JP6239923B2 - ケミカルメカニカルポリッシング組成物及び方法 - Google Patents
ケミカルメカニカルポリッシング組成物及び方法 Download PDFInfo
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- JP6239923B2 JP6239923B2 JP2013211007A JP2013211007A JP6239923B2 JP 6239923 B2 JP6239923 B2 JP 6239923B2 JP 2013211007 A JP2013211007 A JP 2013211007A JP 2013211007 A JP2013211007 A JP 2013211007A JP 6239923 B2 JP6239923 B2 JP 6239923B2
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- 239000000126 substance Substances 0.000 title claims description 98
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- 238000000034 method Methods 0.000 title claims description 36
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- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 36
- -1 ammonium halide Chemical class 0.000 claims description 33
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 33
- 239000003795 chemical substances by application Substances 0.000 claims description 28
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- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 20
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 20
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- QUCDWLYKDRVKMI-UHFFFAOYSA-M sodium;3,4-dimethylbenzenesulfonate Chemical compound [Na+].CC1=CC=C(S([O-])(=O)=O)C=C1C QUCDWLYKDRVKMI-UHFFFAOYSA-M 0.000 claims description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 18
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- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 11
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- NNRAOBUKHNZQFX-UHFFFAOYSA-N 2H-benzotriazole-4-thiol Chemical compound SC1=CC=CC2=C1NN=N2 NNRAOBUKHNZQFX-UHFFFAOYSA-N 0.000 claims description 10
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- SRSXLGNVWSONIS-UHFFFAOYSA-M benzenesulfonate Chemical compound [O-]S(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-M 0.000 claims description 6
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- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Chemical class [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 claims description 3
- 150000001868 cobalt Chemical class 0.000 claims description 3
- 150000001879 copper Chemical class 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical class Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 claims description 3
