JP6256311B2 - 半導体光素子およびその製造方法 - Google Patents
半導体光素子およびその製造方法 Download PDFInfo
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- JP6256311B2 JP6256311B2 JP2014232929A JP2014232929A JP6256311B2 JP 6256311 B2 JP6256311 B2 JP 6256311B2 JP 2014232929 A JP2014232929 A JP 2014232929A JP 2014232929 A JP2014232929 A JP 2014232929A JP 6256311 B2 JP6256311 B2 JP 6256311B2
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- 239000004065 semiconductor Substances 0.000 title claims description 91
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- 230000000903 blocking effect Effects 0.000 description 26
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- 239000013307 optical fiber Substances 0.000 description 8
- 230000005855 radiation Effects 0.000 description 8
- 230000007423 decrease Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 4
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014232929A JP6256311B2 (ja) | 2014-11-17 | 2014-11-17 | 半導体光素子およびその製造方法 |
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| Application Number | Priority Date | Filing Date | Title |
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| JP2014232929A JP6256311B2 (ja) | 2014-11-17 | 2014-11-17 | 半導体光素子およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016096310A JP2016096310A (ja) | 2016-05-26 |
| JP2016096310A5 JP2016096310A5 (enrdf_load_stackoverflow) | 2017-02-23 |
| JP6256311B2 true JP6256311B2 (ja) | 2018-01-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2014232929A Active JP6256311B2 (ja) | 2014-11-17 | 2014-11-17 | 半導体光素子およびその製造方法 |
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| JP (1) | JP6256311B2 (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11942761B2 (en) | 2019-01-09 | 2024-03-26 | Mitsubishi Electric Corporation | Optical semiconductor integrated element |
| WO2021053711A1 (ja) * | 2019-09-17 | 2021-03-25 | 三菱電機株式会社 | 半導体レーザ装置 |
| WO2021144916A1 (ja) * | 2020-01-16 | 2021-07-22 | 三菱電機株式会社 | 半導体光集積素子およびその製造方法 |
| JP7224539B2 (ja) * | 2020-04-27 | 2023-02-17 | 三菱電機株式会社 | 半導体光集積素子 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000193921A (ja) * | 1998-12-28 | 2000-07-14 | Nec Corp | 変調器集積化レ―ザモジュ―ル |
| JP4309636B2 (ja) * | 2002-10-17 | 2009-08-05 | 三菱電機株式会社 | 半導体レーザおよび光通信用素子 |
| KR100575964B1 (ko) * | 2003-12-16 | 2006-05-02 | 삼성전자주식회사 | 광검출기가 모놀리식 집적된 전계 흡수형 광변조 모듈 |
| US20100290489A1 (en) * | 2009-05-15 | 2010-11-18 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | electro-absorption modulated laser (eml) assembly having a 1/4 wavelength phase shift located in the forward portion of the distributed feedback (dfb) of the eml assembly, and a method |
| JP5573386B2 (ja) * | 2010-06-10 | 2014-08-20 | 三菱電機株式会社 | 半導体光集積素子及びその製造方法 |
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| Publication number | Publication date |
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| JP2016096310A (ja) | 2016-05-26 |
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