JP6248148B2 - オプトエレクトロニクス半導体ボディ、およびオプトエレクトロニクス半導体ボディの製造方法 - Google Patents
オプトエレクトロニクス半導体ボディ、およびオプトエレクトロニクス半導体ボディの製造方法 Download PDFInfo
- Publication number
- JP6248148B2 JP6248148B2 JP2016130510A JP2016130510A JP6248148B2 JP 6248148 B2 JP6248148 B2 JP 6248148B2 JP 2016130510 A JP2016130510 A JP 2016130510A JP 2016130510 A JP2016130510 A JP 2016130510A JP 6248148 B2 JP6248148 B2 JP 6248148B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor body
- substrate
- recess
- optoelectronic semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 127
- 230000005693 optoelectronics Effects 0.000 title claims description 85
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims description 84
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 14
- 230000006835 compression Effects 0.000 claims description 12
- 238000007906 compression Methods 0.000 claims description 12
- 239000002019 doping agent Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 351
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 55
- 229910002601 GaN Inorganic materials 0.000 description 31
- 229910052782 aluminium Inorganic materials 0.000 description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 17
- 229910052738 indium Inorganic materials 0.000 description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 7
- 239000013067 intermediate product Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 230000003595 spectral effect Effects 0.000 description 7
- 230000005670 electromagnetic radiation Effects 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Description
オプトエレクトロニクス半導体ボディのさまざまな実施形態は、最初のエピタキシステップにおいて基板に堆積される被張力(tensioned)層を有する。被張力層は、被張力層に垂直に形成された少なくとも1つの凹部を有する。第2のエピタキシステップにおいて、さらなる層が被張力層に堆積され、さらなる層は少なくとも1つの凹部を満たし、少なくとも部分的に被張力層を覆う。この配置構造では、基板とエピタキシャル積層体との間の張力、もしくはエピタキシャル積層体におけるクラック、またはその両方が減少する。
aw<asかつav<asかつav<aw
aw>asかつav<as
aw<asかつav>as
101 オプトエレクトロニクス部品
102 基板
104 被張力層
106 第1のタイプの凹部
108 さらなる層
110 第2のタイプの凹部
112 バッファ層
114 中間層
118 活性ゾーン
120 p型導電性層
130 n側コンタクトメタライゼーション
132 GaN基板
134 n側シェル層
136 n側導波路
138 p側導波路
140 p側シェル層
142 p側コンタクト層
144 パッシベーション
146 p側コンタクトメタライゼーション
147 レーザファセット
148 パッシベーションの開口部
149 レーザリッジ
150 n側導波路136におけるコンタクトパッド
152 ボンディングワイヤ
160 n側ブラッグミラー
162 p側ブラッグミラー
164 p側コンタクト
166 p側端子層
168 n側端子層
202 擬似基板
204 シード層
400 キャリア
500 完全に加工された半導体ボディ
502 エピタキシャル積層体におけるクラック
Claims (14)
- オプトエレクトロニクス半導体ボディ(100)であって、
− GaNを含む基板(102,132,202)を有し、
− 前記基板(102,132,202)に堆積され、InxAlyGa1−x−yN(0≦x≦0.1、0≦y≦1)からなるシェル層(134)である被張力層(104,134,160)を有し、
前記被張力層(104,134,160)が、前記被張力層に垂直に形成される少なくとも1つの凹部(106,110)を有し、
前記被張力層(104,134,160)にさらなる層(108,136,168)が堆積され、前記さらなる層が、前記少なくとも1つの凹部(106,110)を満たしており、少なくとも部分的に前記被張力層(104,134,160)を覆っており、
前記InAlGaNシェル層(134)と、前記基板(132)との間に、InxGa1−xN(0≦x≦0.5)からなる中間層(114)が堆積され、
前記中間層(114)が導電性であり、かつ、圧縮による張力がかかっており、
前記中間層(114)は、ケイ素、酸素、またはゲルマニウムをドーパントとして含み、当該ドーパントによって設定される導電率を有し、
被張力層(104,134,160)の格子定数が基板の格子定数よりも小さく、これと同時に、さらなる層(108,136,168)の格子定数が基板の格子定数より大きい、