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 claims description 3
- 159000000014 iron salts Chemical class 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 150000002823 nitrates Chemical class 0.000 claims description 3
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical class OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 claims description 3
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- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 3
- 150000003378 silver Chemical class 0.000 claims description 3
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 15
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- ATOUXIOKEJWULN-UHFFFAOYSA-N 1,6-diisocyanato-2,2,4-trimethylhexane Chemical compound O=C=NCCC(C)CC(C)(C)CN=C=O ATOUXIOKEJWULN-UHFFFAOYSA-N 0.000 description 1
- QGLRLXLDMZCFBP-UHFFFAOYSA-N 1,6-diisocyanato-2,4,4-trimethylhexane Chemical compound O=C=NCC(C)CC(C)(C)CCN=C=O QGLRLXLDMZCFBP-UHFFFAOYSA-N 0.000 description 1
- RNQBCZCPNUHWLV-UHFFFAOYSA-N 1,8-dioxacyclotetradecane-2,7-dione Chemical compound O=C1CCCCC(=O)OCCCCCCO1 RNQBCZCPNUHWLV-UHFFFAOYSA-N 0.000 description 1
- PVXVWWANJIWJOO-UHFFFAOYSA-N 1-(1,3-benzodioxol-5-yl)-N-ethylpropan-2-amine Chemical compound CCNC(C)CC1=CC=C2OCOC2=C1 PVXVWWANJIWJOO-UHFFFAOYSA-N 0.000 description 1
- HGXVKAPCSIXGAK-UHFFFAOYSA-N 2,4-diethyl-6-methylbenzene-1,3-diamine;4,6-diethyl-2-methylbenzene-1,3-diamine Chemical compound CCC1=CC(CC)=C(N)C(C)=C1N.CCC1=CC(C)=C(N)C(CC)=C1N HGXVKAPCSIXGAK-UHFFFAOYSA-N 0.000 description 1
- VQTAPEISMWLANM-UHFFFAOYSA-N 2-[2-[3-[2-(2-hydroxyethoxy)ethoxy]phenoxy]ethoxy]ethanol Chemical compound OCCOCCOC1=CC=CC(OCCOCCO)=C1 VQTAPEISMWLANM-UHFFFAOYSA-N 0.000 description 1
- WTPYFJNYAMXZJG-UHFFFAOYSA-N 2-[4-(2-hydroxyethoxy)phenoxy]ethanol Chemical compound OCCOC1=CC=C(OCCO)C=C1 WTPYFJNYAMXZJG-UHFFFAOYSA-N 0.000 description 1
- 229940100555 2-methyl-4-isothiazolin-3-one Drugs 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- RQEOBXYYEPMCPJ-UHFFFAOYSA-N 4,6-diethyl-2-methylbenzene-1,3-diamine Chemical compound CCC1=CC(CC)=C(N)C(C)=C1N RQEOBXYYEPMCPJ-UHFFFAOYSA-N 0.000 description 1
