JP6254348B2 - 光電変換装置 - Google Patents

光電変換装置 Download PDF

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Publication number
JP6254348B2
JP6254348B2 JP2013006813A JP2013006813A JP6254348B2 JP 6254348 B2 JP6254348 B2 JP 6254348B2 JP 2013006813 A JP2013006813 A JP 2013006813A JP 2013006813 A JP2013006813 A JP 2013006813A JP 6254348 B2 JP6254348 B2 JP 6254348B2
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JP
Japan
Prior art keywords
silicon substrate
oxide
semiconductor layer
electrode
silicon
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Expired - Fee Related
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JP2013006813A
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English (en)
Japanese (ja)
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JP2013254932A (ja
JP2013254932A5 (https=
Inventor
良信 浅見
良信 浅見
李甫 堅石
李甫 堅石
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2013006813A priority Critical patent/JP6254348B2/ja
Publication of JP2013254932A publication Critical patent/JP2013254932A/ja
Publication of JP2013254932A5 publication Critical patent/JP2013254932A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H10F77/223—Arrangements for electrodes of back-contact photovoltaic cells for metallisation wrap-through [MWT] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Photovoltaic Devices (AREA)
JP2013006813A 2012-01-18 2013-01-18 光電変換装置 Expired - Fee Related JP6254348B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013006813A JP6254348B2 (ja) 2012-01-18 2013-01-18 光電変換装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2012007650 2012-01-18
JP2012007650 2012-01-18
JP2012107483 2012-05-09
JP2012107483 2012-05-09
JP2013006813A JP6254348B2 (ja) 2012-01-18 2013-01-18 光電変換装置

Publications (3)

Publication Number Publication Date
JP2013254932A JP2013254932A (ja) 2013-12-19
JP2013254932A5 JP2013254932A5 (https=) 2016-01-21
JP6254348B2 true JP6254348B2 (ja) 2017-12-27

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ID=48779133

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013006813A Expired - Fee Related JP6254348B2 (ja) 2012-01-18 2013-01-18 光電変換装置

Country Status (3)

Country Link
US (1) US20130180577A1 (https=)
JP (1) JP6254348B2 (https=)
CN (1) CN103219398B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI469380B (zh) * 2013-11-08 2015-01-11 Ind Tech Res Inst 異質接面太陽電池結構
JP6305105B2 (ja) * 2014-02-27 2018-04-04 日立造船株式会社 太陽電池
CN107425083A (zh) * 2017-07-26 2017-12-01 顺德中山大学太阳能研究院 一种叠层背钝化太阳能电池及其制备方法
CN109786503A (zh) * 2018-12-29 2019-05-21 浙江师范大学 用氧化钼对单晶硅表面进行钝化的方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4217428A1 (de) * 1991-12-09 1993-06-17 Deutsche Aerospace Hochleistungs-solarzellenstruktur
JP3271990B2 (ja) * 1997-03-21 2002-04-08 三洋電機株式会社 光起電力素子及びその製造方法
US7382421B2 (en) * 2004-10-12 2008-06-03 Hewlett-Packard Development Company, L.P. Thin film transistor with a passivation layer
US7375378B2 (en) * 2005-05-12 2008-05-20 General Electric Company Surface passivated photovoltaic devices
JP4568254B2 (ja) * 2006-07-20 2010-10-27 三洋電機株式会社 太陽電池モジュール
US7968792B2 (en) * 2007-03-05 2011-06-28 Seagate Technology Llc Quantum dot sensitized wide bandgap semiconductor photovoltaic devices & methods of fabricating same
TW200841393A (en) * 2007-04-02 2008-10-16 Miin-Jang Chen Optoelectronic device and method of fabricating the same
JP5277485B2 (ja) * 2007-12-13 2013-08-28 シャープ株式会社 太陽電池の製造方法
KR20090091562A (ko) * 2008-02-25 2009-08-28 엘지전자 주식회사 태양전지 및 그 제조방법
JP5250412B2 (ja) * 2008-12-26 2013-07-31 Ｔｄｋ株式会社 光電変換素子用色素および光電変換素子
US8129216B2 (en) * 2009-04-29 2012-03-06 International Business Machines Corporation Method of manufacturing solar cell with doping patterns and contacts
WO2011035268A2 (en) * 2009-09-18 2011-03-24 Applied Materials, Inc. Threshold adjustment implants for reducing surface recombination in solar cells
JP2011146528A (ja) * 2010-01-14 2011-07-28 Kaneka Corp 多結晶シリコン系太陽電池およびその製造方法
TW201213265A (en) * 2010-08-06 2012-04-01 Du Pont Conductive paste for a solar cell electrode
US20120111399A1 (en) * 2010-11-08 2012-05-10 E. I. Du Pont De Nemours And Company Solar cell electrode
US20120255612A1 (en) * 2011-04-08 2012-10-11 Dieter Pierreux Ald of metal oxide film using precursor pairs with different oxidants
CN102184985B (zh) * 2011-04-30 2013-09-04 常州天合光能有限公司 一种太阳能电池浮动结背面钝化结构及其方法

Also Published As

Publication number Publication date
CN103219398A (zh) 2013-07-24
US20130180577A1 (en) 2013-07-18
JP2013254932A (ja) 2013-12-19
CN103219398B (zh) 2017-09-12

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