オプトエレクトロニクス半導体ボディ(100)。 - 前記基板(102,132,202)の格子定数からのさらなる層(108,136,168)の格子定数の逸脱が、基板(102,132,202)の格子定数からの被張力層(104,134,160)の格子定数の逸脱よりも小さい、
請求項1に記載のオプトエレクトロニクス半導体ボディ。 - 前記被張力層(104,134,160)が前記凹部(106)において薄くされている、
請求項1または2に記載のオプトエレクトロニクス半導体ボディ。 - 前記被張力層(104,134,160)が前記凹部(106)において全体的に分断されている、
請求項1から請求項3のいずれかに記載のオプトエレクトロニクス半導体ボディ。 - 前記さらなる層(108,136,168)が前記被張力層(104,134,160)を完全に覆っている、
請求項1から請求項4のいずれかに記載のオプトエレクトロニクス半導体ボディ。 - 前記被張力層(104,134,160)の厚さが、0.5μm〜5μmの範囲内である、
請求項1から請求項5のいずれかに記載のオプトエレクトロニクス半導体ボディ。 - 前記少なくとも1つの凹部(106,110)が、第1のタイプの凹部(106)もしくは第2のタイプの凹部(110)またはその両方を備えている、
請求項1から請求項6のいずれかに記載のオプトエレクトロニクス半導体ボディ。 - 前記第1のタイプの凹部(106)が5μm〜100μmの幅を有する、
請求項7に記載のオプトエレクトロニクス半導体ボディ。 - 前記第2のタイプの凹部(110)が0.1μm〜5μmの幅を有する、
請求項7に記載のオプトエレクトロニクス半導体ボディ。 - 前記さらなる層(108,136,168)が、第1の導電型を有する、
請求項1から請求項9のいずれかに記載のオプトエレクトロニクス半導体ボディ。 - 前記さらなる層(108,136,168)の上に、成長方向において以下の層が続く、
− 活性ゾーン(118)、
− 第2の導電型を有する層(120,138,162)、
請求項10に記載のオプトエレクトロニクス半導体ボディ。 - 請求項11に記載のオプトエレクトロニクス半導体ボディ(100)から個片化されたオプトエレクトロニクス部品(101)。
- オプトエレクトロニクス半導体ボディ(100)を製造する方法であって、
− GaNを含む基板(102,132,202)を形成するステップと、
− 前記基板(102,132,202)の上に、InxAlyGa1−x−yN(0≦x≦0.1、0≦y≦1)からなるシェル層(134)である被張力層(104,134,160)をエピタキシャルに堆積させるステップと、
− 前記被張力層(104,134,160)を構造化して、前記被張力層(104,134,160)に少なくとも1つの垂直凹部(106,110)を形成するステップと、
− さらなる層(108,136,168)をエピタキシャルに堆積させるステップであって、前記さらなる層(108,136,168)が、前記少なくとも1つの凹部(106,110)を満たし、少なくとも部分的に前記被張力層(104,134,160)を覆う、ステップと、
を有し、
前記InAlGaNシェル層(134)と、前記基板(132)との間に、InxGa1−xN(0≦x≦0.5)からなる中間層(114)が堆積され、
前記中間層(114)が導電性であり、かつ、圧縮による張力がかかっており、
前記中間層(114)の導電率は、ケイ素、酸素、またはゲルマニウムを使用してドープすることによって設定され、
被張力層(104,134,160)の格子定数が基板の格子定数よりも小さく、これと同時に、さらなる層(108,136,168)の格子定数が基板の格子定数より大きい、方法。 - 前記被張力層を堆積させる前に、前記中間層がエピタキシャルに堆積される、
請求項13に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011077542.0 | 2011-06-15 | ||
DE102011077542.0A DE102011077542B4 (de) | 2011-06-15 | 2011-06-15 | Optoelektronischer halbleiterkörper und verfahren zur herstellung eines optoelektronischen halbleiterkörpers |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014515113A Division JP2014517541A (ja) | 2011-06-15 | 2012-05-15 | オプトエレクトロニクス半導体ボディ、およびオプトエレクトロニクス半導体ボディの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016189486A JP2016189486A (ja) | 2016-11-04 |
JP6248148B2 true JP6248148B2 (ja) | 2017-12-13 |
Family
ID=46085965
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014515113A Pending JP2014517541A (ja) | 2011-06-15 | 2012-05-15 | オプトエレクトロニクス半導体ボディ、およびオプトエレクトロニクス半導体ボディの製造方法 |
JP2016130510A Active JP6248148B2 (ja) | 2011-06-15 | 2016-06-30 | オプトエレクトロニクス半導体ボディ、およびオプトエレクトロニクス半導体ボディの製造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014515113A Pending JP2014517541A (ja) | 2011-06-15 | 2012-05-15 | オプトエレクトロニクス半導体ボディ、およびオプトエレクトロニクス半導体ボディの製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9478945B2 (ja) |
JP (2) | JP2014517541A (ja) |
KR (1) | KR101929078B1 (ja) |
CN (2) | CN105789338B (ja) |
DE (1) | DE102011077542B4 (ja) |
TW (1) | TWI586060B (ja) |