- PPUHQXZSLCCTAN-UHFFFAOYSA-N 4-[(4-amino-2,3-dichlorophenyl)methyl]-2,3-dichloroaniline Chemical compound ClC1=C(Cl)C(N)=CC=C1CC1=CC=C(N)C(Cl)=C1Cl PPUHQXZSLCCTAN-UHFFFAOYSA-N 0.000 description 1
- VIOMIGLBMQVNLY-UHFFFAOYSA-N 4-[(4-amino-2-chloro-3,5-diethylphenyl)methyl]-3-chloro-2,6-diethylaniline Chemical compound CCC1=C(N)C(CC)=CC(CC=2C(=C(CC)C(N)=C(CC)C=2)Cl)=C1Cl VIOMIGLBMQVNLY-UHFFFAOYSA-N 0.000 description 1
- NWIVYGKSHSJHEF-UHFFFAOYSA-N 4-[(4-amino-3,5-diethylphenyl)methyl]-2,6-diethylaniline Chemical compound CCC1=C(N)C(CC)=CC(CC=2C=C(CC)C(N)=C(CC)C=2)=C1 NWIVYGKSHSJHEF-UHFFFAOYSA-N 0.000 description 1
- 229940100484 5-chloro-2-methyl-4-isothiazolin-3-one Drugs 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 1
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 1
- 229920002121 Hydroxyl-terminated polybutadiene Polymers 0.000 description 1
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000005058 Isophorone diisocyanate Substances 0.000 description 1
- QMMZSJPSPRTHGB-UHFFFAOYSA-N MDEA Natural products CC(C)CCCCC=CCC=CC(O)=O QMMZSJPSPRTHGB-UHFFFAOYSA-N 0.000 description 1
- 241001112258 Moca Species 0.000 description 1
- KYIMHWNKQXQBDG-UHFFFAOYSA-N N=C=O.N=C=O.CCCCCC Chemical compound N=C=O.N=C=O.CCCCCC KYIMHWNKQXQBDG-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 229920002396 Polyurea Polymers 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical compound ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- ZZXDRXVIRVJQBT-UHFFFAOYSA-M Xylenesulfonate Chemical compound CC1=CC=CC(S([O-])(=O)=O)=C1C ZZXDRXVIRVJQBT-UHFFFAOYSA-M 0.000 description 1
- KXBFLNPZHXDQLV-UHFFFAOYSA-N [cyclohexyl(diisocyanato)methyl]cyclohexane Chemical compound C1CCCCC1C(N=C=O)(N=C=O)C1CCCCC1 KXBFLNPZHXDQLV-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- DHNRXBZYEKSXIM-UHFFFAOYSA-N chloromethylisothiazolinone Chemical compound CN1SC(Cl)=CC1=O DHNRXBZYEKSXIM-UHFFFAOYSA-N 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- KORSJDCBLAPZEQ-UHFFFAOYSA-N dicyclohexylmethane-4,4'-diisocyanate Chemical group C1CC(N=C=O)CCC1CC1CCC(N=C=O)CC1 KORSJDCBLAPZEQ-UHFFFAOYSA-N 0.000 description 1
- KIQKWYUGPPFMBV-UHFFFAOYSA-N diisocyanatomethane Chemical compound O=C=NCN=C=O KIQKWYUGPPFMBV-UHFFFAOYSA-N 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- RESSOZOGQXKCKT-UHFFFAOYSA-N ethene;propane-1,2-diol Chemical compound C=C.CC(O)CO RESSOZOGQXKCKT-UHFFFAOYSA-N 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 1
