JP6249618B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
- Publication number
- JP6249618B2 JP6249618B2 JP2013063935A JP2013063935A JP6249618B2 JP 6249618 B2 JP6249618 B2 JP 6249618B2 JP 2013063935 A JP2013063935 A JP 2013063935A JP 2013063935 A JP2013063935 A JP 2013063935A JP 6249618 B2 JP6249618 B2 JP 6249618B2
- Authority
- JP
- Japan
- Prior art keywords
- lower body
- substrate
- main body
- outside
- discharge pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 title claims description 72
- 238000007599 discharging Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2012-0031327 | 2012-03-27 | ||
KR1020120031327A KR101356208B1 (ko) | 2012-03-27 | 2012-03-27 | 기판 처리 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013207304A JP2013207304A (ja) | 2013-10-07 |
JP6249618B2 true JP6249618B2 (ja) | 2017-12-20 |
Family
ID=49368282
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013063935A Active JP6249618B2 (ja) | 2012-03-27 | 2013-03-26 | 基板処理装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6249618B2 (zh) |
KR (1) | KR101356208B1 (zh) |
CN (1) | CN103367205B (zh) |
TW (1) | TWI569302B (zh) |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3342803B2 (ja) * | 1996-05-30 | 2002-11-11 | 東京エレクトロン株式会社 | 処理装置及び基板搬送方法 |
KR100273230B1 (ko) * | 1997-09-29 | 2001-01-15 | 김영환 | 반도체 공정용 종형 확산로 및 그 운전방법 |
JP4876322B2 (ja) * | 2001-03-30 | 2012-02-15 | 東京エレクトロン株式会社 | ロードロック室、その排気方法及び熱処理装置 |
JP2004103990A (ja) * | 2002-09-12 | 2004-04-02 | Hitachi Kokusai Electric Inc | 半導体製造装置および半導体装置の製造方法 |
JP4860373B2 (ja) * | 2005-09-21 | 2012-01-25 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
JP2008078448A (ja) * | 2006-09-22 | 2008-04-03 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP4438850B2 (ja) * | 2006-10-19 | 2010-03-24 | 東京エレクトロン株式会社 | 処理装置、このクリーニング方法及び記憶媒体 |
JP2011187543A (ja) * | 2010-03-05 | 2011-09-22 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
JP2012004408A (ja) * | 2010-06-18 | 2012-01-05 | Tokyo Electron Ltd | 支持体構造及び処理装置 |
-
2012
- 2012-03-27 KR KR1020120031327A patent/KR101356208B1/ko active IP Right Grant
-
2013
- 2013-03-26 TW TW102110655A patent/TWI569302B/zh active
- 2013-03-26 JP JP2013063935A patent/JP6249618B2/ja active Active
- 2013-03-27 CN CN201310102266.2A patent/CN103367205B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN103367205B (zh) | 2017-05-10 |
KR20130109541A (ko) | 2013-10-08 |
KR101356208B1 (ko) | 2014-01-29 |
TW201403660A (zh) | 2014-01-16 |
CN103367205A (zh) | 2013-10-23 |
TWI569302B (zh) | 2017-02-01 |
JP2013207304A (ja) | 2013-10-07 |
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