JP6256311B2 - 半導体光素子およびその製造方法 - Google Patents

半導体光素子およびその製造方法 Download PDF

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JP6256311B2
JP6256311B2 JP2014232929A JP2014232929A JP6256311B2 JP 6256311 B2 JP6256311 B2 JP 6256311B2 JP 2014232929 A JP2014232929 A JP 2014232929A JP 2014232929 A JP2014232929 A JP 2014232929A JP 6256311 B2 JP6256311 B2 JP 6256311B2
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inp substrate
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JP2016096310A5 (enExample
JP2016096310A (ja
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佳道 森田
佳道 森田
智志 西川
智志 西川
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Mitsubishi Electric Corp
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JP2014232929A 2014-11-17 2014-11-17 半導体光素子およびその製造方法 Active JP6256311B2 (ja)

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JP2014232929A JP6256311B2 (ja) 2014-11-17 2014-11-17 半導体光素子およびその製造方法

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JP2014232929A JP6256311B2 (ja) 2014-11-17 2014-11-17 半導体光素子およびその製造方法

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JP2016096310A5 JP2016096310A5 (enExample) 2017-02-23
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Families Citing this family (5)

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Publication number Priority date Publication date Assignee Title
US11942761B2 (en) 2019-01-09 2024-03-26 Mitsubishi Electric Corporation Optical semiconductor integrated element
WO2021053711A1 (ja) * 2019-09-17 2021-03-25 三菱電機株式会社 半導体レーザ装置
WO2021144916A1 (ja) * 2020-01-16 2021-07-22 三菱電機株式会社 半導体光集積素子およびその製造方法
JP7224539B2 (ja) * 2020-04-27 2023-02-17 三菱電機株式会社 半導体光集積素子
WO2025220175A1 (ja) * 2024-04-18 2025-10-23 三菱電機株式会社 半導体光集積素子および集積チップ

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000193921A (ja) * 1998-12-28 2000-07-14 Nec Corp 変調器集積化レ―ザモジュ―ル
JP4309636B2 (ja) * 2002-10-17 2009-08-05 三菱電機株式会社 半導体レーザおよび光通信用素子
KR100575964B1 (ko) * 2003-12-16 2006-05-02 삼성전자주식회사 광검출기가 모놀리식 집적된 전계 흡수형 광변조 모듈
US20100290489A1 (en) * 2009-05-15 2010-11-18 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. electro-absorption modulated laser (eml) assembly having a 1/4 wavelength phase shift located in the forward portion of the distributed feedback (dfb) of the eml assembly, and a method
JP5573386B2 (ja) * 2010-06-10 2014-08-20 三菱電機株式会社 半導体光集積素子及びその製造方法

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