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 1
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002480 mineral oil Substances 0.000 description 1
- 235000010446 mineral oil Nutrition 0.000 description 1
- FSWDLYNGJBGFJH-UHFFFAOYSA-N n,n'-di-2-butyl-1,4-phenylenediamine Chemical compound CCC(C)NC1=CC=C(NC(C)CC)C=C1 FSWDLYNGJBGFJH-UHFFFAOYSA-N 0.000 description 1
- YZZTZUHVGICSCS-UHFFFAOYSA-N n-butan-2-yl-4-[[4-(butan-2-ylamino)phenyl]methyl]aniline Chemical compound C1=CC(NC(C)CC)=CC=C1CC1=CC=C(NC(C)CC)C=C1 YZZTZUHVGICSCS-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- JPMIIZHYYWMHDT-UHFFFAOYSA-N octhilinone Chemical compound CCCCCCCCN1SC=CC1=O JPMIIZHYYWMHDT-UHFFFAOYSA-N 0.000 description 1
- 239000001814 pectin Substances 0.000 description 1
- 229920001277 pectin Polymers 0.000 description 1
- 235000010987 pectin Nutrition 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920000582 polyisocyanurate Polymers 0.000 description 1
- 239000011495 polyisocyanurate Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920003226 polyurethane urea Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 1
- 229920000131 polyvinylidene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229940048842 sodium xylenesulfonate Drugs 0.000 description 1
- KVCGISUBCHHTDD-UHFFFAOYSA-M sodium;4-methylbenzenesulfonate Chemical compound [Na+].CC1=CC=C(S([O-])(=O)=O)C=C1 KVCGISUBCHHTDD-UHFFFAOYSA-M 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- CBDKQYKMCICBOF-UHFFFAOYSA-N thiazoline Chemical class C1CN=CS1 CBDKQYKMCICBOF-UHFFFAOYSA-N 0.000 description 1
- 150000004072 triols Chemical class 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229940071104 xylenesulfonate Drugs 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
H3C−(CH2)7−SO3Na
で示される);20〜30重量%のコロイド状シリカ砥粒(ここで、コロイド状シリカは、≦100nmの平均粒径を有する);0.1〜0.5重量%の酸化剤(ここで、酸化剤は、H2O2である);0.008〜0.03重量%のポリビニルアルキルエーテル;及び0.001〜0.009重量%の殺生物剤(ここで、殺生物剤は、チアゾリン誘導体である)からなる、ケミカルメカニカルポリッシング組成物(ここで、ケミカルメカニカルポリッシング組成物は、8〜12の研磨pH用に設計されており、そしてケミカルメカニカルポリッシング組成物は、安定な製造用low−k材料除去速度を示す)を提供する。
H3C−(CH2)7−SO3Na
