * 2014-04-04 2015-10-08 Commonwealth Scientific And Industrial Research Organisation Graphene process and product
US10072355B2 (en) * 2014-04-15 2018-09-11 Board Of Regents, The University Of Texas System Methods of forming graphene single crystal domains on a low nucleation site density substrate
US10566104B2 (en) * 2014-07-09 2020-02-18 Daegu Gyeongbuk Institute Of Science And Technology Metal nanowire having core-shell structure coated with graphene, and manufacturing method therefor
CN104211054B (zh) * 2014-09-09 2016-05-18 中国科学院化学研究所 一种可控制备石墨烯的方法
CN104576457A (zh) * 2014-12-26 2015-04-29 常州二维碳素科技有限公司 一种对石墨烯制件进行表面处理的设备及其处理方法
KR101723521B1 (ko) * 2015-02-26 2017-04-05 주성엔지니어링(주) 그래핀 성장 장치
KR101717476B1 (ko) * 2015-02-27 2017-03-27 주성엔지니어링(주) 그래핀 성장 장치
TWI539043B (zh) 2015-07-21 2016-06-21 財團法人工業技術研究院 石墨烯花的形成方法
JP6661189B2 (ja) * 2015-10-02 2020-03-11 国立研究開発法人産業技術総合研究所 グラフェン膜の作製方法
CN105220128B (zh) * 2015-11-16 2018-03-16 哈尔滨工业大学 一种锆合金表面原位垂直生长石墨烯防腐层的制备方法
JP6652770B2 (ja) * 2016-04-04 2020-02-26 株式会社不二越 固体高分子形燃料電池用セパレータの製造方法
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CN106248221A (zh) * 2016-07-19 2016-12-21 中国科学院重庆绿色智能技术研究院 一种基于石墨烯的非制冷红外探测器及原位制作方法
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CN109930133A (zh) * 2019-03-21 2019-06-25 西南大学 一种用于气敏传感的石墨烯氧化锆复合材料的制备方法
CN109975368A (zh) * 2019-03-21 2019-07-05 西南大学 一种用于气敏传感的石墨烯氧化锡复合材料的制备方法
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