WO (1) | WO2012171736A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014116999A1 (de) * | 2014-11-20 | 2016-05-25 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
WO2016103835A1 (ja) * | 2014-12-26 | 2016-06-30 | ソニー株式会社 | 光半導体デバイス |
DE102021124129A1 (de) | 2021-09-17 | 2023-03-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches halbleiterbauelement und optoelektronisches modul |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3830051B2 (ja) * | 1995-09-18 | 2006-10-04 | 株式会社 日立製作所 | 窒化物半導体基板の製造方法、窒化物半導体基板、光半導体装置の製造方法および光半導体装置 |
WO2000004615A1 (en) * | 1998-07-14 | 2000-01-27 | Fujitsu Limited | Semiconductor laser, semiconductor device, and method for manufacturing the same |
JP3659050B2 (ja) | 1998-12-21 | 2005-06-15 | 日亜化学工業株式会社 | 窒化物半導体の成長方法及び窒化物半導体素子 |
JP3770014B2 (ja) * | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | 窒化物半導体素子 |
JP3471700B2 (ja) * | 1999-03-17 | 2003-12-02 | 三菱電線工業株式会社 | 半導体基材 |
JP2000349393A (ja) * | 1999-03-26 | 2000-12-15 | Fuji Xerox Co Ltd | 半導体デバイス、面発光型半導体レーザ、及び端面発光型半導体レーザ |
CN1347581A (zh) | 1999-03-26 | 2002-05-01 | 松下电器产业株式会社 | 带有应变补偿层的半导体结构及其制备方法 |
JP3587081B2 (ja) * | 1999-05-10 | 2004-11-10 | 豊田合成株式会社 | Iii族窒化物半導体の製造方法及びiii族窒化物半導体発光素子 |
JP4432180B2 (ja) * | 1999-12-24 | 2010-03-17 | 豊田合成株式会社 | Iii族窒化物系化合物半導体の製造方法、iii族窒化物系化合物半導体素子及びiii族窒化物系化合物半導体 |
JP3679720B2 (ja) * | 2001-02-27 | 2005-08-03 | 三洋電機株式会社 | 窒化物系半導体素子および窒化物系半導体の形成方法 |
JP2003282447A (ja) | 2002-03-20 | 2003-10-03 | Fuji Photo Film Co Ltd | 半導体素子用基板の製造方法および半導体素子用基板ならびに半導体素子 |
JP2007180589A (ja) * | 2003-02-07 | 2007-07-12 | Sanyo Electric Co Ltd | 半導体素子およびその製造方法 |
ES2363089T3 (es) * | 2004-04-30 | 2011-07-20 | Dichroic Cell S.R.L. | Método para producir sustratos de ge virtuales para la integración iii/v sobre si (001). |
US8334155B2 (en) | 2005-09-27 | 2012-12-18 | Philips Lumileds Lighting Company Llc | Substrate for growing a III-V light emitting device |
JP2007235100A (ja) * | 2006-01-26 | 2007-09-13 | Matsushita Electric Ind Co Ltd | 窒化物半導体素子及びその製造方法 |
JP2009176908A (ja) * | 2008-01-24 | 2009-08-06 | Nec Corp | 半導体光素子およびその製造方法 |
DE102008010511B4 (de) | 2008-02-22 | 2023-08-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung |
US7856040B2 (en) | 2008-09-24 | 2010-12-21 | Palo Alto Research Center Incorporated | Semiconductor light emitting devices with non-epitaxial upper cladding |
EP2466626A3 (en) * | 2009-02-19 | 2012-07-04 | Soitec | Relaxation and transfer of strained material layers |
-
2011
- 2011-06-15 DE DE102011077542.0A patent/DE102011077542B4/de active Active
-
2012
- 2012-05-15 CN CN201610233077.2A patent/CN105789338B/zh active Active
- 2012-05-15 JP JP2014515113A patent/JP2014517541A/ja active Pending
- 2012-05-15 WO PCT/EP2012/058969 patent/WO2012171736A1/de active Application Filing
- 2012-05-15 KR KR1020147000225A patent/KR101929078B1/ko active IP Right Grant
- 2012-05-15 CN CN201280029480.3A patent/CN103620736B/zh active Active