で示される);20〜30重量%のコロイド状シリカ砥粒(ここで、コロイド状シリカは、≦100nmの平均粒径を有する);0.1〜0.5重量%の酸化剤(ここで、酸化剤は、H2O2である);0.008〜0.03重量%のポリビニルアルキルエーテル;及び0.001〜0.009重量%の殺生物剤(ここで、殺生物剤は、チアゾリン誘導体である);及びpH調整剤からなる]を準備すること(ここで、ケミカルメカニカルポリッシング組成物は、8〜12のpHを有する);ケミカルメカニカルポリッシングパッドと少なくとも150個の別々の半導体ウェーハ基板のそれぞれとの界面に連続して動的接触を作り出すこと;及びケミカルメカニカルポリッシング組成物をケミカルメカニカルポリッシングパッドと少なくとも150個の別々の半導体ウェーハ基板のそれぞれとの界面に又はその近くのケミカルメカニカルポリッシングパッド上に分注することにより、少なくとも150個の別々の半導体ウェーハ基板のそれぞれの研磨される表面の研磨を容易にして、少なくとも150個の研磨ウェーハを準備することを含む方法を提供するが;ここで、少なくとも幾らかのlow−k材料が、少なくとも150個の別々の半導体ウェーハ基板のそれぞれの研磨される表面から除去されることにより、少なくとも150個の研磨ウェーハを準備し;ここで、low−k材料が少なくとも150個の別々の半導体ウェーハ基板のそれぞれの研磨される表面から除去され、少なくとも150個の研磨ウェーハを準備する速度は、少なくとも150個の研磨ウェーハのそれぞれのlow−k材料除去速度を画定しており;ここで、少なくとも150個の研磨ウェーハのlow−k材料除去速度は、少なくとも150個の研磨ウェーハ中最初に研磨されたウェーハから少なくとも150個の研磨ウェーハ中それぞれ続いて研磨されたウェーハへと、そのlow−k材料除去速度が、少なくとも150個の研磨ウェーハ中の直前に研磨されたウェーハに対するlow−k材料除去速度より高くなる、少なくとも150個の研磨ウェーハ中の転移点研磨ウェーハに至るまで、初期にはその大きさが低下し;ここで、転移点研磨ウェーハは、少なくとも150個の研磨ウェーハ中の100番目の研磨ウェーハが研磨されるより前に研磨され;そしてここで、少なくとも150個の研磨ウェーハに対するlow−k材料除去速度は、少なくとも150個の研磨ウェーハ中の110番目の研磨ウェーハの研磨される表面の研磨後に安定を保つ。
典型的には、ウェーハ製造業者は、1,000Å/分未満(実施例に明記される条件下で測定するとき)のlow−k材料除去速度を示すバリア研磨スラリー配合物を使用することを好む。所定の工程2のCMPプロセスに関する他の除去速度要件を満たすバリア研磨スラリー配合物はまた、不適切に高いlow−k材料除去速度を示す。工程2のCMPプロセス中に存在する他の層(例えば、TEOS)の除去速度に影響を及ぼさずに望まれるlow−k材料除去速度を達成する1つの方法は、ポリビニルアルキルエーテルをバリア研磨スラリー中に組み込むことであることが示唆されている。残念なことに、所定のバリア研磨スラリーへのポリビニルアルキルエーテルの単純な添加では、不安定なlow−k材料除去速度を示す研磨配合物が得られる。具体的には、low−k材料除去速度は、研磨につれて減少するため、研磨された各一連のウェーハのlow−k材料除去速度は、それ以前に研磨されたウェーハのlow−k材料除去速度よりも低い。
H3C−(CH2)7−SO3Na
で示される。
[式中、R1、R2、R3及びR4は、基であり;そしてR1は、2〜25個の炭素原子の炭素鎖を有する]を含む化合物により形成される<0.01ppmの有機アンモニウムカチオン性塩を含有する。このような有機アンモニウムカチオン性塩は、炭素ドープ酸化物の除去速度を上昇させることが知られている。炭素ドープ酸化物の除去速度を上昇させるであろう有機アンモニウムカチオン性塩のような化合物の、本発明のケミカルメカニカルポリッシングへの添加は、回避すべきである。
ケミカルメカニカルポリッシング組成物の調製
比較研磨実施例PC1〜PC3及び研磨実施例1に使用されたケミカルメカニカルポリッシング組成物(即ち、それぞれケミカルメカニカルポリッシング組成物C1〜C3及び1)は、表1にリストされる量の成分を合わせて残りを脱イオン水とし、水酸化カリウムにより表1にリストされる最終pHまで組成物のpHを調整することによって調製した。
ケミカルメカニカルポリッシング実験
Coral(登録商標)ブランケットウェーハ除去速度研磨試験を、比較例C1〜C3及び実施例1により調製したケミカルメカニカルポリッシング組成物を使用して実施した。具体的には、Coral(登録商標)ブランケットウェーハを10番目、25番目、50番目、75番目、100番目などのウェーハとして混ぜ入れて、複数のダミーウェーハを準備した。次にこれらのウェーハを連続して研磨して、表1に特定されるケミカルメカニカルポリッシングC1〜C3及び1のそれぞれについてCoral(登録商標)の除去速度を測定した。ISRM検出器システムを取り付けたApplied Materials, Inc.のReflexion 300mm研磨機[1.5psi(10.3kPa)のダウンフォース、350cc/分の研磨液流量、93RPMのプラテン速度、及び87RPMのキャリア速度下で、1010+A24溝模様を持つVisionPad(商標)3100ポリウレタン研磨パッド(Rohm and Haas Electronic Materials CMP Inc.から市販されている)を用いる]。Diagrid(登録商標)AD3BS-211250-3FNダイヤモンドパッドコンディショナー(Kinik Companyから市販されている)を使用して、ウェーハ間の研磨パッドを調整した。Coral(登録商標)除去速度は、KLA Tencor ASET F5X計量ツールを用いて測定した。連番が付いたウェーハに関する除去速度実験の結果は、表2に提供される。
Claims (10)
- ケミカルメカニカルポリッシング組成物であって、初期成分として、本質的に:
水;
ベンゾトリアゾール(BTA)、メルカプトベンゾトリアゾール(MBT)、トリルトリアゾール(TTA)、イミダゾール及びこれらの組合せよりなる群から選択される、0.01〜0.5重量%のアゾールインヒビター;
クエン酸、乳酸、リンゴ酸、マレイン酸、マロン酸、シュウ酸、酒石酸及びグルコン酸よりなる群から選択される、0.01〜0.5重量%の錯化剤;
塩化アンモニウム、臭化アンモニウム及びフッ化アンモニウムよりなる群から選択される、0〜1.0重量%のハロゲン化アンモニウム;
リン酸である、0.01〜1重量%のリン含有剤;
ベンゼンスルホナート、C1−4アルキルベンゼンスルホナート、ジ−C1−4アルキルベンゼンスルホナート、C5−10アルカンスルホナート及びこれらの塩よりなる群から選択される、0.05〜1.0重量%のヒドロトロープ;
0.1〜40重量%のコロイド状シリカ砥粒;
0〜5.0重量%の酸化剤;
0.005〜1.0重量%のポリビニルアルキルエーテル;
チアゾリン誘導体である、0〜0.01重量%の殺生物剤;及び
pH調整剤
よりなり、
8〜12の研磨pH用に設計されており、そして
安定な製造用low−k材料除去速度を示す、ケミカルメカニカルポリッシング組成物。 - コロイド状シリカ砥粒が、≦100nmの平均粒径を有しており;そして
酸化剤が、過酸化水素(H2O2)、一過硫酸塩、ヨウ素酸塩、過フタル酸マグネシウム、過酢酸及び他の過酸、過硫酸塩、臭素酸塩、過ヨウ素酸塩、硝酸塩、鉄塩、セリウム塩、Mn(III)、Mn(IV)及びMn(VI)塩、銀塩、銅塩、クロム塩、コバルト塩、ハロゲン、次亜塩素酸塩並びにこれらの混合物から選択される
請求項1に記載のケミカルメカニカルポリッシング組成物。 - ケミカルメカニカルポリッシング組成物が、初期成分として、本質的に:
0.01〜1.0重量%のハロゲン化アンモニウム;及び
0.0001〜0.01重量%の殺生物剤
よりなる、請求項2に記載のケミカルメカニカルポリッシング組成物。 - ケミカルメカニカルポリッシング組成物が、初期成分として、本質的に:
水;
0.02〜0.04重量%のアゾールインヒビター;
0.1〜0.4重量%の錯化剤;
0.1〜0.3重量%のハロゲン化アンモニウム;
0.05〜0.1重量%のリン含有剤;
0.3〜0.8重量%のヒドロトロープ;
20〜30重量%のコロイド状シリカ砥粒;
0.1〜0.5重量%の酸化剤;
0.008〜0.03重量%のポリビニルアルキルエーテル;及び
0.001〜0.009重量%の殺生物剤
よりなる、請求項3に記載のケミカルメカニカルポリッシング組成物。 - ケミカルメカニカルポリッシング組成物が、初期成分として、本質的に:
水;
ベンゾトリアゾールである、0.02〜0.04重量%のアゾールインヒビター;
クエン酸である、0.1〜0.4重量%の錯化剤;
塩化アンモニウムである、0.1〜0.3重量%のハロゲン化アンモニウム;
リン酸である、0.05〜0.1重量%のリン含有剤;
下記式:
H3C−(CH2)7−SO3Na
で示される、0.3〜0.8重量%のヒドロトロープ;
≦100nmの平均粒径を有する、20〜30重量%のコロイド状シリカ砥粒;
H2O2である、0.1〜0.5重量%の酸化剤;
0.008〜0.03重量%のポリビニルアルキルエーテル;及び
0.001〜0.009重量%の殺生物剤
よりなる、請求項3に記載のケミカルメカニカルポリッシング組成物。 - 複数の基板のケミカルメカニカルポリッシングのための方法であって、
low−k材料を含む研磨すべき表面を有する少なくとも150個の別々の半導体ウェーハ基板を提供すること;
ポリウレタンを含むケミカルメカニカルポリッシングパッドを提供すること;
初期成分として、本質的に:
水;
ベンゾトリアゾール(BTA)、メルカプトベンゾトリアゾール(MBT)、トリルトリアゾール(TTA)、イミダゾール及びこれらの組合せよりなる群から選択される、0.01〜0.5重量%のアゾールインヒビター;
クエン酸、乳酸、リンゴ酸、マレイン酸、マロン酸、シュウ酸、酒石酸及びグルコン酸よりなる群から選択される、0.01〜0.5重量%の錯化剤;
塩化アンモニウム、臭化アンモニウム及びフッ化アンモニウムよりなる群から選択される、0〜1.0重量%のハロゲン化アンモニウム;
リン酸である、0.01〜1重量%のリン含有剤;
ベンゼンスルホナート、C1−4アルキルベンゼンスルホナート、ジ−C1−4アルキルベンゼンスルホナート、C5−10アルカンスルホナート及びこれらの塩よりなる群から選択される、0.05〜1.0重量%のヒドロトロープ;
0.1〜40重量%のコロイド状シリカ砥粒;
0〜5.0重量%の酸化剤;
0.005〜1.0重量%のポリビニルアルキルエーテル;
チアゾリン誘導体である、0〜0.01重量%の殺生物剤;及び
pH調整剤よりなり、8〜12のpHを有する、ケミカルメカニカルポリッシング組成物を提供すること;
ケミカルメカニカルポリッシングパッドと少なくとも150個の別々の半導体ウェーハ基板のそれぞれとの界面に連続して動的接触を作り出すこと;及び
ケミカルメカニカルポリッシング組成物をケミカルメカニカルポリッシングパッド上のケミカルメカニカルポリッシングパッドと少なくとも150個の別々の半導体ウェーハ基板のそれぞれとの界面に又はその近くに分配することにより、少なくとも150個の別々の半導体ウェーハ基板のそれぞれの研磨すべき表面の研磨の達成を容易にして、少なくとも150個の研磨ウェーハを提供すること
を含み、
少なくとも幾らかのlow−k材料は、少なくとも150個の別々の半導体ウェーハ基板のそれぞれの研磨すべき表面から除去されることにより、少なくとも150個の研磨ウェーハを提供し;
少なくとも150個の研磨ウェーハを提供するためにlow−k材料が少なくとも150個の別々の半導体ウェーハ基板のそれぞれの研磨すべき表面から除去される速度は、少なくとも150個の研磨ウェーハのそれぞれのlow−k材料除去速度を画定しており;
少なくとも150個の研磨ウェーハのlow−k材料除去速度は、少なくとも150個の研磨ウェーハ中最初に研磨されたウェーハから少なくとも150個の研磨ウェーハ中それぞれ続いて研磨されたウェーハへと、関連するlow−k材料除去速度が、少なくとも150個の研磨ウェーハ中の直前に研磨されたウェーハの関連するlow−k材料除去速度より高い、少なくとも150個の研磨ウェーハ中の転移点研磨ウェーハに至るまで、初期には大きさが低下し;
転移点研磨ウェーハは、少なくとも150個の研磨ウェーハ中の100番目の研磨ウェーハが研磨されるより前に研磨され;そして
少なくとも150個の研磨ウェーハに関連するlow−k材料除去速度は、少なくとも150個の研磨ウェーハ中の110番目の研磨ウェーハの研磨すべき表面の研磨後に安定を保つ、方法。 - コロイド状シリカ砥粒が、≦100nmの平均粒径を有しており;そして
酸化剤が、過酸化水素(H2O2)、一過硫酸塩、ヨウ素酸塩、過フタル酸マグネシウム、過酢酸及び他の過酸、過硫酸塩、臭素酸塩、過ヨウ素酸塩、硝酸塩、鉄塩、セリウム塩、Mn(III)、Mn(IV)及びMn(VI)塩、銀塩、銅塩、クロム塩、コバルト塩、ハロゲン、次亜塩素酸塩並びにこれらの混合物から選択される
請求項6に記載の方法。 - 与えられるケミカルメカニカルポリッシング組成物が、初期成分として、本質的に:
0.01〜1.0重量%のハロゲン化アンモニウム;及び
0.0001〜0.01重量%の殺生物剤
よりなる、請求項7に記載の方法。 - 与えられるケミカルメカニカルポリッシング組成物が、初期成分として、本質的に:
水;
0.02〜0.04重量%のアゾールインヒビター;
0.1〜0.4重量%の錯化剤;
0.1〜0.3重量%のハロゲン化アンモニウム;
0.05〜0.1重量%のリン含有剤;
0.3〜0.8重量%のヒドロトロープ;
20〜30重量%のコロイド状シリカ砥粒;
0.1〜0.5重量%の酸化剤;
0.008〜0.03重量%のポリビニルアルキルエーテル;及び
0.001〜0.009重量%の殺生物剤
よりなる、請求項8に記載の方法。 - 与えられるケミカルメカニカルポリッシング組成物が、初期成分として、本質的に:
水;
ベンゾトリアゾールである、0.02〜0.04重量%のアゾールインヒビター;
クエン酸である、0.1〜0.4重量%の錯化剤;
塩化アンモニウムである、0.1〜0.3重量%のハロゲン化アンモニウム;
リン酸である、0.05〜0.1重量%のリン含有剤;
下記式:
H3C−(CH2)7−SO3Na
で示される、0.3〜0.8重量%のヒドロトロープ;
≦100nmの平均粒径を有する、20〜30重量%のコロイド状シリカ砥粒;
H2O2である、0.1〜0.5重量%の酸化剤;
0.008〜0.03重量%のポリビニルアルキルエーテル;及び
0.001〜0.009重量%の殺生物剤
よりなる、請求項7に記載の方法。
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CN103773248A (zh) | 2014-05-07 |
KR20140045891A (ko) | 2014-04-17 |
TW201435069A (zh) | 2014-09-16 |
JP2014095072A (ja) | 2014-05-22 |
KR102125229B1 (ko) | 2020-06-22 |
FR2996558A1 (fr) | 2014-04-11 |
TWI609074B (zh) | 2017-12-21 |
US8545715B1 (en) | 2013-10-01 |
DE102013016780A1 (de) | 2014-04-10 |
DE102013016780B4 (de) | 2023-03-30 |
CN103773248B (zh) | 2015-08-12 |
FR2996558B1 (fr) | 2017-06-23 |
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