- 2012-05-15 US US14/126,047 patent/US9478945B2/en active Active
- 2012-06-13 TW TW101121027A patent/TWI586060B/zh active
-
2016
- 2016-06-30 JP JP2016130510A patent/JP6248148B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
CN103620736A (zh) | 2014-03-05 |
US20140138703A1 (en) | 2014-05-22 |
CN103620736B (zh) | 2016-05-11 |
CN105789338B (zh) | 2017-09-01 |
WO2012171736A1 (de) | 2012-12-20 |
DE102011077542A1 (de) | 2012-12-20 |
KR20140048192A (ko) | 2014-04-23 |
CN105789338A (zh) | 2016-07-20 |
TWI586060B (zh) | 2017-06-01 |
US9478945B2 (en) | 2016-10-25 |
KR101929078B1 (ko) | 2018-12-13 |
JP2014517541A (ja) | 2014-07-17 |
TW201304334A (zh) | 2013-01-16 |
DE102011077542B4 (de) | 2020-06-18 |
JP2016189486A (ja) | 2016-11-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10847675B2 (en) | Micron-sized light emiting diode designs | |
US20100246624A1 (en) | Nitride-based semiconductor light-emitting device, nitride-based semiconductor laser device, nitride-based semiconductor light-emitting diode, method of manufacturing the same, and method of forming nitride-based semiconductor layer | |
US11336078B2 (en) | Semiconductor laser diode | |
US8270451B2 (en) | Edge emitting semiconductor laser having a phase structure | |
US20100265981A1 (en) | Nitride-based semiconductor light-emitting diode, nitride-based semiconductor laser device, method of manufacturing the same, and method of forming nitride-based semiconductor layer | |
US20110051771A1 (en) | Optoelectronic Component and Method for Producing an Optoelectronic Component | |
WO2013169796A1 (en) | Lasers with beam-shape modification | |
JP2009117662A (ja) | 窒化物系半導体発光素子およびその製造方法 | |
JP6248148B2 (ja) | オプトエレクトロニクス半導体ボディ、およびオプトエレクトロニクス半導体ボディの製造方法 | |
WO2006030845A1 (ja) | Iii族窒化物半導体光素子 | |
JP2011228570A (ja) | 半導体レーザ及びその製造方法 | |
US8569088B2 (en) | Semiconductor light-emitting element and manufacturing method thereof | |
JP4928811B2 (ja) | 窒化物系半導体発光素子の製造方法および窒化物系半導体発光素子 | |
US20080049801A1 (en) | Edge-emitting semiconductor laser chip | |
WO2006106928A1 (ja) | 窒化ガリウム系化合物半導体レーザ素子の製造方法及び窒化ガリウム系化合物半導体レーザ素子 | |
JP2005191306A (ja) | 窒化物半導体積層基板およびそれを用いた窒化物半導体デバイス、窒化物半導体レーザ素子 | |
JP4960777B2 (ja) | 端面発光型半導体レーザチップ | |
KR20050034970A (ko) | 수직 공진기형 발광소자 및 제조방법 | |
JP2006012899A (ja) | 半導体レーザ素子および半導体レーザ素子の製造方法 | |
JP2009170496A (ja) | 窒化物系半導体レーザ素子およびその製造方法 | |
EP2438663B1 (en) | Laser diode and method of fabrication the laser diode | |
JP2003060314A (ja) | 窒化物半導体素子 | |
JP2010129581A (ja) | 窒化物系半導体レーザ素子及びその作製方法 | |
JP2011018702A (ja) | 多波長半導体レーザ及びその製造方法 | |
JP2011018701A (ja) | 多波長半導体レーザ及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170328 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170612 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20171107 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20171120 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6248148 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |